PROCEEDINGS VOLUME 3301
PHOTONICS WEST '98 ELECTRONIC IMAGING | 24-30 JANUARY 1998
Solid State Sensor Arrays: Development and Applications II
IN THIS VOLUME

0 Sessions, 21 Papers, 0 Presentations
CMOS Sensors  (6)
PHOTONICS WEST '98 ELECTRONIC IMAGING
24-30 January 1998
San Jose, CA, United States
New Devices and Technologies
Proc. SPIE 3301, Large-area low-noise amorphous silicon imaging system, 0000 (1 April 1998); doi: 10.1117/12.304549
Proc. SPIE 3301, Time delay and integration image sensor with high-speed output architecture, 0000 (1 April 1998); doi: 10.1117/12.304559
Proc. SPIE 3301, High-speed linear CCD sensor with pinned photodiode photosite for low-lag and low-noise imaging, 0000 (1 April 1998); doi: 10.1117/12.304565
Proc. SPIE 3301, Versatile building-block architecture for large-area high-performance CCD imagers, 0000 (1 April 1998); doi: 10.1117/12.304567
Proc. SPIE 3301, Charge-transfer-efficiency (CTE) measurement techniques applied to proton-irradiated linear charge-coupled devices, 0000 (1 April 1998); doi: 10.1117/12.304568
Proc. SPIE 3301, Method for extending the dynamic range of CCD instruments, 0000 (1 April 1998); doi: 10.1117/12.304569
X-ray Sensors
Proc. SPIE 3301, Large format CID x-ray image sensors, 0000 (1 April 1998); doi: 10.1117/12.304550
Proc. SPIE 3301, Absolute calibration of charge-coupled devices to hard 8- to 98-keV x rays, 0000 (1 April 1998); doi: 10.1117/12.304551
Proc. SPIE 3301, Quantum efficiency of x-ray CCDs, 0000 (1 April 1998); doi: 10.1117/12.304552
Proc. SPIE 3301, Improving resolution of solid state linear array x-ray detectors, 0000 (1 April 1998); doi: 10.1117/12.304553
Proc. SPIE 3301, Prototype of 2D direct x-ray a-SiN:H sensor array, 0000 (1 April 1998); doi: 10.1117/12.304554
Proc. SPIE 3301, EB-CCD life characteristics, 0000 (1 April 1998); doi: 10.1117/12.304555
CMOS Sensors
Proc. SPIE 3301, Design and characterization of CMOS APS imagers with two different technologies, 0000 (1 April 1998); doi: 10.1117/12.304556
Proc. SPIE 3301, Memory read-out approach for a 0.5-um CMOS image sensor, 0000 (1 April 1998); doi: 10.1117/12.304557
Proc. SPIE 3301, Pixel structure and layout for CMOS active pixel image sensor, 0000 (1 April 1998); doi: 10.1117/12.304558
Proc. SPIE 3301, Modeling and estimation of FPN components in CMOS image sensors, 0000 (1 April 1998); doi: 10.1117/12.304560
Proc. SPIE 3301, Method for estimating quantum efficiency for CMOS image sensors, 0000 (1 April 1998); doi: 10.1117/12.304561
Proc. SPIE 3301, Front-side-bombarded metal-plated CMOS electron sensors, 0000 (1 April 1998); doi: 10.1117/12.304562
New Devices and Technologies
Proc. SPIE 3301, Monte Carlo model for describing charge transfer in irradiated CCDs, 0000 (1 April 1998); doi: 10.1117/12.304563
Proc. SPIE 3301, Large-area HgI2 pixel detector experiments, 0000 (1 April 1998); doi: 10.1117/12.304564
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