18TH ANNUAL BACUS SYMPOSIUM ON PHOTOMASK TECHNOLOGY AND MANAGEMENT
16-18 September 1998
Redwood City, CA, United States
Photomask Patterning
Proc. SPIE 3546, Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000, 0000 (18 December 1998); doi: 10.1117/12.332813
Proc. SPIE 3546, Development of a next-generation e-beam lithography system, 0000 (18 December 1998); doi: 10.1117/12.332823
Proc. SPIE 3546, Evaluation of the practical use of GHOST technique for various e-beam resists, 0000 (18 December 1998); doi: 10.1117/12.332834
Proc. SPIE 3546, Assessment of corner-rounding improvement by automatic software correction on laser pattern generator manufactured photomasks, 0000 (18 December 1998); doi: 10.1117/12.332844
Proc. SPIE 3546, New MEBES pattern generator, 0000 (18 December 1998); doi: 10.1117/12.332854
Overview Presentation
Proc. SPIE 3546, 1998 mask industry quality assessment, 0000 (18 December 1998); doi: 10.1117/12.332863
Resist, Materials, and Processes
Proc. SPIE 3546, Inductively coupled plasma etch of DUV MoSi photomasks: a designed study of etch chemistries and process results, 0000 (18 December 1998); doi: 10.1117/12.332879
Proc. SPIE 3546, 180-nm mask fabrication process using ZEP 7000, multipass gray, GHOST, and dry etch for MEBES 5000, 0000 (18 December 1998); doi: 10.1117/12.332814
Defects, Inspection, and Repair
Proc. SPIE 3546, High-resolution near-field mask repair with femtosecond laser, 0000 (18 December 1998); doi: 10.1117/12.332815
Proc. SPIE 3546, MoSi PSM defect inspection and sensitivity analysis, 0000 (18 December 1998); doi: 10.1117/12.332816
Proc. SPIE 3546, Use of KLA-Tencor STARlight SL 300 for in-process contamination inspection to control reticle defect densities, 0000 (18 December 1998); doi: 10.1117/12.332817
Proc. SPIE 3546, Size matters: defect detectability in reticle and wafer inspection including advanced aerial image simulation for defect printability, 0000 (18 December 1998); doi: 10.1117/12.332818
Mask Metrology
Proc. SPIE 3546, Detecting CD error or transmission error of photomask patterns, 0000 (18 December 1998); doi: 10.1117/12.332819
Proc. SPIE 3546, Compatibility of CD-SEM metrology with advanced e-beam resists, 0000 (18 December 1998); doi: 10.1117/12.332820
Proc. SPIE 3546, LWM 200 CD metrology tool evaluation, 0000 (18 December 1998); doi: 10.1117/12.332821
Proc. SPIE 3546, Pellicle-induced reticle distortion: an experimental investigation, 0000 (18 December 1998); doi: 10.1117/12.332822
Proc. SPIE 3546, Submicron optical CD metrology on photomasks, 0000 (18 December 1998); doi: 10.1117/12.332824
Advanced Mask Technology
Proc. SPIE 3546, Masks for extreme ultraviolet lithography, 0000 (18 December 1998); doi: 10.1117/12.332826
Proc. SPIE 3546, Stencil mask technology for ion beam lithography, 0000 (18 December 1998); doi: 10.1117/12.332827
Proc. SPIE 3546, EUV mask absorber defect repair with focused ion beam, 0000 (18 December 1998); doi: 10.1117/12.332828
Proc. SPIE 3546, Effects of material properties on patterning distortions of optical reticles, 0000 (18 December 1998); doi: 10.1117/12.332829
Resolution Enhancement Techniques
Proc. SPIE 3546, Automated layout and phase assignment techniques for dark-field alternating PSM, 0000 (18 December 1998); doi: 10.1117/12.332830
Proc. SPIE 3546, Mask specifications and OPC, 0000 (18 December 1998); doi: 10.1117/12.332831
Proc. SPIE 3546, Comparison of single- and dual-exposure phase-shift mask approaches for polygate patterning, 0000 (18 December 1998); doi: 10.1117/12.332832
Proc. SPIE 3546, Phase controllability improvement for alternating phase shift mask, 0000 (18 December 1998); doi: 10.1117/12.332833
Proc. SPIE 3546, Inspection of OPC reticle for 0.18-um-rule devices, 0000 (18 December 1998); doi: 10.1117/12.332835
BACUS '98 Special Focus Program on Mask Technology and the 1998 National Technology Roadmap for Semiconductors
Proc. SPIE 3546, SIA Roadmap: impact on the lithography foodchain (Presentation Only), 0000 (18 December 1998); doi: 10.1117/12.332836
Proc. SPIE 3546, Assessment of a hypothetical roadmap that extends optical lithography through the 70-nm technology node, 0000 (18 December 1998); doi: 10.1117/12.332837
Proc. SPIE 3546, Optical proximity correction for 0.15-um-rule memory devices, 0000 (18 December 1998); doi: 10.1117/12.332838
Proc. SPIE 3546, Some challenges for mask making to keep up with the roadmap, 0000 (18 December 1998); doi: 10.1117/12.332839
Proc. SPIE 3546, In the year 2525, if x ray is still alive, if lithography can survive, they may find..., 0000 (18 December 1998); doi: 10.1117/12.332840
Proc. SPIE 3546, Issues on mask technologies: 0.18-um and beyond, 0000 (18 December 1998); doi: 10.1117/12.332841
Proc. SPIE 3546, Accuracy differences among photomask metrology tools and why they matter, 0000 (18 December 1998); doi: 10.1117/12.332842
Proc. SPIE 3546, Gaps in mask technology with respect to the National Technology Roadmap for Semiconductors, 0000 (18 December 1998); doi: 10.1117/12.332843
Poster Session: Resist, Materials, and Processes
Proc. SPIE 3546, High-contrast positive resists for e-beam mask making, 0000 (18 December 1998); doi: 10.1117/12.332845
Poster Session: Resolution Enhancement Techniques (OPC/PSM)
Proc. SPIE 3546, Characterization of OPC masks for thin-film head pole trimming applications, 0000 (18 December 1998); doi: 10.1117/12.332846
Proc. SPIE 3546, Full-chip optical proximity correction using lithography simulation, 0000 (18 December 1998); doi: 10.1117/12.332847
Poster Session: Defects, Inspection, and Repair
Proc. SPIE 3546, Advanced mask cleaning for 0.20-um technology: an integrated user-supplier approach, 0000 (18 December 1998); doi: 10.1117/12.332848
Poster Session: Resist, Materials, and Processes
Proc. SPIE 3546, Pellicle transmission uniformity requirements, 0000 (18 December 1998); doi: 10.1117/12.332849
Poster Session: Defects, Inspection, and Repair
Proc. SPIE 3546, Defect inspection capability for advanced OPC photomasks, 0000 (18 December 1998); doi: 10.1117/12.332850
Poster Session: Mask Metrology
Proc. SPIE 3546, The AIMS tool: its potentials, applications, and issues, 0000 (18 December 1998); doi: 10.1117/12.332851
Poster Session: Resist, Materials, and Processes
Proc. SPIE 3546, Mechanical distortions in advanced photomasks, 0000 (18 December 1998); doi: 10.1117/12.332852
Poster Session: Mask Metrology
Proc. SPIE 3546, Stage Cartesian self-calibration: a second method, 0000 (18 December 1998); doi: 10.1117/12.332853
Poster Session: Photomask Patterning
Proc. SPIE 3546, Half-multiphase printing: a proposed throughput improvement on MEBES 4500, 0000 (18 December 1998); doi: 10.1117/12.332855
Poster Session: Resolution Enhancement Techniques (OPC/PSM)
Poster Session: Advanced Mask Technology
Proc. SPIE 3546, TiSi-nitride attenuating phase-shift photomask for 193-nm lithography, 0000 (18 December 1998); doi: 10.1117/12.332857
Poster Session: Resolution Enhancement Techniques (OPC/PSM)
Proc. SPIE 3546, Resolution limits with 248-nm strong phase-shifting techniques for contact patterning applications, 0000 (18 December 1998); doi: 10.1117/12.332858
Proc. SPIE 3546, Design and analysis of manufacturable alternating phase-shifting masks, 0000 (18 December 1998); doi: 10.1117/12.332859
Poster Session: Resist, Materials, and Processes
Proc. SPIE 3546, DUV pellicle quality assessment based on customer priorities, 0000 (18 December 1998); doi: 10.1117/12.332860
Poster Session: Resolution Enhancement Techniques (OPC/PSM)
Proc. SPIE 3546, Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask through simulation I, 0000 (18 December 1998); doi: 10.1117/12.332861
Proc. SPIE 3546, Effect of reticle CD uniformity on wafer CD uniformity in the presence of scattering-bar optical proximity correction, 0000 (18 December 1998); doi: 10.1117/12.332862
Poster Session: Resist, Materials, and Processes
Proc. SPIE 3546, Impact of the loading effect on CD control in plasma etching of Cr photomasks using ZEP 7000 resist, 0000 (18 December 1998); doi: 10.1117/12.332864
Poster Session: Advanced Mask Technology
Proc. SPIE 3546, Actinic detection of EUVL mask blank defects, 0000 (18 December 1998); doi: 10.1117/12.332865
Proc. SPIE 3546, Process margin in ArF lithography using an alternating phase-shifting mask, 0000 (18 December 1998); doi: 10.1117/12.332866
Poster Session: Resolution Enhancement Techniques (OPC/PSM)
Proc. SPIE 3546, Method to determine printability of photomask defects and its use in phase-shift mask evaluations, 0000 (18 December 1998); doi: 10.1117/12.332867
Poster Session: Mask Metrology
Proc. SPIE 3546, CD guarantee for the next-generation photomasks with CD-SEM, 0000 (18 December 1998); doi: 10.1117/12.332868
Poster Session: Defects, Inspection, and Repair
Proc. SPIE 3546, Advanced mask printability analysis using TINT Virtual Stepper System, 0000 (18 December 1998); doi: 10.1117/12.332869