PROCEEDINGS VOLUME 3510
MICROELECTRONIC MANUFACTURING | 20-24 SEPTEMBER 1998
Microelectronic Manufacturing Yield, Reliability, and Failure Analysis IV
IN THIS VOLUME

0 Sessions, 28 Papers, 0 Presentations
Simulation  (3)
MICROELECTRONIC MANUFACTURING
20-24 September 1998
Santa Clara, CA, United States
Advanced Failure Analysis I
Proc. SPIE 3510, Shorter failure analysis using a new application of IDDQ for defect localization in ICs, 0000 (28 August 1998); doi: 10.1117/12.324368
Proc. SPIE 3510, Fault diagnosis of CMOS LSI with various leakage current state using abnormal IDDQ phenomenon, 0000 (28 August 1998); doi: 10.1117/12.324376
Proc. SPIE 3510, Improving yield and reliability of FIB modifications using electrical testing, 0000 (28 August 1998); doi: 10.1117/12.324391
Proc. SPIE 3510, Recognition of defects of the surfscan installation TENCOR 7600 depending on the situation and size of the defect, 0000 (28 August 1998); doi: 10.1117/12.324392
Simulation
Proc. SPIE 3510, Characterization of snap-back breakdown and its temperature dependence up to 300 degrees C including circuit-level model and simulation, 0000 (28 August 1998); doi: 10.1117/12.324393
Proc. SPIE 3510, Photolithography expert system for improved estimation of IC critical area, 0000 (28 August 1998); doi: 10.1117/12.324394
Proc. SPIE 3510, Proximity effect correction for clock-rate maximization, 0000 (28 August 1998); doi: 10.1117/12.324395
Packaging-Related Reliability Issues
Yield, Modeling, Statistics
Proc. SPIE 3510, Implementation of a standardized 0.35-um WLR test vehicle, 0000 (28 August 1998); doi: 10.1117/12.324371
Proc. SPIE 3510, Yield improvement via automatic analysis of wafer-processing order, 0000 (28 August 1998); doi: 10.1117/12.324372
Proc. SPIE 3510, SPRT for Weibull distributed integrated circuit failures, 0000 (28 August 1998); doi: 10.1117/12.324373
Advanced Failure Analysis II
Proc. SPIE 3510, Influence of silicon surface integrity on device yield, 0000 (28 August 1998); doi: 10.1117/12.324374
Proc. SPIE 3510, Yield issues with local interconnect, 0000 (28 August 1998); doi: 10.1117/12.324375
Proc. SPIE 3510, Metal-induced oxide degradation studied by surface photovoltage and mercury-probe measurements, 0000 (28 August 1998); doi: 10.1117/12.324377
Proc. SPIE 3510, Yield-modeling accuracy requirements for 300-mm processing, 0000 (28 August 1998); doi: 10.1117/12.324382
Poster Session
Proc. SPIE 3510, Bad vias are the cause for electrical test yield losses after plastic chip assembly, 0000 (28 August 1998); doi: 10.1117/12.324383
Proc. SPIE 3510, Accurate determination of the hydrogen concentration of silicon nitride layers by Fourier transform spectroscopy, 0000 (28 August 1998); doi: 10.1117/12.324384
Proc. SPIE 3510, Failure modes in microelectronic packages, 0000 (28 August 1998); doi: 10.1117/12.324385
Proc. SPIE 3510, Probe microloading effect of in-situ etch in EPROM stack-gate process, 0000 (28 August 1998); doi: 10.1117/12.324386
Proc. SPIE 3510, Enhanced hot-carrier-induced degradation of 0.25-um P-MOSFETs with oxide/nitride composite spacer compared to those with oxide spacer, 0000 (28 August 1998); doi: 10.1117/12.324387
Packaging-Related Reliability Issues
Poster Session
Proc. SPIE 3510, Simulation of charging voltages on a wafer during plasma etch, 0000 (28 August 1998); doi: 10.1117/12.324389
Proc. SPIE 3510, Effect of different barrier materials on antifuse performance, 0000 (28 August 1998); doi: 10.1117/12.324390
Advanced Failure Analysis I
Proc. SPIE 3510, Microprocessor technology challenges through the next decade, 0000 (28 August 1998); doi: 10.1117/12.324378
Proc. SPIE 3510, Copper chip technology, 0000 (28 August 1998); doi: 10.1117/12.324379
Proc. SPIE 3510, Foundry technology trend, 0000 (28 August 1998); doi: 10.1117/12.324380
Proc. SPIE 3510, Equipment challenges for a total material system change: enabling device manufacturing at 130 nm and below, 0000 (28 August 1998); doi: 10.1117/12.324381
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