PROCEEDINGS VOLUME 3333
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY | 22-27 FEBRUARY 1998
Advances in Resist Technology and Processing XV
23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
22-27 February 1998
Santa Clara, CA, United States
ArF Materials I
Proc. SPIE 3333, Polymer design in surface modification resist process for ArF lithography, 0000 (29 June 1998); doi: 10.1117/12.312340
Proc. SPIE 3333, Design of cycloolefin-maleic-anhydride resist for ArF lithography, 0000 (29 June 1998); doi: 10.1117/12.312408
Proc. SPIE 3333, ArF single-layer photoresists based on alkaline-developable ROMP-H resin, 0000 (29 June 1998); doi: 10.1117/12.312419
Proc. SPIE 3333, Deblocking reaction of chemically amplified ArF positive resists, 0000 (29 June 1998); doi: 10.1117/12.312429
Proc. SPIE 3333, Adhesion characteristics of alicyclic polymers for use in ArF excimer laser lithography, 0000 (29 June 1998); doi: 10.1117/12.312438
Proc. SPIE 3333, Novel strategy for the design of highly transparent ArF resists with excellent dry etch resistance, 0000 (29 June 1998); doi: 10.1117/12.312448
Proc. SPIE 3333, Discrimination enchancement in polysilsesquioxane-based positive resists for ArF lithography, 0000 (29 June 1998); doi: 10.1117/12.312454
Proc. SPIE 3333, 193-nm single-layer photoresists based on alternating copolymers of cycloolefins: the use of photogenerators of sulfamic acids, 0000 (29 June 1998); doi: 10.1117/12.312462
Proc. SPIE 3333, New approach to 193-nm photoresists: polyspironorbornane polymers, 0000 (29 June 1998); doi: 10.1117/12.312471
ArF Materials II
Proc. SPIE 3333, Chemically amplified ArF resists based on cleavable alicyclic group and the absorption band shift method, 0000 (29 June 1998); doi: 10.1117/12.312341
Proc. SPIE 3333, Design and study of water-soluble positive- and negative-tone imaging materials, 0000 (29 June 1998); doi: 10.1117/12.312351
Proc. SPIE 3333, Reactive ion etching of 193-nm resist candidates: current platforms and future requirements, 0000 (29 June 1998); doi: 10.1117/12.312362
Proc. SPIE 3333, Optimization of etch conditions for a silicon-containing methacrylate-based bilayer resist for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312373
Proc. SPIE 3333, Thermal stability of silicon-containing methacrylate-based bilayer resist for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312383
Proc. SPIE 3333, Lithographic performance of a dry-etch stable methacrylate resist at 193 nm, 0000 (29 June 1998); doi: 10.1117/12.312393
ArF Process
Proc. SPIE 3333, Dual-wavelength photoresist for sub-200-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312403
Proc. SPIE 3333, Progress in 193-nm top-surface imaging process development, 0000 (29 June 1998); doi: 10.1117/12.312405
Proc. SPIE 3333, Processing of acrylate-based 193-nm resists: influence of physico-chemical properties, 0000 (29 June 1998); doi: 10.1117/12.312406
Proc. SPIE 3333, Negative-tone TSI process for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312407
Proc. SPIE 3333, Effect of the dissolution contrast on process margins in 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312409
DUV Materials
Proc. SPIE 3333, Chemical and lithographic aspects of organic deep-UV BARCs, 0000 (29 June 1998); doi: 10.1117/12.312410
Proc. SPIE 3333, Deep-ultraviolet antireflective coating with improved conformality, optical density, and etch rate, 0000 (29 June 1998); doi: 10.1117/12.312412
Proc. SPIE 3333, Choice of amines as stabilizers for chemically amplified resist systems, 0000 (29 June 1998); doi: 10.1117/12.312413
Proc. SPIE 3333, Positive- and negative-tone water-processable photoresists: a progress report, 0000 (29 June 1998); doi: 10.1117/12.312414
DUV Process
Proc. SPIE 3333, Modeling parameter extraction for DNQ-novolak thick film resists, 0000 (29 June 1998); doi: 10.1117/12.312415
Proc. SPIE 3333, Probabilistic model for the mechanism of phenolic polymer dissolution, 0000 (29 June 1998); doi: 10.1117/12.312416
Proc. SPIE 3333, Extension of 248-nm optical lithography: a thin film imaging approach, 0000 (29 June 1998); doi: 10.1117/12.312417
Proc. SPIE 3333, Study of bake mechanisms by real-time in-situ ellipsometry, 0000 (29 June 1998); doi: 10.1117/12.312418
Proc. SPIE 3333, Can sub-0.18-um FEOL be realized in production with KrF DUV?, 0000 (29 June 1998); doi: 10.1117/12.312420
Proc. SPIE 3333, Resist edge roughness with reducing pattern size, 0000 (29 June 1998); doi: 10.1117/12.312421
Proc. SPIE 3333, Inorganic bottom ARC SiOxNy for interconnection levels on 0.18-um technology, 0000 (29 June 1998); doi: 10.1117/12.312422
Novolak Materials and Processes
Proc. SPIE 3333, Novel antireflective structure for metal layer patterning, 0000 (29 June 1998); doi: 10.1117/12.312423
Proc. SPIE 3333, Advance of resist profile control in multilayer resist process for sub-150-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312424
Proc. SPIE 3333, Comparisons of critical parameters for high- and low-activation-energy deep-UV photoresists, 0000 (29 June 1998); doi: 10.1117/12.312425
Proc. SPIE 3333, Application of plasma-polymerized methylsilane for 0.18-um photolithography, 0000 (29 June 1998); doi: 10.1117/12.312426
Poster Session: Novolak Materials
Proc. SPIE 3333, Effect of resin molecular weight on novolak dissolution, 0000 (29 June 1998); doi: 10.1117/12.312427
Novolak Materials and Processes
Proc. SPIE 3333, Design of i-line photoresist capable of sub-quarter-micron lithography: effects of novel phenolic resin with controlled end group, 0000 (29 June 1998); doi: 10.1117/12.312428
Poster Session: DUV Processing
Proc. SPIE 3333, Control of acidity of the substrate for precise pattern fabrication using a chemically amplified resist, 0000 (29 June 1998); doi: 10.1117/12.312430
Poster Session: Novolak Materials
Proc. SPIE 3333, Effects of a visualization dye in a thick film photoresist, 0000 (29 June 1998); doi: 10.1117/12.312431
Poster Session: DUV Processing
Proc. SPIE 3333, New development model: aggregate extraction development, 0000 (29 June 1998); doi: 10.1117/12.312432
Proc. SPIE 3333, Proximity bias swing: origin and characterization, 0000 (29 June 1998); doi: 10.1117/12.312433
Poster Session: Aspects in Lithography
Proc. SPIE 3333, Resist deposition without spinning by using novel inkjet technology and direct lithography for MEMS, 0000 (29 June 1998); doi: 10.1117/12.312434
Poster Session: ArF Materials
Proc. SPIE 3333, Novel ArF photoresist system using acrylic polymer, 0000 (29 June 1998); doi: 10.1117/12.312435
Poster Session: Aspects in Lithography
Proc. SPIE 3333, Techniques for the analysis of Cl- ion in TMAH, 0000 (29 June 1998); doi: 10.1117/12.312436
Poster Session: Novolak-Based Processing
Proc. SPIE 3333, Image reversal at nm scales, 0000 (29 June 1998); doi: 10.1117/12.312437
Poster Session: ArF Processing
Proc. SPIE 3333, Improved positive surface modification resist process for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.312439
Novolak Materials and Processes
Proc. SPIE 3333, New design principle for the PACs of novolak resists, 0000 (29 June 1998); doi: 10.1117/12.312440
Poster Session: DUV Processing
Proc. SPIE 3333, Examination of develop puddle time and its effects on lithographic performance, 0000 (29 June 1998); doi: 10.1117/12.312441
Proc. SPIE 3333, Application of a bilayer silylated resist process in volume production, 0000 (29 June 1998); doi: 10.1117/12.312442
Poster Session: Novolak-Based Processing
Proc. SPIE 3333, Contrast enhancement by alkali decomposable additives in quinonediazide-type positive resists, 0000 (29 June 1998); doi: 10.1117/12.312443
Poster Session: Aspects in Lithography
Proc. SPIE 3333, Chemistry of photoresist reclamation, 0000 (29 June 1998); doi: 10.1117/12.312444
Poster Session: ArF Processing
Proc. SPIE 3333, Standard developer available ArF resist and performance, 0000 (29 June 1998); doi: 10.1117/12.312445
Poster Session: Novolak Materials
Proc. SPIE 3333, Resin fractionation effect for photoresist performance, 0000 (29 June 1998); doi: 10.1117/12.312446
Poster Session: DUV Processing
Proc. SPIE 3333, Enhancement of process latitude by reducing resist thickness for KrF excimer laser lithography, 0000 (29 June 1998); doi: 10.1117/12.312447
Poster Session: ArF Materials
Proc. SPIE 3333, Novel single-layer photoresist containing cycloolefins for 193 nm, 0000 (29 June 1998); doi: 10.1117/12.312449