PROCEEDINGS VOLUME 3285
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
Fabrication, Testing, Reliability, and Applications of Semiconductor Lasers III
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
Fabrication of Semiconductor Lasers
Proc. SPIE 3285, AlGaAs/GaAs etched-facet laser with in-situ C2H5Cl gas-phase etching and MOCVD regrowth, 0000 (4 May 1998); doi: 10.1117/12.307591
Proc. SPIE 3285, Critical issues in commercially viable semiconductor lasers, 0000 (4 May 1998); doi: 10.1117/12.307610
Proc. SPIE 3285, Epitaxial growth of n- and p-type ZnCdSe layers and light-emitting diodes, 0000 (4 May 1998); doi: 10.1117/12.307611
Proc. SPIE 3285, Optimization of microchannel heatsinks for high-power diode lasers in copper technology, 0000 (4 May 1998); doi: 10.1117/12.307612
Proc. SPIE 3285, 650-nm-band high-power and highly reliable laser diodes with a window-mirror structure, 0000 (4 May 1998); doi: 10.1117/12.307613
Diode Laser Characterization and Testing
Proc. SPIE 3285, High-speed semiconductor lasers, 0000 (4 May 1998); doi: 10.1117/12.307614
Proc. SPIE 3285, Observation of interface band bending on GaAs/AlAs heterostructures by scanning tunneling microscopy, 0000 (4 May 1998); doi: 10.1117/12.307615
Proc. SPIE 3285, Near-field optical characterization of visible multiple quantum well semiconductor lasers, 0000 (4 May 1998); doi: 10.1117/12.307592
Proc. SPIE 3285, Measurement of the Q factor of semiconductor laser cavities by Fourier analysis of the emission spectrum, 0000 (4 May 1998); doi: 10.1117/12.307593
Reliability of Semiconductor Lasers
Proc. SPIE 3285, Characteristics and reliability of high-power GaAs/AlGaAs laser diodes with a decoupled confinement heterostructure, 0000 (4 May 1998); doi: 10.1117/12.307594
Proc. SPIE 3285, High-speed transmission using surface-emitting lasers, 0000 (4 May 1998); doi: 10.1117/12.307595
Proc. SPIE 3285, Performance and reliability of high-power multimode lasers between 0.8 and 1 um, 0000 (4 May 1998); doi: 10.1117/12.307596
Laser Diodes for Display Applications
Proc. SPIE 3285, Laser-driven polyplanar optic display, 0000 (4 May 1998); doi: 10.1117/12.307597
Proc. SPIE 3285, Diode-pumped microlasers for display applications, 0000 (4 May 1998); doi: 10.1117/12.307598
Proc. SPIE 3285, Application of laser diodes and diffractive imaging in arts, 0000 (4 May 1998); doi: 10.1117/12.307599
Proc. SPIE 3285, Diode-pumped vanadate lasers for variable-resolution video projectors, 0000 (4 May 1998); doi: 10.1117/12.307600
Laser Diodes for Spectroscopy
Proc. SPIE 3285, Tunable distributed-feedback quantum-cascade lasers for gas-sensing applications, 0000 (4 May 1998); doi: 10.1117/12.307601
Proc. SPIE 3285, Airborne tunable diode laser measurements of trace atmospheric gases, 0000 (4 May 1998); doi: 10.1117/12.307602
Proc. SPIE 3285, Application of tunable diode laser spectroscopy in combustion, atmospheric, and material growth monitoring, 0000 (4 May 1998); doi: 10.1117/12.307603
High-Power Laser Diodes for Printing and Illumination
Proc. SPIE 3285, Diode-laser-illuminated automotive lamp systems, 0000 (4 May 1998); doi: 10.1117/12.307604
Proc. SPIE 3285, Modeling the effect of heatsink performance on high-peak-power laser-diode-bar pump sources for solid state lasers, 0000 (4 May 1998); doi: 10.1117/12.307605
Diode Lasers with Fiber Applications
Proc. SPIE 3285, High-brightness fiber-coupled diode laser module, 0000 (4 May 1998); doi: 10.1117/12.307606
Proc. SPIE 3285, Theoretical analysis of high-speed modulation of semiconductor lasers by electron heating, 0000 (4 May 1998); doi: 10.1117/12.307607
Proc. SPIE 3285, Intrinsically matched 50-ohm laser arrays with greater than 100% quantum efficiencies for optically coupled transistors and low-loss fiber optic links, 0000 (4 May 1998); doi: 10.1117/12.307608
Proc. SPIE 3285, Optical replication technique for wideband transient waveform digitization, 0000 (4 May 1998); doi: 10.1117/12.307609
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