PROCEEDINGS VOLUME 3279
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
Light-Emitting Diodes: Research, Manufacturing, and Applications II
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
III-V Nitride Light-Emitting Diodes
Proc. SPIE 3279, Fabrication and characterization of GaN-based blue light-emitting diodes, 0000 (7 April 1998); doi: 10.1117/12.304416
Proc. SPIE 3279, InGaN/GaN double-heterostructure LEDs on HVPE GaN-on-sapphire substrates, 0000 (7 April 1998); doi: 10.1117/12.304424
Proc. SPIE 3279, Life tests and failure mechanisms of GaN/AlGaN/InGaN light-emitting diodes, 0000 (7 April 1998); doi: 10.1117/12.304426
Proc. SPIE 3279, GaN-based LEDs grown by molecular beam epitaxy, 0000 (7 April 1998); doi: 10.1117/12.304427
III-V Nitrides and Related Materials
Polymer LEDs
Proc. SPIE 3279, Polymer light-emitting logos processed by ink-jet printing technology, 0000 (7 April 1998); doi: 10.1117/12.304412
Proc. SPIE 3279, Small-molecule organic light-emitting devices in flat panel display applications, 0000 (7 April 1998); doi: 10.1117/12.304413
Novel Structures and Materials
Proc. SPIE 3279, Systematic photoluminescence and electroluminescence study of high-efficiency surface-textured thin-film light-emitting structures, 0000 (7 April 1998); doi: 10.1117/12.304414
Proc. SPIE 3279, 4- to 10-um positive and negative luminescent diodes, 0000 (7 April 1998); doi: 10.1117/12.304415
Proc. SPIE 3279, LEDs on diamond, 0000 (7 April 1998); doi: 10.1117/12.304417
Sensing Applications of LEDs
Proc. SPIE 3279, Development of InAsSb-based light-emitting diodes for chemical sensing systems, 0000 (7 April 1998); doi: 10.1117/12.304418
Long-Wavelength LEDs and Communication
Proc. SPIE 3279, Erbium-doped silicon light-emitting devices, 0000 (7 April 1998); doi: 10.1117/12.304419
Proc. SPIE 3279, 155-Mb/s and 622-Mb/s transmission through plastic optical fiber and measurement of modal noise, 0000 (7 April 1998); doi: 10.1117/12.304420
Poster Session
Proc. SPIE 3279, Sensing applications of diffractive optics with broadband illumination, 0000 (7 April 1998); doi: 10.1117/12.304421
Long-Wavelength LEDs and Communication
Proc. SPIE 3279, MOCVD growth and characterization of 100-mm diameter (Ga1-xAlx)0.5In0.5P/GaAs epitaxial materials for LED applications, 0000 (7 April 1998); doi: 10.1117/12.304422
Proc. SPIE 3279, Monolithic hemispherical microlenses fabricated by selective oxidation of AlGaAs, 0000 (7 April 1998); doi: 10.1117/12.304423
Proc. SPIE 3279, Recent advances in In(As,Sb) SLS and QW LEDs for the 3- to 10-um region, 0000 (7 April 1998); doi: 10.1117/12.304425
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