PROCEEDINGS VOLUME 3509
MICROELECTRONIC MANUFACTURING | 20-24 SEPTEMBER 1998
In-Line Characterization Techniques for Performance and Yield Enhancement in Microelectronic Manufacturing II
MICROELECTRONIC MANUFACTURING
20-24 September 1998
Santa Clara, CA, United States
Electrical/Field Emission Techniques
Proc. SPIE 3509, Value added with in-line electrical characterization: fact or fiction?, 0000 (27 August 1998); doi: 10.1117/12.324396
Proc. SPIE 3509, Correlating EEPROM end-of-line measurements with PDM in-line charging monitoring for ion implantation, 0000 (27 August 1998); doi: 10.1117/12.324405
Proc. SPIE 3509, Scanning capacitance microscope, an in-line nondestructive technique for SiO2 characterization, 0000 (27 August 1998); doi: 10.1117/12.324418
Proc. SPIE 3509, Scanning auger microscopy studies of microelectronic features, 0000 (27 August 1998); doi: 10.1117/12.324419
Optical and EM-Wave Techniques
Proc. SPIE 3509, Enhanced defect detection capability using combined brightfield/darkfield imaging, 0000 (27 August 1998); doi: 10.1117/12.324420
Proc. SPIE 3509, Silicon wafer subsurface characterization with blue-laser/microwave and UV-laser/millimeter-wave photoconductivity techniques, 0000 (27 August 1998); doi: 10.1117/12.324421
Proc. SPIE 3509, Compact FTIR wafer-state sensors: a new way of in-line ULSI characterization, 0000 (27 August 1998); doi: 10.1117/12.324422
Proc. SPIE 3509, Optical fiber profilometer with submicronic accuracy, 0000 (27 August 1998); doi: 10.1117/12.324423
Proc. SPIE 3509, In-line x-ray fluorescence metrology of metals and ultrathin barrier layers for ULSI applications, 0000 (27 August 1998); doi: 10.1117/12.324424
Surface Photovoltage Techniques I
Proc. SPIE 3509, Basic approaches for metal-induced oxide charge on silicon wafer surfaces studied by AC surface photovoltage techniques, 0000 (27 August 1998); doi: 10.1117/12.324397
Proc. SPIE 3509, Noncontact COS charge analysis for in-line monitoring of wet cleaning processes, 0000 (27 August 1998); doi: 10.1117/12.324398
Proc. SPIE 3509, Noncontact surface potential measurements for charging reduction during TEOS deposition and ion implantation, 0000 (27 August 1998); doi: 10.1117/12.324399
Surface Photovoltage Techniques II
Proc. SPIE 3509, Contact potential difference methods for full wafer characterization of Si/SiO2 interface defects induced by plasma processing, 0000 (27 August 1998); doi: 10.1117/12.324400
Proc. SPIE 3509, Comparison study of lifetime measurement techniques, 0000 (27 August 1998); doi: 10.1117/12.324401
Proc. SPIE 3509, Plasma damage monitoring for PECVD deposition: a contact potential difference study and device yield analysis, 0000 (27 August 1998); doi: 10.1117/12.324402
Proc. SPIE 3509, Phosphorous-outgassing-induced threshold voltage in p-channel power MOSFET devices, 0000 (27 August 1998); doi: 10.1117/12.324403
Computational Techniques
Proc. SPIE 3509, Metal layer process characterization: statistical and computational methods for handling, interpreting, and reacting to inline critical dimension information, 0000 (27 August 1998); doi: 10.1117/12.324404
Proc. SPIE 3509, In-line inspection optimization using a yield management system, 0000 (27 August 1998); doi: 10.1117/12.324406
Proc. SPIE 3509, Novel method to quantify defect-limited yield loss mechanisms on a mixed-mode analog/digital process, 0000 (27 August 1998); doi: 10.1117/12.324411
Proc. SPIE 3509, Strategy for a flexible and inexpensive defect density line monitoring for microchip manufacturing, 0000 (27 August 1998); doi: 10.1117/12.324412
Novel Techniques and Applications
Proc. SPIE 3509, Locating defects on wafers for analysis by SEM/EDX, AFM, and other microanalysis techniques, 0000 (27 August 1998); doi: 10.1117/12.324413
Proc. SPIE 3509, Characterization and control of the laser microsoldering process for solid solder deposits using pyrometry, 0000 (27 August 1998); doi: 10.1117/12.324414
Proc. SPIE 3509, TOF-SIMS: a tool for material characterization, process control, and improvement in a wafer fab, 0000 (27 August 1998); doi: 10.1117/12.324415
Proc. SPIE 3509, Technique to analyze large-area surface roughness of a wafer using TXRF, 0000 (27 August 1998); doi: 10.1117/12.324416
Proc. SPIE 3509, Investigation of rod-like defects in MOS 12, 0000 (27 August 1998); doi: 10.1117/12.324417
Electrical/Field Emission Techniques
Proc. SPIE 3509, Microprocessor technology challenges through the next decade, 0000 (27 August 1998); doi: 10.1117/12.324407
Proc. SPIE 3509, Copper chip technology, 0000 (27 August 1998); doi: 10.1117/12.324408
Proc. SPIE 3509, Foundry technology trend, 0000 (27 August 1998); doi: 10.1117/12.324409
Proc. SPIE 3509, Equipment challenges for a total material system change: enabling device manufacturing at 130 nm and below, 0000 (27 August 1998); doi: 10.1117/12.324410
Back to Top