PROCEEDINGS VOLUME 3332
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 22-27 FEBRUARY 1998
Metrology, Inspection, and Process Control for Microlithography XII
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
22-27 February 1998
Santa Clara, CA, United States
Scanning Probe Microscopy
Proc. SPIE 3332, AFM: a valid reference tool?, 0000 (8 June 1998); doi: 10.1117/12.308718
Proc. SPIE 3332, Strategy for faster blind reconstruction of tip geometry for scanned probe microscopy, 0000 (8 June 1998); doi: 10.1117/12.308727
Proc. SPIE 3332, Metrology methods for the quantification of edge roughness, 0000 (8 June 1998); doi: 10.1117/12.308735
Proc. SPIE 3332, Plasma etch process characterization: an application of atomic force microscopy, 0000 (8 June 1998); doi: 10.1117/12.308745
Scanning Electron Microscopy I
Proc. SPIE 3332, Ultralow-energy imaging for metrology, 0000 (8 June 1998); doi: 10.1117/12.308753
Proc. SPIE 3332, Approach to CD-SEM metrology utilizing the full waveform signal, 0000 (8 June 1998); doi: 10.1117/12.308759
Proc. SPIE 3332, Nanometer-level metrology with a low-voltage CD SEM, 0000 (8 June 1998); doi: 10.1117/12.308768
Proc. SPIE 3332, Evaluation of scanning electron microscope resolution, 0000 (8 June 1998); doi: 10.1117/12.308779
Proc. SPIE 3332, Influence of various factors on charging effects in linewidth metrology, 0000 (8 June 1998); doi: 10.1117/12.308787
Proc. SPIE 3332, Matching analysis on seven manufacturing CD SEMs, 0000 (8 June 1998); doi: 10.1117/12.308719
Scanning Electron Microscopy II
Proc. SPIE 3332, Some issues in SEM-based metrology, 0000 (8 June 1998); doi: 10.1117/12.308720
Proc. SPIE 3332, Subnanometer-precision metrology for 100-nm gate linewidth control, 0000 (8 June 1998); doi: 10.1117/12.308721
Proc. SPIE 3332, Comparison of properties of electrical test structures patterned in BESOI and SIMOX films for CD reference-material applications, 0000 (8 June 1998); doi: 10.1117/12.308722
Proc. SPIE 3332, Measuring the size and intensity distribution of SEM beam spot, 0000 (8 June 1998); doi: 10.1117/12.308723
Proc. SPIE 3332, Toward a unified advanced CD-SEM specification for sub-0.18-um technology, 0000 (8 June 1998); doi: 10.1117/12.308724
Registration and Overlay I
Proc. SPIE 3332, High-resolution profilometry for improved overlay measurements of CMP-processed layers, 0000 (8 June 1998); doi: 10.1117/12.308725
Proc. SPIE 3332, New method of correlating product wafer yield to alignment performance and an optimized accounting method for product wafer alignment, 0000 (8 June 1998); doi: 10.1117/12.308726
Proc. SPIE 3332, Overlay error due to lens coma and asymmetric illumination dependence on pattern features, 0000 (8 June 1998); doi: 10.1117/12.308728
Process Control Optimization I
Proc. SPIE 3332, Seeing the forest for the trees: a new approach to CD control, 0000 (8 June 1998); doi: 10.1117/12.308729
Proc. SPIE 3332, Defect inspection and linewidth measurement of SCALPEL thin membrane masks using optical transmission, 0000 (8 June 1998); doi: 10.1117/12.308730
Proc. SPIE 3332, Rapid yield learning through optical defect and electrical test analysis, 0000 (8 June 1998); doi: 10.1117/12.308731
Proc. SPIE 3332, SPC tracking and run monitoring of a CD SEM, 0000 (8 June 1998); doi: 10.1117/12.308732
Resist Process Metrology
Proc. SPIE 3332, Ultrasonic cure and temperature monitoring of photoresist during the pre-exposure bake process, 0000 (8 June 1998); doi: 10.1117/12.308733
Proc. SPIE 3332, In-situ metrology for deep-ultraviolet lithography process control, 0000 (8 June 1998); doi: 10.1117/12.308734
Proc. SPIE 3332, Optimal temperature profiles for postexposure bake of photoresist, 0000 (8 June 1998); doi: 10.1117/12.308736
Proc. SPIE 3332, Ellipsometric scatterometry for sub-0.1-um CD measurements, 0000 (8 June 1998); doi: 10.1117/12.308737
Defect Detection and Analysis
Proc. SPIE 3332, Automated defect inspection: past, present, and future, 0000 (8 June 1998); doi: 10.1117/12.308738
Proc. SPIE 3332, Methodology for the optimization of an i-line lithographic process for defect reduction, 0000 (8 June 1998); doi: 10.1117/12.308739
Proc. SPIE 3332, Specific defect density: a new approach for defect reduction, 0000 (8 June 1998); doi: 10.1117/12.308740
Proc. SPIE 3332, Defect inspection of zero E-field border on i-line 9% PSM, 0000 (8 June 1998); doi: 10.1117/12.308741
Proc. SPIE 3332, New particle-inspection system for CMP-planarization-processed metal layers, 0000 (8 June 1998); doi: 10.1117/12.308742
Registration and Overlay II
Proc. SPIE 3332, Optimal sampling strategies for sub-100-nm overlay, 0000 (8 June 1998); doi: 10.1117/12.308743
Proc. SPIE 3332, Overlay target design characterization and optimization for tungsten CMP, 0000 (8 June 1998); doi: 10.1117/12.308744
Process Control Optimization II
Proc. SPIE 3332, Influence of lens aberrations on high-resolution imaging on low-reflectivity substrates, 0000 (8 June 1998); doi: 10.1117/12.308746
Proc. SPIE 3332, Refractive-index measurements of photoresist and antireflective coatings with variable angle spectroscopic ellipsometry, 0000 (8 June 1998); doi: 10.1117/12.308747
Proc. SPIE 3332, Manufacturability of subwavelength features using reticle and substrate enhancements, 0000 (8 June 1998); doi: 10.1117/12.308748
Proc. SPIE 3332, Characterizing optical properties of red, green, and blue color filters for automated film-thickness measurement, 0000 (8 June 1998); doi: 10.1117/12.308749
Proc. SPIE 3332, Optical thin-film decomposition for DUV positive-tone resist process monitoring, 0000 (8 June 1998); doi: 10.1117/12.308750
Linewidth Calibration Metrology
Proc. SPIE 3332, Measurement of pitch and width samples with the NIST calibrated atomic force microscope, 0000 (8 June 1998); doi: 10.1117/12.308751
Proc. SPIE 3332, Photomask-edge-roughness characterization using an atomic force microscope, 0000 (8 June 1998); doi: 10.1117/12.308752
Proc. SPIE 3332, Developing a method to determine linewidth based on counting the atom spacings across a line, 0000 (8 June 1998); doi: 10.1117/12.308754
Poster Session
Proc. SPIE 3332, Scanning force microscope using point diffraction interferometer, 0000 (8 June 1998); doi: 10.1117/12.308755
Proc. SPIE 3332, Advanced surface inspection techniques for SOI wafers, 0000 (8 June 1998); doi: 10.1117/12.308756
Proc. SPIE 3332, Advances in characterizing SiON for 0.18- and 0.25-um technologies, 0000 (8 June 1998); doi: 10.1117/12.308757
Linewidth Calibration Metrology
Proc. SPIE 3332, Accuracy and traceability in dimensional measurements, 0000 (8 June 1998); doi: 10.1117/12.308758
Poster Session
Proc. SPIE 3332, Monte Carlo simulations of electron-beam/solid interactions as an aid in interpretation of EDS and auger analysis of particles and defects, 0000 (8 June 1998); doi: 10.1117/12.308760
Proc. SPIE 3332, Examination of several novel approaches for the measurement of two-dimensional roughness of sidewalls of high-aspect-ratio patterns using the atomic force microscope, 0000 (8 June 1998); doi: 10.1117/12.308761
Proc. SPIE 3332, Fast-etch antireflective coating for sub-0.35-um i-line microlithography applications, 0000 (8 June 1998); doi: 10.1117/12.308762
Scanning Electron Microscopy II
Proc. SPIE 3332, Limitation of CD AFM on resist foot detection, 0000 (8 June 1998); doi: 10.1117/12.308763
Poster Session
Proc. SPIE 3332, Optical scatterometry of quarter-micron patterns using neural regression, 0000 (8 June 1998); doi: 10.1117/12.308764
Proc. SPIE 3332, Comparison of recent development models in optical lithography simulation, 0000 (8 June 1998); doi: 10.1117/12.308765
Proc. SPIE 3332, Contamination monitoring for ammonia, amines, and acid gases utilizing ion mobility spectroscopy (IMS), 0000 (8 June 1998); doi: 10.1117/12.308766
Proc. SPIE 3332, Precision improvement for the calibration of submicron dimension reference for electron-beam metrology system, 0000 (8 June 1998); doi: 10.1117/12.308767
Proc. SPIE 3332, Evaluation of the KLA-Tencor 2138 for line monitoring applications, 0000 (8 June 1998); doi: 10.1117/12.308769
Proc. SPIE 3332, Characterization of a chemically amplified photoresist for simulation using a modified "poor man's DRM" methodology, 0000 (8 June 1998); doi: 10.1117/12.308770
Proc. SPIE 3332, Characterization of a positive chemically amplified photoresist for process control, 0000 (8 June 1998); doi: 10.1117/12.308771
Proc. SPIE 3332, Definition and control of contact holes in a CMP process, 0000 (8 June 1998); doi: 10.1117/12.308772