23RD ANNUAL INTERNATIONAL SYMPOSIUM ON MICROLITHOGRAPHY
22-27 February 1998
Santa Clara, CA, United States
Phase-Shifting Masks
Proc. SPIE 3334, Application of alternating phase-shifting masks to 140-nm gate patterning: II. Mask design and manufacturing tolerances, 0000 (29 June 1998); doi: 10.1117/12.310717
Proc. SPIE 3334, Impact of coma on CD control for multiphase PSM designs, 0000 (29 June 1998); doi: 10.1117/12.310750
Proc. SPIE 3334, 0.18-um optical lithography performances using an alternating DUV phase-shift mask, 0000 (29 June 1998); doi: 10.1117/12.310761
Proc. SPIE 3334, Narrow-pitch contact array patterning technique for Gb DRAM using multi-phase-shifting mask, 0000 (29 June 1998); doi: 10.1117/12.310770
Proc. SPIE 3334, Evaluation of phase-edge phase-shifting mask for sub-0.18-um gate patterns in logic devices, 0000 (29 June 1998); doi: 10.1117/12.310780
CD Control Scanners
Proc. SPIE 3334, CD control comparison of step-and-repeat versus step-and-scan DUV lithography for sub-0.25-um gate printing, 0000 (29 June 1998); doi: 10.1117/12.310789
Proc. SPIE 3334, Effect of stage synchronization error of KrF scan on 0.18-um patterning, 0000 (29 June 1998); doi: 10.1117/12.310802
Proc. SPIE 3334, Intrafield critical dimension variation using KrF scanner system for 0.18-um lithography, 0000 (29 June 1998); doi: 10.1117/12.310813
Mask CD Effects and OPC I
Proc. SPIE 3334, Lithographic effects of mask critical dimension error, 0000 (29 June 1998); doi: 10.1117/12.310718
Proc. SPIE 3334, Lithography of 180-nm design rule for 1-Gb DRAM, 0000 (29 June 1998); doi: 10.1117/12.310727
Proc. SPIE 3334, Reduction of mask-induced CD errors by optical proximity correction, 0000 (29 June 1998); doi: 10.1117/12.310737
Proc. SPIE 3334, Subresolution assist feature and off-axis illumination optimization for 200- and 240-nm contact windows using 248-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.310743
Lithography Modeling
Proc. SPIE 3334, Revalidation of the Rayleigh resolution and DOF limits, 0000 (29 June 1998); doi: 10.1117/12.310744
Proc. SPIE 3334, Quasi-physical model for fast resist contour simulation: importance of lens aberrations and acid diffusion in LSI pattern design, 0000 (29 June 1998); doi: 10.1117/12.310745
Proc. SPIE 3334, Lithographic process simulation for scanners, 0000 (29 June 1998); doi: 10.1117/12.310746
Proc. SPIE 3334, Lithography simulation employing rigorous solutions to Maxwell's equations, 0000 (29 June 1998); doi: 10.1117/12.310747
Proc. SPIE 3334, LAVA: lithography analysis using virtual access, 0000 (29 June 1998); doi: 10.1117/12.310748
OPC II
Proc. SPIE 3334, 0.25-um logic manufacturability using practical 2D optical proximity correction, 0000 (29 June 1998); doi: 10.1117/12.310749
Proc. SPIE 3334, Practical approach to control the full-chip-level gate CD in DUV lithography, 0000 (29 June 1998); doi: 10.1117/12.310751
Proc. SPIE 3334, Accurate proximity correction method with total-process proximity-based correction factor (TCF), 0000 (29 June 1998); doi: 10.1117/12.310752
Proc. SPIE 3334, Applications of enhanced optical proximity correction models, 0000 (29 June 1998); doi: 10.1117/12.310753
Proc. SPIE 3334, Process proximity correction using an automated software tool, 0000 (29 June 1998); doi: 10.1117/12.310754
Image Quality
Proc. SPIE 3334, Optical lens specifications from the user's perspective, 0000 (29 June 1998); doi: 10.1117/12.310755
Proc. SPIE 3334, Aberration evaluation and tolerancing of 193-nm lithographic objective lenses, 0000 (29 June 1998); doi: 10.1117/12.310756
Proc. SPIE 3334, Pupil illumination: in-situ measurement of partial coherence, 0000 (29 June 1998); doi: 10.1117/12.310757
Proc. SPIE 3334, Characterization of spatial coherence uniformity in exposure tools, 0000 (29 June 1998); doi: 10.1117/12.310758
Proc. SPIE 3334, Evaluation of coma aberration in projection lens by various measurements, 0000 (29 June 1998); doi: 10.1117/12.310759
Antireflective Layers
Proc. SPIE 3334, ArF excimer laser lithography with bottom antireflective coating, 0000 (29 June 1998); doi: 10.1117/12.310760
Proc. SPIE 3334, Bottom-ARC optimization methodology for 0.25-um lithography and beyond, 0000 (29 June 1998); doi: 10.1117/12.310762
Proc. SPIE 3334, Inorganic antireflective coating process for deep-UV lithography, 0000 (29 June 1998); doi: 10.1117/12.310763
Proc. SPIE 3334, Influence of underlayer reflection on optical proximity effects in sub-quarter-micron lithography, 0000 (29 June 1998); doi: 10.1117/12.310764
Proc. SPIE 3334, Deep-UV reflection control for patterning dielectric layers, 0000 (29 June 1998); doi: 10.1117/12.310765
Process Optimization and Enhancement Techniques
Proc. SPIE 3334, Simulation and experimental evaluation of double-exposure techniques, 0000 (29 June 1998); doi: 10.1117/12.310766
Proc. SPIE 3334, Illumination pupil filtering using modified quadrupole apertures, 0000 (29 June 1998); doi: 10.1117/12.310767
Proc. SPIE 3334, DUV stability of carbon films for attenuated phase-shift mask applications, 0000 (29 June 1998); doi: 10.1117/12.310768
Advanced Exposure Tools
Proc. SPIE 3334, New projection optical system for beyond 150-nm patterning with KrF and ArF sources, 0000 (29 June 1998); doi: 10.1117/12.310769
Proc. SPIE 3334, Performance of an i-line step-and-scan system for sub-0.25-um mix-and-match applications, 0000 (29 June 1998); doi: 10.1117/12.310771
Proc. SPIE 3334, Imaging performance of scanning exposure systems, 0000 (29 June 1998); doi: 10.1117/12.310772
Proc. SPIE 3334, Characterization of a next-generation step-and-scan system, 0000 (29 June 1998); doi: 10.1117/12.310773
Proc. SPIE 3334, Laser pattern-generation technology below 0.25 um, 0000 (29 June 1998); doi: 10.1117/12.310774
193-nm Issues and Alignment
Proc. SPIE 3334, Assessment of optical coatings for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.310775
Proc. SPIE 3334, Damage testing of pellicles for 193-nm lithography, 0000 (29 June 1998); doi: 10.1117/12.310776
Proc. SPIE 3334, Alignment performance versus mark quality, 0000 (29 June 1998); doi: 10.1117/12.310777
Proc. SPIE 3334, High-accuracy alignment based on subspace decomposition, 0000 (29 June 1998); doi: 10.1117/12.310778
Proc. SPIE 3334, Impacts of reticle and wafer elasticity control on overall alignment management strategy, 0000 (29 June 1998); doi: 10.1117/12.310779
Poster Session I: Enhancement Techniques
Proc. SPIE 3334, Proposal of a composite phase-shifting mask for 0.15-um hole-pattern delineation using KrF exposure, 0000 (29 June 1998); doi: 10.1117/12.310781
Proc. SPIE 3334, Optimization of stepper parameters and its design rule for an attenuated phase-shifting mask, 0000 (29 June 1998); doi: 10.1117/12.310782
Proc. SPIE 3334, Preventing sidelobe printing in applying attenuated phase-shift reticles, 0000 (29 June 1998); doi: 10.1117/12.310783
Proc. SPIE 3334, Resist and oxide thickness effect on process window for 0.2-um contact patterns with off-axis illumination and attenuated phase-shift mask, 0000 (29 June 1998); doi: 10.1117/12.310784
Proc. SPIE 3334, Optimization of DUV photolithography for sub-250-nm technology: contact patterning with attenuated phase-shift mask, 0000 (29 June 1998); doi: 10.1117/12.310785
Proc. SPIE 3334, New method for improving the practical resolution of complex patterns in sub-half-micron lithography, 0000 (29 June 1998); doi: 10.1117/12.310786
Proc. SPIE 3334, Enhanced microlithography using coated objectives and image duplication, 0000 (29 June 1998); doi: 10.1117/12.310787
Proc. SPIE 3334, Printing sub-100-nm random logic patterns using binary masks and synthetic-aperture lithography (SAL), 0000 (29 June 1998); doi: 10.1117/12.310788
Poster Session II: CD Control
Proc. SPIE 3334, Optimization of exposure procedures for sub-quarter-micron CMOS applications, 0000 (29 June 1998); doi: 10.1117/12.310790
Proc. SPIE 3334, CD control of ASIC polysilicon gate level, 0000 (29 June 1998); doi: 10.1117/12.310791
Proc. SPIE 3334, Reticle contributions to CD uniformity for 0.25-um DUV lithography, 0000 (29 June 1998); doi: 10.1117/12.310792