PROCEEDINGS VOLUME 3359
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSTICS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS | 13-15 MAY 1997
Optical Diagnostics of Materials and Devices for Opto-, Micro-, and Quantum Electronics 1997
INTERNATIONAL CONFERENCE ON OPTICAL DIAGNOSTICS OF MATERIALS AND DEVICES FOR OPTO-, MICRO-, AND QUANTUM ELECTRONICS
13-15 May 1997
Kiev, Ukraine
Absorption and Reflection Methods
Proc. SPIE 3359, Monitoring the aging of high-power laser diode arrays, 0000 (20 April 1998); doi: 10.1117/12.306188
Proc. SPIE 3359, Femtosecond evolution of semiconductor microcavity modes, 0000 (20 April 1998); doi: 10.1117/12.306199
Proc. SPIE 3359, Optical characterization of Fe- and Cu-doped SiO2 glasses prepared by the sol-gel method, 0000 (20 April 1998); doi: 10.1117/12.306210
Proc. SPIE 3359, Laser radiation action on c-Si with dislocations and their diagnostics, 0000 (20 April 1998); doi: 10.1117/12.306221
Proc. SPIE 3359, Optical properties of thin Al films studied by ordinary and polariton spectroellipsometry, 0000 (20 April 1998); doi: 10.1117/12.306232
Posters: Absorption and Reflection Methods
Proc. SPIE 3359, Fullerene-embedded Langmuir-Blodgett films probed by spectroscopic ellipsometry, 0000 (20 April 1998); doi: 10.1117/12.306243
Proc. SPIE 3359, Optical properties and structure of porous silicon, 0000 (20 April 1998); doi: 10.1117/12.306254
Proc. SPIE 3359, Aging of elements of the integral optics and light guides, 0000 (20 April 1998); doi: 10.1117/12.306265
Proc. SPIE 3359, Influence of different types of surface treatment on photoelectric and optical properties of CdTe crystals, 0000 (20 April 1998); doi: 10.1117/12.306276
Proc. SPIE 3359, Investigation using MAI ellipsometry of damage by surface metallic doping of near-surface layers in semiconductors, 0000 (20 April 1998); doi: 10.1117/12.306189
Proc. SPIE 3359, Structure and optical parameters of the system with porous silicon: ellipsometric study, 0000 (20 April 1998); doi: 10.1117/12.306190
Proc. SPIE 3359, Effect of lateral inhomogeneity of barrier height on the photoresponse characteristics of Schottky junctions, 0000 (20 April 1998); doi: 10.1117/12.306191
Proc. SPIE 3359, Optical study on microstructure of laser-deposited Si-containing films, 0000 (20 April 1998); doi: 10.1117/12.306192
Proc. SPIE 3359, Absorption diagnostics of quantum size effect on the excited states of SbI3 clusters in FAU zeolite, 0000 (20 April 1998); doi: 10.1117/12.306193
Proc. SPIE 3359, Infrared spectroscopy of luminescent porous silicon, 0000 (20 April 1998); doi: 10.1117/12.306194
Proc. SPIE 3359, IR reflection spectra of the ZnO/Al2O3 structure, 0000 (20 April 1998); doi: 10.1117/12.306195
Proc. SPIE 3359, Optical properties and electron zone structure of AnXO4 single crystals, 0000 (20 April 1998); doi: 10.1117/12.306196
Proc. SPIE 3359, Mechanism of the ZnGa2S4 monolayer formation on an NaCl surface, 0000 (20 April 1998); doi: 10.1117/12.306197
Proc. SPIE 3359, Optical and photoelectrical studies of strain fields in semiconductor crystals, 0000 (20 April 1998); doi: 10.1117/12.306198
Proc. SPIE 3359, Refractivity dispersion in glassy As2S5 for infrared optics, 0000 (20 April 1998); doi: 10.1117/12.306200
Proc. SPIE 3359, Optical methods of control and characterization of materials for infrared detectors, 0000 (20 April 1998); doi: 10.1117/12.306201
Proc. SPIE 3359, Ellipsometric probing of metallic mirrors with modified surfaces, 0000 (20 April 1998); doi: 10.1117/12.306202
Interferometry and Nonlinear Optics Methods
Proc. SPIE 3359, Nonlinear-carrier-transport-governed nonresonant optical nonlinearity in A3B5 crystals, 0000 (20 April 1998); doi: 10.1117/12.306203
Proc. SPIE 3359, Measurement of dispersive properties of optical materials and mirrors using spectrally resolved white-light interferometry, 0000 (20 April 1998); doi: 10.1117/12.306204
Posters: Interferometry and Nonlinear Optics Methods
Proc. SPIE 3359, Random electric fields and coherent phonon excitation in C60 films by femtosecond laser pulses, 0000 (20 April 1998); doi: 10.1117/12.306205
Proc. SPIE 3359, Direct study of nonequilibrium carriers near Fermi level of Au film by optical reflection and transmission in femtosecond scale, 0000 (20 April 1998); doi: 10.1117/12.306206
Proc. SPIE 3359, Adjustment of optical properties of nonlinear composites by an external electrical field, 0000 (20 April 1998); doi: 10.1117/12.306207
Proc. SPIE 3359, Role of growth defects on carrier dynamics: semi-insulating GaAs, 0000 (20 April 1998); doi: 10.1117/12.306208
Luminescent Methods
Proc. SPIE 3359, Visible luminescent Si nanocrystals: optical characterization and application, 0000 (20 April 1998); doi: 10.1117/12.306209
Proc. SPIE 3359, Identification of electron-hole transitions in short-period GaAs/AlAs superlattices by time-resolved photoluminescence, 0000 (20 April 1998); doi: 10.1117/12.306211
Proc. SPIE 3359, Basics of luminescent diagnostics of the dislocation structure of SiC crystals, 0000 (20 April 1998); doi: 10.1117/12.306212
Proc. SPIE 3359, Photoluminescence investigation of Dy incorporation into InP during liquid phase epitaxy, 0000 (20 April 1998); doi: 10.1117/12.306213
Proc. SPIE 3359, Metal-proximity-induced phosphorescence of C60 molecules, 0000 (20 April 1998); doi: 10.1117/12.306214
Proc. SPIE 3359, Effect of disorder on exciton dynamics in cation-substituted ZnxCd1-xS mixed crystals, 0000 (20 April 1998); doi: 10.1117/12.306215
Posters: Luminescent Methods
Proc. SPIE 3359, Luminescent purity diagnostics of ZnSe crystals, 0000 (20 April 1998); doi: 10.1117/12.306216
Proc. SPIE 3359, Light-activated photoluminescence of porous silicon, 0000 (20 April 1998); doi: 10.1117/12.306217
Proc. SPIE 3359, Acousto-stimulated change of the electrical and photoelectrical properties of CdxHg1-xTe (x=0.2) crystals, 0000 (20 April 1998); doi: 10.1117/12.306218
Proc. SPIE 3359, Electroluminescent control technique of dislocation density in GaP, 0000 (20 April 1998); doi: 10.1117/12.306219
Proc. SPIE 3359, Determination of the concentration of shallow impurities in semi-insulating GaAs by low-temperature (77 K) photoluminescence, 0000 (20 April 1998); doi: 10.1117/12.306220
Proc. SPIE 3359, Luminescence method for the determination of the current injection component in red GaAs1-xPx light-emitting diodes, 0000 (20 April 1998); doi: 10.1117/12.306222
Proc. SPIE 3359, Single crystalline imaging plates based on epitaxial and diffusion structures of alkali halide compounds, 0000 (20 April 1998); doi: 10.1117/12.306223
Proc. SPIE 3359, Single crystalline thin film screens for cathode ray tubes: possibilities of application, peculiarities, and light parameters, 0000 (20 April 1998); doi: 10.1117/12.306224
Proc. SPIE 3359, Photoluminescent investigations of SHF irradiation effect on defect states in GaAs:Sn(Te) and InP crystals, 0000 (20 April 1998); doi: 10.1117/12.306225
Proc. SPIE 3359, Short-wave emission of Tb3+ as an optical indicator of TFELS matrix changes, 0000 (20 April 1998); doi: 10.1117/12.306226
Proc. SPIE 3359, Diagnostic of the energy level distribution of tetragonal cadmium and zinc diphosphides, 0000 (20 April 1998); doi: 10.1117/12.306227
Proc. SPIE 3359, Optical diagnostics of light-emitting Si clusters in SiO2 formed by ion implantation, 0000 (20 April 1998); doi: 10.1117/12.306228
Proc. SPIE 3359, Detection of deep boron-involved thermal donor formation in silicon by combined photoluminescent, Hall, and ESR techniques, 0000 (20 April 1998); doi: 10.1117/12.306229
Proc. SPIE 3359, Chlorine-related photoluminescence of CdTe gamma detector material, 0000 (20 April 1998); doi: 10.1117/12.306230
Proc. SPIE 3359, Luminescence of CdSiP2 crystals, 0000 (20 April 1998); doi: 10.1117/12.306231
Proc. SPIE 3359, Luminescence of ZnSe(Te) crystals melt-grown from the charge and enriched in selenium, 0000 (20 April 1998); doi: 10.1117/12.306233
Proc. SPIE 3359, Luminescence of ZnS polycrystals prepared by SSHTS, 0000 (20 April 1998); doi: 10.1117/12.306234
Raman Scattering
Proc. SPIE 3359, Micro-Raman characterization of GaN epilayers, 0000 (20 April 1998); doi: 10.1117/12.306235
Proc. SPIE 3359, Raman spectra and effects of electrical field and stress in DQW AlGaAs lasers, 0000 (20 April 1998); doi: 10.1117/12.306236
Proc. SPIE 3359, Optical characterization of carbon ion implantation into Si and SiGe alloys, 0000 (20 April 1998); doi: 10.1117/12.306237
Proc. SPIE 3359, Thin films for nonlinear optics: sol-gel preparation, Raman and XAS characterization of alpha-Fe2O3, 0000 (20 April 1998); doi: 10.1117/12.306238
Proc. SPIE 3359, Diagnostics of nitrogen-implanted diamond-like carbon films by optical and microhardness measurements, 0000 (20 April 1998); doi: 10.1117/12.306239
Posters: Raman Scattering
Proc. SPIE 3359, Interface roughness and confined LO phonon modes in (ZnSe)2 (ZnS)11/GaAs(100) superlattices grown by PAVPE, 0000 (20 April 1998); doi: 10.1117/12.306240
Proc. SPIE 3359, Raman diagnostics of new types of A3B2X9 layered crystals, 0000 (20 April 1998); doi: 10.1117/12.306241