OPTOELECTRONICS AND HIGH-POWER LASERS AND APPLICATIONS
24-30 January 1998
San Jose, CA, United States
Growth/Fabrication and Characterization of OEIC
Proc. SPIE 3290, Heterogeneous integration of optoelectronic components, 0000 (22 December 1997); doi: 10.1117/12.298226
Proc. SPIE 3290, Integrated photonic devices by selective-area MOCVD, 0000 (22 December 1997); doi: 10.1117/12.298236
Proc. SPIE 3290, GaInP/GaP quantum dots: a material for OEIC on silicon substrates, 0000 (22 December 1997); doi: 10.1117/12.298246
Photodetectors for OEICs I
Proc. SPIE 3290, Resonant-cavity photodetectors: performance and functionality, 0000 (22 December 1997); doi: 10.1117/12.298260
Proc. SPIE 3290, Ultrafast resonant-cavity-enhanced Schottky photodiodes, 0000 (22 December 1997); doi: 10.1117/12.298261
Photodetectors for OEICs II
Proc. SPIE 3290, Compact polarization sensors with vertically integrated photodetectors, 0000 (22 December 1997); doi: 10.1117/12.298262
Proc. SPIE 3290, Large-length high-speed discrete silicon photodetectors for coherent optical processing, 0000 (22 December 1997); doi: 10.1117/12.298263
Lasers and VCSELs for OEICs I
Proc. SPIE 3290, Beam control and manipulation in vertical-cavity surface-emitting lasers, 0000 (22 December 1997); doi: 10.1117/12.298227
Proc. SPIE 3290, Subwavelength transmission gratings and their applications in VCSELs, 0000 (22 December 1997); doi: 10.1117/12.298228
Proc. SPIE 3290, Long-wavelength triangular ring laser for monolithic integration, 0000 (22 December 1997); doi: 10.1117/12.298229
Lasers and VCSELs for OEICs II
Proc. SPIE 3290, Self-pulsations, bistability, and intracavity quantum well absorber modulation of VCSELs, 0000 (22 December 1997); doi: 10.1117/12.298230
Proc. SPIE 3290, High-speed broadband tunable lasers, 0000 (22 December 1997); doi: 10.1117/12.298231
Proc. SPIE 3290, OEIC-compatible laser source--LCI lasers: operation mechanisms and opportunities, 0000 (22 December 1997); doi: 10.1117/12.298232
Proc. SPIE 3290, Monolithic wavelength-graded VCSEL and wavelength-selective photodetector arrays for WDM applications, 0000 (22 December 1997); doi: 10.1117/12.298233
Proc. SPIE 3290, Theoretical investigation of quantum well lasers with heterojunction bipolar transistor structural compatibility, 0000 (22 December 1997); doi: 10.1117/12.298234
Modulators, Laser-Modulator Integration, and Waveguide Devices for OEICs I
Proc. SPIE 3290, Electroabsorption multiple quantum well modulators for high-frequency applications, 0000 (22 December 1997); doi: 10.1117/12.298235
Proc. SPIE 3290, Gas source molecular beam growth of multiple quantum well modulators, detectors, and avalanche photodiodes at 1.55 um, 0000 (22 December 1997); doi: 10.1117/12.298237
Proc. SPIE 3290, Edge-emitting quantum well laser with integrated intracavity electrostatic gate, 0000 (22 December 1997); doi: 10.1117/12.298238
Proc. SPIE 3290, Low-chirp cascaded multiple quantum well vertical light modulator, 0000 (22 December 1997); doi: 10.1117/12.298239
Modulators, Laser-Modulator Integration, and Waveguide Devices for OEICs II
Proc. SPIE 3290, Modal behavior of novel silicon-overlay LiNbO3 waveguides, 0000 (22 December 1997); doi: 10.1117/12.298240
Proc. SPIE 3290, Stress-induced channel waveguides in BaTiO3 epitaxial films, 0000 (22 December 1997); doi: 10.1117/12.298241
Proc. SPIE 3290, Integrated tunable laser with mode-selection modulator, 0000 (22 December 1997); doi: 10.1117/12.298242
Proc. SPIE 3290, Fabrication of low-loss GaAs/AlGaAs Mach Zehnder modulators using proton isolation, 0000 (22 December 1997); doi: 10.1117/12.298243
Proc. SPIE 3290, Dual-functional polymeric waveguide with optical amplification and electro-optic modulation, 0000 (22 December 1997); doi: 10.1117/12.298244
Silicon/Polymer Photonics for OEIC
Proc. SPIE 3290, Silicon photonics, 0000 (22 December 1997); doi: 10.1117/12.298245
Proc. SPIE 3290, Visible electroluminescence in Si/adsorbed gas superlattice, 0000 (22 December 1997); doi: 10.1117/12.298247
Optoelectronic Integrated Circuits
Proc. SPIE 3290, Widely tunable integrated filter/receiver with apodized grating-assisted codirectional coupler, 0000 (22 December 1997); doi: 10.1117/12.298248
Proc. SPIE 3290, 1.55-um InP-based monolithically integrated multichannel photoreceiver arrays, 0000 (22 December 1997); doi: 10.1117/12.298249
Proc. SPIE 3290, Waveguide beamsplitters integrated with an erbium-doped thin-film optical amplifier, 0000 (22 December 1997); doi: 10.1117/12.298250
Proc. SPIE 3290, Readout characteristics of integrated monolithic InGaAs active pixel sensor array, 0000 (22 December 1997); doi: 10.1117/12.298251
Proc. SPIE 3290, 4x4 optoelectronic switch matrix integrating an MSM array with polyimide optical waveguides, 0000 (22 December 1997); doi: 10.1117/12.298252
Proc. SPIE 3290, Compact 2.4-THz 5-bit substrate-guided-wave photonic true-time-delay module for phased array antennas, 0000 (22 December 1997); doi: 10.1117/12.298253
Proc. SPIE 3290, Design of basic elements of molecular computers based on quantum chemical investigations of photoactive organic molecules, 0000 (22 December 1997); doi: 10.1117/12.298254
Systems and Applications in OEICs
Proc. SPIE 3290, Recent progress on practical PLC devices for optical access systems and dense WDM systems, 0000 (22 December 1997); doi: 10.1117/12.298255
Proc. SPIE 3290, Photonic-integrated circuits for WDM transmission and networking, 0000 (22 December 1997); doi: 10.1117/12.298256
Proc. SPIE 3290, Integrated optical circuits for space applications, 0000 (22 December 1997); doi: 10.1117/12.298257
Proc. SPIE 3290, Behavioral modeling approach for optical communication network design, 0000 (22 December 1997); doi: 10.1117/12.298258
Proc. SPIE 3290, Accoustically steered and rotated (ASTRO) optoelectronic 2D true-time-delay generation, 0000 (22 December 1997); doi: 10.1117/12.298259
Back to Top