PROCEEDINGS VOLUME 3507
MICROELECTRONIC MANUFACTURING | 20-24 SEPTEMBER 1998
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing IV
MICROELECTRONIC MANUFACTURING
20-24 September 1998
Santa Clara, CA, United States
Real-Time and Run-to-Run Modeling and Control in Integrated Circuit Manufacturing
Proc. SPIE 3507, Methodology for real-time feedback variable selection for manufacturing process control: theoretical and simulation results, 0000 (3 September 1998); doi: 10.1117/12.324332
Proc. SPIE 3507, Fast-ramp rapid vertical processor for 300-mm Si wafer processing, 0000 (3 September 1998); doi: 10.1117/12.324342
Proc. SPIE 3507, Development and testing of an active platen for IC manufacturing, 0000 (3 September 1998); doi: 10.1117/12.324353
Proc. SPIE 3507, Multivariate run-to-run control of arm-to-arm variations in chemical mechanical planarization, 0000 (3 September 1998); doi: 10.1117/12.324360
Proc. SPIE 3507, Feedforward recipe selection control design software, 0000 (3 September 1998); doi: 10.1117/12.324363
Proc. SPIE 3507, More-effective troubleshooting using data collection on etch equipment: case studies, 0000 (3 September 1998); doi: 10.1117/12.324364
Proc. SPIE 3507, Monitoring of a RTA process using multi-PCA, 0000 (3 September 1998); doi: 10.1117/12.324365
Proc. SPIE 3507, Dynamic gas chemistry simulator for vacuum systems, 0000 (3 September 1998); doi: 10.1117/12.324366
Proc. SPIE 3507, Chemical rate model for the surface pyrolysis of tetrakis(dimethylamido)titanium to form titanium nitride films, 0000 (3 September 1998); doi: 10.1117/12.324367
Process Optimization in Integrated Circuit Manufacturing
Proc. SPIE 3507, Mechanism for QBD failure in poly gates, 0000 (3 September 1998); doi: 10.1117/12.324333
Proc. SPIE 3507, Plasma etching of aluminum copper tungsten on titanium nitride and titanium, 0000 (3 September 1998); doi: 10.1117/12.324334
Proc. SPIE 3507, Influence of topographical variations on reliable via and contact formation, 0000 (3 September 1998); doi: 10.1117/12.324335
Proc. SPIE 3507, Flat-type metal residue-induced metal line bridge, 0000 (3 September 1998); doi: 10.1117/12.324336
Proc. SPIE 3507, SVG 8800 photoresist coater uniformity improvement using Shipley resist 3010, 0000 (3 September 1998); doi: 10.1117/12.324337
Proc. SPIE 3507, Etch characteristics of Ti in Cl2/N2 and TiN in Cl2/N2/BCl3 plasmas by response surface methodology, 0000 (3 September 1998); doi: 10.1117/12.324338
Proc. SPIE 3507, Influence of floating gate tungsten polycide deposition technique on EEPROM electrical characteristics, 0000 (3 September 1998); doi: 10.1117/12.324339
Proc. SPIE 3507, Isotropic nitride etching for thin nitride barrier self-aligned contact (TNBSAC) in an inductively coupled plasma chemical etcher, 0000 (3 September 1998); doi: 10.1117/12.324340
Sensors, Monitors, and Metrology in Integrated Circuit Manufacturing
Proc. SPIE 3507, Thermalization process in sputtering systems by atomic absorption spectroscopy, 0000 (3 September 1998); doi: 10.1117/12.324341
Proc. SPIE 3507, Application of backside fiber optic system for in-situ CMP endpoint detection on shallow-trench isolation wafers, 0000 (3 September 1998); doi: 10.1117/12.324343
Proc. SPIE 3507, Real-time spectroscopic reflectometer for end-point detection on multichamber deposition processes, 0000 (3 September 1998); doi: 10.1117/12.324348
Proc. SPIE 3507, Developments in focused ion beam metrology, 0000 (3 September 1998); doi: 10.1117/12.324349
Proc. SPIE 3507, Technological sensors on slow electromagnetic waves, 0000 (3 September 1998); doi: 10.1117/12.324350
Proc. SPIE 3507, Real-time detection of chamber condition by observing the plasma spectrum intensity, 0000 (3 September 1998); doi: 10.1117/12.324351
Poster Session
Proc. SPIE 3507, Magnetoresistance of heterophase materials at high pressures, 0000 (3 September 1998); doi: 10.1117/12.324352
Sensors, Monitors, and Metrology in Integrated Circuit Manufacturing
Proc. SPIE 3507, HECTOR: transnanometer Z-axis calibration artifacts for semiconductor process control, 0000 (3 September 1998); doi: 10.1117/12.324354
Poster Session
Proc. SPIE 3507, Polyimide defect reduction, 0000 (3 September 1998); doi: 10.1117/12.324355
Proc. SPIE 3507, Novel method to eliminate SOG-etching-back-induced random particle, 0000 (3 September 1998); doi: 10.1117/12.324356
Proc. SPIE 3507, Analysis of the generation of the misfit dislocations during the boron prediffusion in silicon, 0000 (3 September 1998); doi: 10.1117/12.324357
Proc. SPIE 3507, SOPRA SE3000: a new tool for high-accuracy characterization of multilayer structures on very small spot size, 0000 (3 September 1998); doi: 10.1117/12.324358
Proc. SPIE 3507, Stepper NA/PC optimization DOE for i-line masking, 0000 (3 September 1998); doi: 10.1117/12.324359
Proc. SPIE 3507, Development of consolidated in-situ metallization processes for enhanced productivity, 0000 (3 September 1998); doi: 10.1117/12.324361
Proc. SPIE 3507, Resolving localized oxide breakthrough during poly etch of nonvolatile floating gate structures, 0000 (3 September 1998); doi: 10.1117/12.324362
Plenary Papers
Proc. SPIE 3507, Microprocessor technology challenges through the next decade, 0000 (3 September 1998); doi: 10.1117/12.324344
Proc. SPIE 3507, Copper chip technology, 0000 (3 September 1998); doi: 10.1117/12.324345
Proc. SPIE 3507, Foundry technology trend, 0000 (3 September 1998); doi: 10.1117/12.324346
Proc. SPIE 3507, Equipment challenges for a total material system change: enabling device manufacturing at 130 nm and below, 0000 (3 September 1998); doi: 10.1117/12.324347
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