PROCEEDINGS VOLUME 3284
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
In-Plane Semiconductor Lasers: from Ultraviolet to Mid-Infrared II
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
High-Power Lasers I
Proc. SPIE 3284, High-power Al-free active-region diode lasers, 0000 (7 April 1998); doi: 10.1117/12.304431
Proc. SPIE 3284, High-power diode lasers grown by solid-source MBE, 0000 (7 April 1998); doi: 10.1117/12.304439
Proc. SPIE 3284, Reliability aspects of 980-nm pump lasers in EDFA applications, 0000 (7 April 1998); doi: 10.1117/12.304447
Proc. SPIE 3284, Determination of carrier lifetimes using Hakki-Paoli gain data, 0000 (7 April 1998); doi: 10.1117/12.304457
High-Power Lasers II
Proc. SPIE 3284, Modulated-cap thin p-clad antiguided array lasers, 0000 (7 April 1998); doi: 10.1117/12.304464
Proc. SPIE 3284, Surface-emitting complex-coupled second-order distributed-feedback lasers for high-power applications, 0000 (7 April 1998); doi: 10.1117/12.304465
High-Brightness Lasers
Proc. SPIE 3284, High-power 1.5-um tapered-gain-region lasers, 0000 (7 April 1998); doi: 10.1117/12.304466
Proc. SPIE 3284, Beam quality in multiwatt semiconductor amplifiers, 0000 (7 April 1998); doi: 10.1117/12.304432
Proc. SPIE 3284, Improved beam quality for high-power tapered laser diodes with LMG (low-modal-gain) epitaxial layer structures, 0000 (7 April 1998); doi: 10.1117/12.304433
Visible Lasers I
Proc. SPIE 3284, InGaN/GaN lasers grown on SiC, 0000 (7 April 1998); doi: 10.1117/12.304434
Proc. SPIE 3284, Characterization of AlGaInN heterostructures and laser diodes, 0000 (7 April 1998); doi: 10.1117/12.304435
Proc. SPIE 3284, Pulsed operation of (Al,Ga,In)N blue laser diodes, 0000 (7 April 1998); doi: 10.1117/12.304436
Visible Lasers II
Proc. SPIE 3284, Gain-current relation in CdZnSe single quantum well lasers: modeling and experiment, 0000 (7 April 1998); doi: 10.1117/12.304437
Proc. SPIE 3284, Real-index-guided AlGaInP red laser with high-power characteristics grown by one-step MOVPE, 0000 (7 April 1998); doi: 10.1117/12.304438
Telecom Lasers I
Proc. SPIE 3284, 1.3-um InP-based n-type modulation-doped strained multiquantum well lasers for high-density parallel optical interconnections, 0000 (7 April 1998); doi: 10.1117/12.304440
Proc. SPIE 3284, 1.3-um InAsP/InAlGaAs MQW lasers for high-temperature operation, 0000 (7 April 1998); doi: 10.1117/12.304441
Proc. SPIE 3284, High-performance uncooled MQW DFB lasers at 1.3 um for OC-12 transmitter modules, 0000 (7 April 1998); doi: 10.1117/12.304442
Telecom Lasers II
Proc. SPIE 3284, AlGaInAs/InP ridge-guide lasers operating at 1.55 um, 0000 (7 April 1998); doi: 10.1117/12.304443
Proc. SPIE 3284, III-N-V: a novel material system for lasers with good high-temperature characteristics, 0000 (7 April 1998); doi: 10.1117/12.304444
Proc. SPIE 3284, GaInNAs/GaAs long-wavelength lasers, 0000 (7 April 1998); doi: 10.1117/12.304445
Quantum Cascade Lasers
Proc. SPIE 3284, Mid-IR intersubband quantum cascade lasers, 0000 (7 April 1998); doi: 10.1117/12.304446
Proc. SPIE 3284, Long-wavelength (15.5-um) quantum fountain intersubband laser InGaAs/AlGaAs quantum wells, 0000 (7 April 1998); doi: 10.1117/12.304448
Proc. SPIE 3284, Buried heterostructure quantum cascade lasers, 0000 (7 April 1998); doi: 10.1117/12.304449
Mid-IR Sources I
Proc. SPIE 3284, High-power broadened-waveguide InGaAsSb/AlGaAsSb quantum well diode lasers emitting at 2 um, 0000 (7 April 1998); doi: 10.1117/12.304450
Proc. SPIE 3284, Mid-infrared GaSb-InAs-based multiple quantum well lasers, 0000 (7 April 1998); doi: 10.1117/12.304451
Proc. SPIE 3284, Gain and threshold current density characteristics of 2-um GaInAsSb/AlGaAsSb MQW lasers with increased valence band offset, 0000 (7 April 1998); doi: 10.1117/12.304452
Mid-IR Sources II
Proc. SPIE 3284, Efficiency and power issues in Sb-based mid-infrared lasers, 0000 (7 April 1998); doi: 10.1117/12.304453
Proc. SPIE 3284, Mid-IR type-II diode lasers, 0000 (7 April 1998); doi: 10.1117/12.304454
Mid-IR Sources III
Proc. SPIE 3284, Mid-infrared interband cascade emission in InAs/GaInSb/AlSb type-II heterostructures, 0000 (7 April 1998); doi: 10.1117/12.304456
Mid-IR Sources II
Proc. SPIE 3284, High-power optically pumped type-II quantum well lasers, 0000 (7 April 1998); doi: 10.1117/12.304458
Mid-IR Sources III
Proc. SPIE 3284, Inapplicability of a simply parameterized threshold current in Sb-based IR lasers, 0000 (7 April 1998); doi: 10.1117/12.304459
Visible Lasers II
Proc. SPIE 3284, Modeling of gain for lasers based on CdSe planar QD system in ZnMgSSe matrix, 0000 (7 April 1998); doi: 10.1117/12.304460
Visible Lasers I
Proc. SPIE 3284, InGaN/GaN double heterostructure laser with cleaved facets, 0000 (7 April 1998); doi: 10.1117/12.304461
Mid-IR Sources I
Proc. SPIE 3284, Low-threshold high-power high-brightness GaInAsSb/AlGaAsSb quantum well lasers emitting at 2.05 um, 0000 (7 April 1998); doi: 10.1117/12.304462
Visible Lasers I
Proc. SPIE 3284, Continuous-wave room-temperature operation of InGaN/GaN multiquantum well lasers grown by low-pressure metalorganic chemical vapor deposition, 0000 (7 April 1998); doi: 10.1117/12.304463
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