PROCEEDINGS VOLUME 3547
PHOTONICS CHINA '98 | 16-19 SEPTEMBER 1998
Semiconductor Lasers III
PHOTONICS CHINA '98
16-19 September 1998
Beijing, China
Long-Wavelength Semiconductor Lasers
Proc. SPIE 3547, 1.55-um InGaAsP/InP partially gain-coupled distributed feedback laser/electroabsorption modulator integrated device for trunkline communication, 0000 (19 August 1998); doi: 10.1117/12.319593
Proc. SPIE 3547, Characteristics of 1.55-um gain-switched DFB laser diode, 0000 (19 August 1998); doi: 10.1117/12.319604
Proc. SPIE 3547, High-performance 155-nm InGaAsP/InP strained layer quantum well laser diodes fabricated by MOCVD overgrowth method, 0000 (19 August 1998); doi: 10.1117/12.319615
Proc. SPIE 3547, 1.3-um InGaAsP/InP strained-layer multiquantum well complex-coupled distributed feedback laser, 0000 (19 August 1998); doi: 10.1117/12.319626
High-Power Semiconductor Lasers
Proc. SPIE 3547, High-power BA Al-free InGaAsP/GaAs SCH SQW lasers, 0000 (19 August 1998); doi: 10.1117/12.319636
Proc. SPIE 3547, Carbon-doped 980-nm InGaAs strained quantum well lasers grown by metalorganic chemical vapor deposition, 0000 (19 August 1998); doi: 10.1117/12.319646
Proc. SPIE 3547, High-power 980-nm InGaAs/GaAs/AlGaAs window structure lasers fabricated by impurity-free vacancy diffusion, 0000 (19 August 1998); doi: 10.1117/12.319652
Proc. SPIE 3547, 808-nm high-power semiconductor laser arrays, 0000 (19 August 1998); doi: 10.1117/12.319653
Proc. SPIE 3547, Growth and fabrication of high-performance 980-nm strained InGaAs quantum well lasers using novel hybrid material system of InGaAsP and AlGaAs, 0000 (19 August 1998); doi: 10.1117/12.319654
Proc. SPIE 3547, Q-CW laser diode drive, 0000 (19 August 1998); doi: 10.1117/12.319594
Proc. SPIE 3547, 808-nm semiconductor laser Ohmic-contact technology, 0000 (19 August 1998); doi: 10.1117/12.319595
Proc. SPIE 3547, Investigation of 980-nm GaInAs/GaAs/GaInP QW high-power lasers, 0000 (19 August 1998); doi: 10.1117/12.319596
Proc. SPIE 3547, Single-lobe operation of BA InGaAsP/GaAs SCH SQW lasers, 0000 (19 August 1998); doi: 10.1117/12.319597
Proc. SPIE 3547, 808-nm Al-free InGaAsP/GaAs SCH SQW lasers fabricated by LPE, 0000 (19 August 1998); doi: 10.1117/12.319598
Proc. SPIE 3547, Thermal properties of high-power InGaAsP/InP stripe-geometry laser diode: calculation and analyses, 0000 (19 August 1998); doi: 10.1117/12.319599
Proc. SPIE 3547, Operating characteristics of InGaAsP/GaAs SCH SQW high-power lasers by LPE, 0000 (19 August 1998); doi: 10.1117/12.319600
VCSEL and Microcavity Semiconductor Laser, Visible Laser Diodes
Proc. SPIE 3547, Visible vertical-cavity surface-emitting laser, 0000 (19 August 1998); doi: 10.1117/12.319601
Proc. SPIE 3547, Study of single-mode 650-nm AlGaInP quantum well laser diodes for DVD, 0000 (19 August 1998); doi: 10.1117/12.319602
Proc. SPIE 3547, Controllable enhancement of spontaneous emission in perpendicular direction by single quantum well embedded in planar microcavities, 0000 (19 August 1998); doi: 10.1117/12.319603
Proc. SPIE 3547, Enhancement of spontaneous emission factor in selectively oxidized vertical-cavity lasers with double oxide layers, 0000 (19 August 1998); doi: 10.1117/12.319605
Proc. SPIE 3547, Optical-disk-mode pattern of InGaP microdisks emitting at 0.65 um, 0000 (19 August 1998); doi: 10.1117/12.319606
Proc. SPIE 3547, Optical properties and resonant modes in GaN/AlGaN and InGaN/GaN multiple quantum well microdisk cavities, 0000 (19 August 1998); doi: 10.1117/12.319607
Proc. SPIE 3547, Microcavity effect and InGaAs/InGaAsP MQW microdisk laser, 0000 (19 August 1998); doi: 10.1117/12.319608
Proc. SPIE 3547, Diffractive optical elements improve vertical-cavity surface-emitting laser beam quality, 0000 (19 August 1998); doi: 10.1117/12.319609
Proc. SPIE 3547, Planar organic microcavity of rare-earth Tb complex film with metal mirrors, 0000 (19 August 1998); doi: 10.1117/12.319610
Proc. SPIE 3547, Linewidth in microdisk laser, 0000 (19 August 1998); doi: 10.1117/12.319611
Semiconductor Laser Applications and Characterization
Proc. SPIE 3547, Frequency-stabilized tunable diode laser and strong transition iodine hyperfine spectra at 633 nm, 0000 (19 August 1998); doi: 10.1117/12.319612
Proc. SPIE 3547, 8x2.5-Gb/s OTDM data demultiplexing using an SLALOM, 0000 (19 August 1998); doi: 10.1117/12.319613
Proc. SPIE 3547, Compact and tunable blue laser based upon doubling Cr:LiSAF laser with KN Crystal, 0000 (19 August 1998); doi: 10.1117/12.319614
Proc. SPIE 3547, Visible light weak-feedback grating external-cavity tunable semiconductor laser, 0000 (19 August 1998); doi: 10.1117/12.319616
Proc. SPIE 3547, High-quality carbon-doped GaAs/AlGaAs material growth in MOCVD and its application for optoelectronic devices, 0000 (19 August 1998); doi: 10.1117/12.319617
Proc. SPIE 3547, Development of high-precision rotary encoder using semiconductor laser, 0000 (19 August 1998); doi: 10.1117/12.319618
Proc. SPIE 3547, Research of laser-diode-scanning drawing stripes, 0000 (19 August 1998); doi: 10.1117/12.319619
Proc. SPIE 3547, Noise compensation method study on APD photoelectronic detector, 0000 (19 August 1998); doi: 10.1117/12.319620
Semiconductor Laser Physics Process and Novel Devices
Proc. SPIE 3547, Influence of graded index waveguides on the gain difference between TEO and TMO modes of semiconductor optical amplifiers, 0000 (19 August 1998); doi: 10.1117/12.319621
Proc. SPIE 3547, Bandgaps and band offsets in strain-compensated InGaAs/InGaAsP multiple quantum wells, 0000 (19 August 1998); doi: 10.1117/12.319622
Proc. SPIE 3547, Applications of dielectric thin film by electron cyclotron resonance plasma chemical vapor deposition for semiconductor photoelectronic devices, 0000 (19 August 1998); doi: 10.1117/12.319623
Proc. SPIE 3547, Stability of strained MQWs in laser structure, 0000 (19 August 1998); doi: 10.1117/12.319624
Proc. SPIE 3547, Novel photonic device structures by using thermal rapid annealing-induced disordering, 0000 (19 August 1998); doi: 10.1117/12.319625
Proc. SPIE 3547, Using ray method to study three-electrode semiconductor lasers, 0000 (19 August 1998); doi: 10.1117/12.319627
Proc. SPIE 3547, Controlling chaos of a laser diode with all-external optical delaytime feedback, 0000 (19 August 1998); doi: 10.1117/12.319628
Long-Wavelength Semiconductor Lasers
Proc. SPIE 3547, Dynamic analysis on external optical-feedback-resistant characteristics in partially corrugated waveguide laser diodes, 0000 (19 August 1998); doi: 10.1117/12.319629
Proc. SPIE 3547, Very high power DFB CW light source at 1550 nm for high-performance supertrunking, 0000 (19 August 1998); doi: 10.1117/12.319630
Proc. SPIE 3547, Laser/modulator module for analog fiber optic links, 0000 (19 August 1998); doi: 10.1117/12.319631
Proc. SPIE 3547, Monolithically integrated InGaAsP/InP laser/modulator using identical layer approach for opto-electronic oscillator, 0000 (19 August 1998); doi: 10.1117/12.319632
High-Power Semiconductor Lasers
Proc. SPIE 3547, Reliability comparison of GaAlAs/GaAs and aluminum-free high-power laser diodes, 0000 (19 August 1998); doi: 10.1117/12.319633
Proc. SPIE 3547, Ultrahigh-power semiconductor lasers and their applications, 0000 (19 August 1998); doi: 10.1117/12.319634
Semiconductor Laser Physics Process and Novel Devices
Proc. SPIE 3547, Novel surface-sensitive diode lasers for chemical detection, 0000 (19 August 1998); doi: 10.1117/12.319635
VCSEL and Microcavity Semiconductor Laser, Visible Laser Diodes
Proc. SPIE 3547, Design of semiconductor microcavity emitters and detectors for optical memory and interconnect systems, 0000 (19 August 1998); doi: 10.1117/12.319637
Semiconductor Laser Applications and Characterization
Proc. SPIE 3547, Large-signal regime four-wave mixing characteristcs of multisection laser diodes, 0000 (19 August 1998); doi: 10.1117/12.319638
Proc. SPIE 3547, Analysis and measurement of optical phase conjugation in laser diodes subject to a strong input signal, 0000 (19 August 1998); doi: 10.1117/12.319639
Proc. SPIE 3547, Hybrid mode-lock InGaAsP/InP MQW laser as a multiwavelength source for WDM, 0000 (19 August 1998); doi: 10.1117/12.319640
Proc. SPIE 3547, Multiwavelength arrays of mode-locked lasers for WDM applications, 0000 (19 August 1998); doi: 10.1117/12.319641
Proc. SPIE 3547, Axial-graded-index (AGRIN) lens-based wavelength division demultiplexer for multmode fiber optic systems, 0000 (19 August 1998); doi: 10.1117/12.319642
Proc. SPIE 3547, Optical CDMA components requirements, 0000 (19 August 1998); doi: 10.1117/12.319643
Proc. SPIE 3547, Semiconductor laser-based optoelectronics oscillators, 0000 (19 August 1998); doi: 10.1117/12.319644
Semiconductor Laser Physics Process and Novel Devices
Proc. SPIE 3547, Quantum well intermixing in GaAs-AlGaAs laser structure using sol-gel SiO2 dielectric cap, 0000 (19 August 1998); doi: 10.1117/12.319645
Proc. SPIE 3547, High quantum efficiency InAs/GaInSb/AlSb interband cascade lasers, 0000 (19 August 1998); doi: 10.1117/12.319647