PROCEEDINGS VOLUME 3331
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 22-27 FEBRUARY 1998
Emerging Lithographic Technologies II
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
22-27 February 1998
Santa Clara, CA, United States
EUV Lithography I
Proc. SPIE 3331, EUV optical design for a 100-nm CD imaging system, 0000 (5 June 1998); doi: 10.1117/12.309559
Proc. SPIE 3331, Three-aspherical-mirror system for EUV lithography, 0000 (5 June 1998); doi: 10.1117/12.309580
Proc. SPIE 3331, Top-surface imaging resists for EUV lithography, 0000 (5 June 1998); doi: 10.1117/12.309590
EUV Lithography II
Proc. SPIE 3331, Multilayer reflective coatings for extreme-ultraviolet lithography, 0000 (5 June 1998); doi: 10.1117/12.309600
Proc. SPIE 3331, Beamline for measurement and characterization of multilayer optics for EUV lithography, 0000 (5 June 1998); doi: 10.1117/12.309608
Proc. SPIE 3331, Multilayer coating and tests of a 10x extreme-ultraviolet lithographic camera, 0000 (5 June 1998); doi: 10.1117/12.309617
Proc. SPIE 3331, Scattering from normal-incidence EUV optics, 0000 (5 June 1998); doi: 10.1117/12.309625
Poster Session
Proc. SPIE 3331, Control of defects in EUV multilayers and demonstration of at-wavelength defect characterization by EUV microscopy, 0000 (5 June 1998); doi: 10.1117/12.309634
EUV Lithography II
Proc. SPIE 3331, High-power extreme-ultraviolet source based on gas jets, 0000 (5 June 1998); doi: 10.1117/12.309560
EUV Lithography III
Proc. SPIE 3331, Minimizing mapping-induced OPD errors when testing aspheric mirrors, 0000 (5 June 1998); doi: 10.1117/12.309561
Proc. SPIE 3331, Rigorous method for compensation selection and alignment of microlithographic optical systems, 0000 (5 June 1998); doi: 10.1117/12.309562
Proc. SPIE 3331, Characterization of the accuracy of EUV phase-shifting point diffraction interferometry, 0000 (5 June 1998); doi: 10.1117/12.309563
Proc. SPIE 3331, Impact of thermal and structural effects on EUV lithographic performance, 0000 (5 June 1998); doi: 10.1117/12.309564
Proc. SPIE 3331, Advances in the reduction and compensation of film stress in high-reflectance multilayer coatings for extreme-ultraviolet lithography, 0000 (5 June 1998); doi: 10.1117/12.309565
X-Ray Lithography
Proc. SPIE 3331, Analysis and identification of factors contributing to the overlay budget, 0000 (5 June 1998); doi: 10.1117/12.309567
Proc. SPIE 3331, ACLV control in x-ray lithography, 0000 (5 June 1998); doi: 10.1117/12.309568
Poster Session
Proc. SPIE 3331, Modeling study of image formation with point sources, 0000 (5 June 1998); doi: 10.1117/12.309569
X-Ray Lithography
Proc. SPIE 3331, Mask and wafer inspection and cleaning for proximity x-ray lithography, 0000 (5 June 1998); doi: 10.1117/12.309571
Novel Lithographic Technologies
Proc. SPIE 3331, National technology roadmap for semiconductors: an analysis and perspective, 0000 (5 June 1998); doi: 10.1117/12.309572
Proc. SPIE 3331, Large-area high-throughput high-resolution lithography systems for flat-panel displays and microelectronic modules, 0000 (5 June 1998); doi: 10.1117/12.309573
Proc. SPIE 3331, Lithography on flexible substrates: a roll-to-roll high-throughput high-resolution system for low-cost production of microelectronics, 0000 (5 June 1998); doi: 10.1117/12.309574
Poster Session
Proc. SPIE 3331, Mix-and-match interferometric and optical lithographies for nanoscale structures, 0000 (5 June 1998); doi: 10.1117/12.309575
Mask Technology for Advanced Lithography
Proc. SPIE 3331, Mask requirements for advanced lithography, 0000 (5 June 1998); doi: 10.1117/12.309576
Proc. SPIE 3331, Pattern generation requirements for mask making beyond 130 nm, 0000 (5 June 1998); doi: 10.1117/12.309577
Proc. SPIE 3331, Characterization of oxynitride hard mask removal processes for refractory x-ray mask fabrication, 0000 (5 June 1998); doi: 10.1117/12.309578
Proc. SPIE 3331, Transient thermal distortions of x-ray mask membranes during exposure scanning, 0000 (5 June 1998); doi: 10.1117/12.309579
Proc. SPIE 3331, Photomask in-plane distortion induced during e-beam patterning, 0000 (5 June 1998); doi: 10.1117/12.309581
Proc. SPIE 3331, Mixed-proximity holographic mask technology for 50-nm VLSI by x-ray lithography, 0000 (5 June 1998); doi: 10.1117/12.309582
Electron-Beam Lithography
Proc. SPIE 3331, Performance limitations from Coulomb interaction in maskless parallel electron-beam lithography systems, 0000 (5 June 1998); doi: 10.1117/12.309583
Proc. SPIE 3331, Critical dimension and write time performance: a next-generation vector electron-beam mask patterning system, 0000 (5 June 1998); doi: 10.1117/12.309584
Proc. SPIE 3331, Development of a next-generation e-beam lithography system for 1-Gb DRAM masks, 0000 (5 June 1998); doi: 10.1117/12.309585
Proc. SPIE 3331, Electron-beam direct writing technology for fine gate patterning, 0000 (5 June 1998); doi: 10.1117/12.309586
Proc. SPIE 3331, Proximity effect correction by a supplementary-exposure method in high-throughput block-exposure electron-beam direct writing, 0000 (5 June 1998); doi: 10.1117/12.309587
Novel Resist and Process Technology
Proc. SPIE 3331, Synchrotron radiation process and in-situ observation technique: infrared reflection absorption spectroscopy, 0000 (5 June 1998); doi: 10.1117/12.309588
Proc. SPIE 3331, New family of non-chemically amplified resists, 0000 (5 June 1998); doi: 10.1117/12.309589
Proc. SPIE 3331, Development of SiO2/c-Si bilayer e-beam resist process and its application for 10-nm-scale MIM junctions, 0000 (5 June 1998); doi: 10.1117/12.309591
Proc. SPIE 3331, Conducting electron-beam resists based on polyaniline, 0000 (5 June 1998); doi: 10.1117/12.309592
Proc. SPIE 3331, 100-nm CMOS gates patterned with 3 sigma below 10 nm, 0000 (5 June 1998); doi: 10.1117/12.309593
Proc. SPIE 3331, Application of fullerene C60 thin films as an electron-beam resist for micro- and nanolithography, 0000 (5 June 1998); doi: 10.1117/12.309594
Poster Session
Proc. SPIE 3331, Determining photoresist coat sensitivities of 300-mm wafers, 0000 (5 June 1998); doi: 10.1117/12.309595
Proc. SPIE 3331, TEMP: a software package for simulation of resist heating in electron-beam lithography, 0000 (5 June 1998); doi: 10.1117/12.309596
Proc. SPIE 3331, Electron-beam lithography on multilayer substrates: experimental and theoretical study, 0000 (5 June 1998); doi: 10.1117/12.309597
Proc. SPIE 3331, Linewidth controllability depending on electron-beam blur and resist thickness, 0000 (5 June 1998); doi: 10.1117/12.309598
Proc. SPIE 3331, Compact recycled beam source for XRL and EUVL exposure tools, 0000 (5 June 1998); doi: 10.1117/12.309599
Proc. SPIE 3331, Optimization of pattern shape in electron-beam cell projection lithography, 0000 (5 June 1998); doi: 10.1117/12.309601
Proc. SPIE 3331, Highly accurate stitching method between cell projection and variably shaped e-beam shots, 0000 (5 June 1998); doi: 10.1117/12.309602
Proc. SPIE 3331, Application of development-free vapor photolithography in etching silicon nitride, 0000 (5 June 1998); doi: 10.1117/12.309603
Proc. SPIE 3331, UVIII-positive chemically amplified resist optimization, 0000 (5 June 1998); doi: 10.1117/12.309604
Proc. SPIE 3331, Interferometric lithography pattern delimited by a mask image, 0000 (5 June 1998); doi: 10.1117/12.309605
Proc. SPIE 3331, Koehler-illumination-based method to improve beam size controllability, 0000 (5 June 1998); doi: 10.1117/12.309606
Proc. SPIE 3331, Novel x-ray mask structure with low out-of-plane distortion, 0000 (5 June 1998); doi: 10.1117/12.309607
Proc. SPIE 3331, 400- and 750-MHz one- and two-dimensional nuclear magnetic resonance spectra of x-ray-degraded poly(methyl methacrylate): comparison with UV-degraded material, 0000 (5 June 1998); doi: 10.1117/12.309609
Proc. SPIE 3331, Surface chemistry of GaAs wafers and reaction with chemically amplified resists during resist processing, 0000 (5 June 1998); doi: 10.1117/12.309610
Mask Technology for Advanced Lithography
Proc. SPIE 3331, Pellicles for x-ray lithography masks, 0000 (5 June 1998); doi: 10.1117/12.309611
Poster Session
Proc. SPIE 3331, Shot-noise impact on resist roughness in EUV lithography, 0000 (5 June 1998); doi: 10.1117/12.309612