PROCEEDINGS VOLUME 3413
LASERS AND MATERIALS IN INDUSTRY AND OPTO-CONTACT WORKSHOP | 13-16 JULY 1998
Materials Modification by Ion Irradiation
LASERS AND MATERIALS IN INDUSTRY AND OPTO-CONTACT WORKSHOP
13-16 July 1998
Quebec, Canada
Ion Beam Modification of Polymers
Proc. SPIE 3413, Surface modification of polymers by ionizing radiation: optical and mechanical effects, 0000 (17 September 1998); doi: 10.1117/12.321937
Proc. SPIE 3413, Chemical modifications induced in swift heavy ion-irradiated polymers, 0000 (17 September 1998); doi: 10.1117/12.321948
Proc. SPIE 3413, Electrical and optical behavior of ion-implanted and ion-beam mixed polymers, 0000 (17 September 1998); doi: 10.1117/12.321955
Proc. SPIE 3413, Optical and structural effects of ion implantation in polymer waveguides, 0000 (17 September 1998); doi: 10.1117/12.321957
Proc. SPIE 3413, Modification of wetting properties of glazing by ion beam irradiation, 0000 (17 September 1998); doi: 10.1117/12.321958
Nanoclusters and Nonlinear Optics
Proc. SPIE 3413, Ion beam processing of nanocluster-containing thin films, 0000 (17 September 1998); doi: 10.1117/12.321959
Proc. SPIE 3413, Surface modification of sapphire by ion implantation, 0000 (17 September 1998); doi: 10.1117/12.321960
Proc. SPIE 3413, Relaxation dynamics of silicon quantum dots in silica, 0000 (17 September 1998); doi: 10.1117/12.321961
Proc. SPIE 3413, Ion irradiation of glasses for metal quantum-dot composite formation, 0000 (17 September 1998); doi: 10.1117/12.321962
Proc. SPIE 3413, Nonlinear optical waveguides produced by MeV metal ion-beam implantation of lithium niobate, 0000 (17 September 1998); doi: 10.1117/12.321938
Photonic Integrated Circuits and Quantum Wells
Proc. SPIE 3413, Monolithic integration in III-V semiconductors via a universal damage enhanced quantum well intermixing technique, 0000 (17 September 1998); doi: 10.1117/12.321939
Proc. SPIE 3413, Photonic integrated circuits fabricated using quantum well intermixing, 0000 (17 September 1998); doi: 10.1117/12.321940
Proc. SPIE 3413, Monolithic integration of multiple-emission-wavelength laser diodes using low-energy ion implantation, 0000 (17 September 1998); doi: 10.1117/12.321941
Proc. SPIE 3413, Effect of ion mass on the irradiation-induced intermixing of GaAs/AlGaAs quantum wells, 0000 (17 September 1998); doi: 10.1117/12.321942
Proc. SPIE 3413, Ion implantation: an efficient method for doping or fabricating channel chalcogenide glass waveguides, 0000 (17 September 1998); doi: 10.1117/12.321943
Basic Aspects and New Applications
Proc. SPIE 3413, Surface modification by plasma immersion ion processing, 0000 (17 September 1998); doi: 10.1117/12.321944
Proc. SPIE 3413, MeV ion implantation for modification of electronic, optical, and magnetic materials, 0000 (17 September 1998); doi: 10.1117/12.321945
Proc. SPIE 3413, Radiation damage from single heavy ion impacts on metal surfaces, 0000 (17 September 1998); doi: 10.1117/12.321946
Proc. SPIE 3413, Nitrogen and oxygen ion implantation of aluminum using an electron cyclotron resonance plasma source, 0000 (17 September 1998); doi: 10.1117/12.321947
Proc. SPIE 3413, Characterization of containment and limiter materials, 0000 (17 September 1998); doi: 10.1117/12.321949
Proc. SPIE 3413, Ultrafast electronic processes in highly excited solids: subpicosecond optical studies, 0000 (17 September 1998); doi: 10.1117/12.321950
Posters
Proc. SPIE 3413, Enhanced microhardness of four modern steels following nitrogen ion implantation, 0000 (17 September 1998); doi: 10.1117/12.321951
Proc. SPIE 3413, Effects of ion irradiation on the wetting properties and atomic composition of polycarbonate surface, 0000 (17 September 1998); doi: 10.1117/12.321952
Proc. SPIE 3413, Thin interference films for nonlineal crystals, 0000 (17 September 1998); doi: 10.1117/12.321953
Proc. SPIE 3413, Laser-strength mirrors for high-power NIR-region solid state lasers, 0000 (17 September 1998); doi: 10.1117/12.321954
Basic Aspects and New Applications
Proc. SPIE 3413, Gallium vacancy production in carbon, oxygen, and arsenic irradiated n-type gallium arsenide, 0000 (17 September 1998); doi: 10.1117/12.321956
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