PROCEEDINGS VOLUME 3286
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS | 24-30 JANUARY 1998
Vertical-Cavity Surface-Emitting Lasers II
OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
New Epitaxial Structures
Proc. SPIE 3286, Ultralow-threshold 850-nm oxide-apertured vertical-cavity lasers using AlInGaAs/AlGaAs strained active layers, 0000 (20 April 1998); doi: 10.1117/12.305463
Proc. SPIE 3286, Progress in GaInNAs/GaAs long-wavelength vertical-cavity surface-emitting lasers, 0000 (20 April 1998); doi: 10.1117/12.305466
Emerging VCSEL Applications
Proc. SPIE 3286, VCSEL applications in sensors and microsystems, 0000 (20 April 1998); doi: 10.1117/12.305467
Proc. SPIE 3286, Light efficient parallel interconnect using integrated planar free-space optics and vertical-cavity surface-emitting laser diodes, 0000 (20 April 1998); doi: 10.1117/12.305468
Proc. SPIE 3286, Combined photonics and MEMS function demonstration, 0000 (20 April 1998); doi: 10.1117/12.305469
Two-Dimensional VCSEL Arrays
Proc. SPIE 3286, Oxide-confined 2D VCSEL arrays for high-density inter/intra-chip interconnects, 0000 (20 April 1998); doi: 10.1117/12.305445
Proc. SPIE 3286, Uniformity and performance of selectively oxidized VCSEL arrays, 0000 (20 April 1998); doi: 10.1117/12.305447
Proc. SPIE 3286, VCSEL arrays with low threshold currents and stable linear polarization, 0000 (20 April 1998); doi: 10.1117/12.305448
Novel VCSEL Fabrication
Proc. SPIE 3286, Integration of LEDs and VCSELs using fluidic self-assembly, 0000 (20 April 1998); doi: 10.1117/12.305449
Proc. SPIE 3286, Vertical-cavity surface-emitting lasers fabricated using a sealing of AlAs against wet oxidation, 0000 (20 April 1998); doi: 10.1117/12.305450
Proc. SPIE 3286, Dependence of the lateral oxidation rate of an AlAs layer used as a current aperture in vertical-cavity surface-emitting lasers on different physical parameters, 0000 (20 April 1998); doi: 10.1117/12.305451
Proc. SPIE 3286, Real-time-controlled epitaxy of vertical-cavity surface-emitting lasers (VCSELs) using a standard pyrometer, 0000 (20 April 1998); doi: 10.1117/12.305452
Novel Laser Structures
Proc. SPIE 3286, VCSELs with a novel integrated quantum-well absorber, 0000 (20 April 1998); doi: 10.1117/12.305453
Proc. SPIE 3286, Coupled-resonator vertical-cavity laser, 0000 (20 April 1998); doi: 10.1117/12.305454
Proc. SPIE 3286, Room-temperature cw operation of InGaAsP/InP microdisk lasers, 0000 (20 April 1998); doi: 10.1117/12.305455
Emission Modes and Polarization
Proc. SPIE 3286, Transverse modes, patterns, and polarization behavior in VCSELs, 0000 (20 April 1998); doi: 10.1117/12.305456
Proc. SPIE 3286, Optical versus electrical pumping in VCSELs, 0000 (20 April 1998); doi: 10.1117/12.305457
Proc. SPIE 3286, Polarization selection in external-cavity birefringent vertical-cavity surface-emitting lasers, 0000 (20 April 1998); doi: 10.1117/12.305458
Proc. SPIE 3286, Bias-induced polarization properties in vertical-cavity surface-emitting lasers, 0000 (20 April 1998); doi: 10.1117/12.305459
Proc. SPIE 3286, Off-axis emission from native-oxide-confined VCSELs, 0000 (20 April 1998); doi: 10.1117/12.305460
VCSEL Performance and Analysis
Proc. SPIE 3286, High-power VCSELs: modeling and experimental characterization, 0000 (20 April 1998); doi: 10.1117/12.305461
Proc. SPIE 3286, Full vectorial eigenmode analysis of VCSELs: threshold gain values and modal frequencies, 0000 (20 April 1998); doi: 10.1117/12.305462
Proc. SPIE 3286, Optical optimization of microcavity VCSELs, 0000 (20 April 1998); doi: 10.1117/12.305464
Proc. SPIE 3286, Vertical-cavity surface-emitting laser: theoretical analysis and experimental investigation on white amplitude noise, 0000 (20 April 1998); doi: 10.1117/12.305465
New Epitaxial Structures
Proc. SPIE 3286, VCSELs in '98: what we have and what we can expect, 0000 (20 April 1998); doi: 10.1117/12.305446
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