Progress in II-VI and III-N Materials for Semiconductor Lasers
Proc. SPIE 3283, Growth and doping of cubic GaN films for optoelectronic devices, 0000 (7 July 1998); doi: 10.1117/12.316639
Proc. SPIE 3283, Beryllium-containing II-VI semiconductor devices, 0000 (7 July 1998); doi: 10.1117/12.316665
Proc. SPIE 3283, ZnSe-based light emitters grown on wide-gap III-V buffer layers, 0000 (7 July 1998); doi: 10.1117/12.316674
Defects, Doping, and Degradation in Wide-Bandgap Semiconductors
Proc. SPIE 3283, Defects, doping, and interfaces in III-V nitrides, 0000 (7 July 1998); doi: 10.1117/12.316693
Proc. SPIE 3283, Deep defect center characteristics of wide-bandgap II-VI and III-V blue laser materials, 0000 (7 July 1998); doi: 10.1117/12.316704
Proc. SPIE 3283, Degradation physics of II-VI blue-green laser diodes and LEDs, 0000 (7 July 1998); doi: 10.1117/12.316715
Proc. SPIE 3283, Heavy p-type doping of ZnSe-based II-VI semiconductors using an excimer laser, 0000 (7 July 1998); doi: 10.1117/12.316725
Optical Gain and Many-Body Effects
Proc. SPIE 3283, Effect of carrier dynamics on quantum-dot laser performance and the possibility of bi-exciton lasing, 0000 (7 July 1998); doi: 10.1117/12.316640
Proc. SPIE 3283, Many-body effects in the gain spectra of GaN/AlGaN quantum wells with localized states, 0000 (7 July 1998); doi: 10.1117/12.316650
Proc. SPIE 3283, Gain dynamics of semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316658
Proc. SPIE 3283, Non-Markovian gain of strained-layer quantum well lasers with many-body effects, 0000 (7 July 1998); doi: 10.1117/12.316659
Proc. SPIE 3283, Microscopic theory for the optical properties of Coulomb-correlated semiconductors, 0000 (7 July 1998); doi: 10.1117/12.316660
High-Power Lasers and Amplifiers
Proc. SPIE 3283, Beam filamentation and its control in high-power semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316661
Proc. SPIE 3283, Optimal refractive index changes for cross-gain and cross-phase modulation, 0000 (7 July 1998); doi: 10.1117/12.316662
Wednesday--Poster Session
Proc. SPIE 3283, Numerical simulation of flared planar semiconductor optical amplifier taking into account thermal effects, 0000 (7 July 1998); doi: 10.1117/12.316663
Quantum Well Physics and Simulation
Proc. SPIE 3283, Quantum well intermixing: materials modeling and device physics, 0000 (7 July 1998); doi: 10.1117/12.316664
Proc. SPIE 3283, Bandgap renormalization: GaAs/AlGaAs quantum wells, 0000 (7 July 1998); doi: 10.1117/12.316668
Proc. SPIE 3283, Three-cation intermixed InGaAs/InAlAs quantum well structures and their optical gain properties, 0000 (7 July 1998); doi: 10.1117/12.316669
Comprehensive Simulation of Semiconductor Lasers
Proc. SPIE 3283, Monte Carlo simulations in optical devices: some successes and some problems, 0000 (7 July 1998); doi: 10.1117/12.316670
Proc. SPIE 3283, Role of nonequilibrium carrier distributions in multiple quantum well InGaAsP-based lasers, 0000 (7 July 1998); doi: 10.1117/12.316671
Proc. SPIE 3283, Thermal crosstalk in arrays of proton-implanted top-surface-emitting lasers, 0000 (7 July 1998); doi: 10.1117/12.316672
Proc. SPIE 3283, Stable and fast simulation of semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316673
Modal Properties of Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3283, Cavity length effect on lasing mode of a dielectrically apertured Fabry-Perot microcavity, 0000 (7 July 1998); doi: 10.1117/12.316675
Proc. SPIE 3283, Theoretical analysis of polarization properties of VCSEL eigenmodes, 0000 (7 July 1998); doi: 10.1117/12.316676
Proc. SPIE 3283, Polarization dynamics of birefringent index-guided vertical-cavity surface-emitting lasers, 0000 (7 July 1998); doi: 10.1117/12.316677
Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3283, Quantum-dot active regions for extended-wavelength-range GaAs-based light-emitting devices, 0000 (7 July 1998); doi: 10.1117/12.316678
Proc. SPIE 3283, Surface-emitting lasers: issues and progress for optical information processing applications, 0000 (7 July 1998); doi: 10.1117/12.316679
Proc. SPIE 3283, Operation of a novel hot-electron vertical-cavity surface-emitting laser, 0000 (7 July 1998); doi: 10.1117/12.316680
Proc. SPIE 3283, Current self-distribution effect in vertical-cavity surface-emitting semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316681
Photonic Crystals and Squeezing
Proc. SPIE 3283, Analysis of photonic crystals for light-emitting diodes using the finite-difference time domain technique, 0000 (7 July 1998); doi: 10.1117/12.316682
Proc. SPIE 3283, Density of states and spontaneous emission rates in photonic crystals, 0000 (7 July 1998); doi: 10.1117/12.316683
Proc. SPIE 3283, Amplitude-squeezed light amplification in an optically coupled quantum well structure, 0000 (7 July 1998); doi: 10.1117/12.316684
Microcavity Physics
Proc. SPIE 3283, Quantum theory of spontaneous emission from microcavities, 0000 (7 July 1998); doi: 10.1117/12.316685
Proc. SPIE 3283, Stimulated emission from GaAs quantum well microcavities: toward laser emission from a few excitons, 0000 (7 July 1998); doi: 10.1117/12.316686
Proc. SPIE 3283, Theoretical and experimental analysis of the spontaneous emission and threshold current of edge-emitting Bragg microcavity laser structures, 0000 (7 July 1998); doi: 10.1117/12.316687
Proc. SPIE 3283, Angle-dependent multiple-wavelength radial emissions in a toroidal microcavity: a photonic quantum ring laser, 0000 (7 July 1998); doi: 10.1117/12.316688
Proc. SPIE 3283, Microcavity effects in the photoluminescence of hydrogenated amorphous silicon nitride, 0000 (7 July 1998); doi: 10.1117/12.316689
Quantum Well Laser Physics
Proc. SPIE 3283, Temperature-induced alpha factor, 0000 (7 July 1998); doi: 10.1117/12.316690
Proc. SPIE 3283, Carrier lifetime calculations and modulation response of intersubband semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316691
Proc. SPIE 3283, Temperature dependencies of output characteristics of 1.3-um InGaAsP/InP lasers with different profiles of p-doping, 0000 (7 July 1998); doi: 10.1117/12.316692
Proc. SPIE 3283, Impact of structural nonuniformity on the operation of AlGaInP lasers at high compressive strain, 0000 (7 July 1998); doi: 10.1117/12.316694
Proc. SPIE 3283, Novel light emitter and wavelength converter device, 0000 (7 July 1998); doi: 10.1117/12.316695
Nonlinear Properties of Semiconductor Lasers and Amplifiers
Proc. SPIE 3283, Snakes, TOADs, and butterflies: optical nonlinearities in semiconductor laser devices, 0000 (7 July 1998); doi: 10.1117/12.316696
Proc. SPIE 3283, Influence of high probe power on multiwave mixing characteristics of semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316697
Proc. SPIE 3283, Four-wave mixing among subpicosecond optical pulses in a semiconductor optical amplifier and its applications to optical sampling, 0000 (7 July 1998); doi: 10.1117/12.316698
Proc. SPIE 3283, Theoretical study of the perturbation-expanded higher-order nonlinear gain coefficients in injection semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316699
Proc. SPIE 3283, New model of self-pulsating semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316700
Symposium on Fundamental Nonlinear Dynamics of Optoelectronic Devices I
Proc. SPIE 3283, Bifurcations in a semiconductor laser with phase-conjugate feedback, 0000 (7 July 1998); doi: 10.1117/12.316701
Proc. SPIE 3283, Stability properties of diode lasers with phase-conjugate feedback, 0000 (7 July 1998); doi: 10.1117/12.316702
Proc. SPIE 3283, Generation of many periodic patterns by controlling chaos in external-cavity laser diodes, 0000 (7 July 1998); doi: 10.1117/12.316703
Proc. SPIE 3283, Synchronization of coupled semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316705
Proc. SPIE 3283, Optical-feedback-sustained self-pulsations in semiconductor lasers, 0000 (7 July 1998); doi: 10.1117/12.316706
Symposium on Fundamental Nonlinear Dynamics of Optoelectronic Devices II
Proc. SPIE 3283, Multimode dynamics of semiconductor lasers subject to strong optical feedback, 0000 (7 July 1998); doi: 10.1117/12.316707
Proc. SPIE 3283, Mechanism of the LFF phenomenon in the coherence collapse of semiconductor lasers: there is hope for Sisyphus!, 0000 (7 July 1998); doi: 10.1117/12.316708
Proc. SPIE 3283, High-frequency fluctuations in semiconductor lasers with optical feedback, 0000 (7 July 1998); doi: 10.1117/12.316709
Proc. SPIE 3283, Complicated dynamics due to a heteroclinic cycle in an injected diode laser, 0000 (7 July 1998); doi: 10.1117/12.316710
Progress in Ultrafast Optoelectronic Devices
Proc. SPIE 3283, Ultrafast spin relaxation in quantum-confined structures for all-optical switching, 0000 (7 July 1998); doi: 10.1117/12.316711
Proc. SPIE 3283, AlGaN/GaN intersubband transitions for Tb/s 1.55-um optical switches, 0000 (7 July 1998); doi: 10.1117/12.316712