PROCEEDINGS VOLUME 3419
ASIA PACIFIC SYMPOSIUM ON OPTOELECTRONICS '98 | 9-11 JULY 1998
Optoelectronic Materials and Devices
ASIA PACIFIC SYMPOSIUM ON OPTOELECTRONICS '98
9-11 July 1998
Taipei, Taiwan
Wide-Bandgap Group-III Nitride Materials
Proc. SPIE 3419, Growth shape control of group-III nitrides by selective-area MOVPE, 341901 (22 June 1998); doi: 10.1117/12.310989
Proc. SPIE 3419, Epitaxial lateral overgrowth of GaN by the sublimation method and by MOCVD, 341902 (22 June 1998); doi: 10.1117/12.311000
Proc. SPIE 3419, Homoepitaxial growth of InGaN/GaN double-heterostructure light-emitting diode by low-pressure MOCVD, 341903 (22 June 1998); doi: 10.1117/12.311009
Proc. SPIE 3419, Growth of high-quality cubic GaN on (001) GaAs by halide VPE with backside buffer, 341904 (22 June 1998); doi: 10.1117/12.311019
Proc. SPIE 3419, Phonon-assisted photoluminescence in wurtzite GaN epilayer, 341905 (22 June 1998); doi: 10.1117/12.311027
Proc. SPIE 3419, High-temperature stimulated emission studies of MOCVD-grown GaN films, 341906 (22 June 1998); doi: 10.1117/12.311036
Short-Wavelength Light Emitters and Optical Properties of Wide-Bandgap Materials
Proc. SPIE 3419, MOCVD growth of AlGaN UV LEDs, 341907 (22 June 1998); doi: 10.1117/12.311042
Proc. SPIE 3419, Comparison of the optical gain of wurtzite GaN/AlGaN quantum well lasers grown on (0001)- and (1010)-oriented substrates, 341908 (22 June 1998); doi: 10.1117/12.310990
Proc. SPIE 3419, Large optical nonlinearities in the bandgap region of GaN thin films grown by MOCVD on sapphire, 341909 (22 June 1998); doi: 10.1117/12.310991
Manufacturing Issues
Proc. SPIE 3419, MOCVD technology for the production of highly efficient GaAlP/GaAs/Ge solar cells, 34190A (22 June 1998); doi: 10.1117/12.310992
Proc. SPIE 3419, Ga2O3(Gd2O3) as a dielectric insulator for GaAs device applications, 34190B (22 June 1998); doi: 10.1117/12.310993
Proc. SPIE 3419, MPACVD processing technologies for planar integrated optics, 34190C (22 June 1998); doi: 10.1117/12.310994
Proc. SPIE 3419, Finite element analysis of thermal stresses in laser packaging, 34190D (22 June 1998); doi: 10.1117/12.310995
Proc. SPIE 3419, Fiber alignment shift in temperature cycling test, 34190E (22 June 1998); doi: 10.1117/12.310996
Red Diode Lasers
Proc. SPIE 3419, Laser diode for DVD pickup head, 34190F (22 June 1998); doi: 10.1117/12.310997
Proc. SPIE 3419, Characteristics of AlGaInP/InGaP broad-area laser diodes, 34190G (22 June 1998); doi: 10.1117/12.310998
Proc. SPIE 3419, 650-nm GaInP/AlGaInP visible laser diode with buried tapered-ridge structure, 34190H (22 June 1998); doi: 10.1117/12.310999
Proc. SPIE 3419, High-temperature operation of 650-nm AlGaInP quantum well laser diodes grown by LP-MOCVD, 34190I (22 June 1998); doi: 10.1117/12.311001
Advanced Characterization of Optoelectronic Materials
Proc. SPIE 3419, Correlation between dislocations and luminescence in GaN, 34190J (22 June 1998); doi: 10.1117/12.311002
Proc. SPIE 3419, Conduction-band mass determinations for n-type InGaAs/InAlAs single quantum wells, 34190K (22 June 1998); doi: 10.1117/12.311003
Proc. SPIE 3419, Characterization of heavy masses of two-dimensional conduction subband in InGaAs/InAlAs MQW structures by pulsed cyclotron resonance technology, 34190L (22 June 1998); doi: 10.1117/12.311004
Proc. SPIE 3419, Temperature-dependence photoreflectance study of InAs/GaAs self-assembled quantum dots, 34190M (22 June 1998); doi: 10.1117/12.311005
Proc. SPIE 3419, Formation of high-performance PtSi/p-Si Schottky barrier detector using high-resolution transmission electron microscope, 34190N (22 June 1998); doi: 10.1117/12.311006
Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3419, Surface-emitting lasers for parallel data transmission and data storage, 34190O (22 June 1998); doi: 10.1117/12.311007
Proc. SPIE 3419, Progress in high-power VCSELs and arrays, 34190P (22 June 1998); doi: 10.1117/12.311008
Proc. SPIE 3419, Three-dimensional simulation of oxide-confined vertical-cavity surface-emitting semiconductor lasers, 34190Q (22 June 1998); doi: 10.1117/12.311010
Proc. SPIE 3419, Measurement of resonant-mode blueshifts in quantum-dot vertical-cavity surface-emitting lasers, 34190R (22 June 1998); doi: 10.1117/12.311011
MEMS and Photodetectors
Proc. SPIE 3419, Surface micromachined devices for microwave and photonic applications, 34190S (22 June 1998); doi: 10.1117/12.311012
Proc. SPIE 3419, Two-dimensional micro-optical scanner excited by PZT thin-film microactuator, 34190T (22 June 1998); doi: 10.1117/12.311013
Proc. SPIE 3419, Performance evaluation of a lead-titanate (PbTiO3) pyroelectric thin-film infrared sensor with temperature isolation improvement structure by microelectromechanical system (MEMS) technologies, 34190U (22 June 1998); doi: 10.1117/12.311014
Proc. SPIE 3419, Sofradir IR detectors: today and tomorrow, 34190V (22 June 1998); doi: 10.1117/12.311015
Proc. SPIE 3419, Dark current mechanisms in HgCdTe photodiodes, 34190W (22 June 1998); doi: 10.1117/12.311016
Novel Optoelectronic Materials and Devices
Proc. SPIE 3419, High-power and high-efficiency mid-infrared type-II quantum well and interband cascade lasers, 34190Y (22 June 1998); doi: 10.1117/12.311018
Proc. SPIE 3419, High-speed plastic optical fibers and amplifiers, 34190Z (22 June 1998); doi: 10.1117/12.311020
Proc. SPIE 3419, Antimonide-based interdiffused quantum wells, 341910 (22 June 1998); doi: 10.1117/12.311021
Poster Session
Proc. SPIE 3419, Theoretical model for studying hot phonon effects and electron energy relaxation in GaN: the roles of A1-mode and E1-mode optical phonons, 341911 (22 June 1998); doi: 10.1117/12.311022
Proc. SPIE 3419, Band structure of interdiffused InGaN/GaN quantum wells, 341912 (22 June 1998); doi: 10.1117/12.311023
Proc. SPIE 3419, Near-band-edge optical properties of MBE-grown ZnSe epilayers on GaAs by modulation spectroscopy, 341913 (22 June 1998); doi: 10.1117/12.311024
Proc. SPIE 3419, Experimental Luttinger parameter determination by confined states in InGaAs/InAlAs multiple quantum well structures, 341914 (22 June 1998); doi: 10.1117/12.311025
Proc. SPIE 3419, Formation mechanism of defects in annealed InP, 341915 (22 June 1998); doi: 10.1117/12.311026
Proc. SPIE 3419, Ion beam synthesis of beta-FeSi2 as an IR photosensitive material, 341916 (22 June 1998); doi: 10.1117/12.311028
Proc. SPIE 3419, Light-emitting devices made of Langmuir-Blodgett-deposited poly(3-hexadecylthiophene), 341917 (22 June 1998); doi: 10.1117/12.311029
Proc. SPIE 3419, Carrier distribution in asymmetric dual quantum wells, 341918 (22 June 1998); doi: 10.1117/12.311030
Proc. SPIE 3419, MBE-grown high-efficiency 808-nm laser diodes, 341919 (22 June 1998); doi: 10.1117/12.311031
Proc. SPIE 3419, Improved output beam quality using a hyperbolically flared semiconductor laser amplifier, 34191A (22 June 1998); doi: 10.1117/12.311032
Proc. SPIE 3419, Theoretical characterization of feedback-induced noise in a self-sustained pulsation laser, 34191B (22 June 1998); doi: 10.1117/12.311033
Proc. SPIE 3419, Thermal modeling in semiconductor lasers by incorporating the effects of carrier heating, nonequilibrium optical phonons, and thermal conduction of acoustic phonons, 34191C (22 June 1998); doi: 10.1117/12.311034
Proc. SPIE 3419, Precise automatic alignment of a pinhole integrated with photodiodes, 34191D (22 June 1998); doi: 10.1117/12.311035
Proc. SPIE 3419, Silicon-based integrated Mach-Zehnder interferometer with acousto-optic modulation: a biosensor application, 34191E (22 June 1998); doi: 10.1117/12.311037
Proc. SPIE 3419, Efficiency limit of multilevel spatially quantized Fourier-plane diffractive optical elements, 34191F (22 June 1998); doi: 10.1117/12.311038
Proc. SPIE 3419, Implementation of a holographic optical memory system using a new input and angular multiplexing method, 34191G (22 June 1998); doi: 10.1117/12.311039
Proc. SPIE 3419, Optical Bayan network using layered thermally fixed holograms in a photorefractive LiNbO3 crystal, 34191H (22 June 1998); doi: 10.1117/12.311040
Proc. SPIE 3419, Photorefractive two-beam coupling of time-modulated optical signals in Cu-KNSBN crystals, 34191I (22 June 1998); doi: 10.1117/12.311041
Back to Top