PROCEEDINGS VOLUME 3550
PHOTONICS CHINA '98 | 16-19 SEPTEMBER 1998
Laser Processing of Materials and Industrial Applications II
PHOTONICS CHINA '98
16-19 September 1998
Beijing, China
Laser-Induced Removal
Proc. SPIE 3550, Laser drilling for improving circuit board manufacturing, 0000 (15 August 1998); doi: 10.1117/12.317889
Laser Deposition I
Proc. SPIE 3550, Laser synthesis of nano powders of Si-based nitrides and carbides, 0000 (15 August 1998); doi: 10.1117/12.317900
Proc. SPIE 3550, Synthesis of carbon nitride films by arc-heated atomic nitrogen beams assisted pulsed laser ablation, 0000 (15 August 1998); doi: 10.1117/12.317911
Proc. SPIE 3550, Preparation of Fe2O3 nanometer crystalloid material by a high-power laser, 0000 (15 August 1998); doi: 10.1117/12.317922
Proc. SPIE 3550, Method of preparation of nanometer crytalloid by laser vaporization-solidification and its mechanism, 0000 (15 August 1998); doi: 10.1117/12.317932
Proc. SPIE 3550, Cu/Fe powder gradient material sintered by laser processing, 0000 (15 August 1998); doi: 10.1117/12.317942
Proc. SPIE 3550, Nanocrystallite preparation by pulsed-laser-induced reaction at liquid-solid interface, 0000 (15 August 1998); doi: 10.1117/12.317951
Proc. SPIE 3550, Laser-assisted chemical vapor deposition of diamond films, 0000 (15 August 1998); doi: 10.1117/12.317961
Proc. SPIE 3550, Preparation of superconducting YBa2Cu3O7-x films on metallic substrates by pulsed-laser deposition, 0000 (15 August 1998); doi: 10.1117/12.317963
Proc. SPIE 3550, Formation of the patterned nanocrystalline Si by pulsed-laser interference crystallization of a-Si:H thin films, 0000 (15 August 1998); doi: 10.1117/12.317890
Laser Surface Modifications I
Proc. SPIE 3550, Binary optics beam mode transformer and its application in high-power laser processing, 0000 (15 August 1998); doi: 10.1117/12.317891
Proc. SPIE 3550, Processing time and the temperature field of laser quenching on material surfaces, 0000 (15 August 1998); doi: 10.1117/12.317892
Proc. SPIE 3550, Effects of laser shock processing on the fatigue crack growth rates of 2024-T62 aluminum alloy, 0000 (15 August 1998); doi: 10.1117/12.317893
Proc. SPIE 3550, Semianalytic calculation of transient temperature field of laser heat treatment on workpiece of non-cross-cut boundary, 0000 (15 August 1998); doi: 10.1117/12.317894
Proc. SPIE 3550, Laser surface hardening for tooling high-speed steel, 0000 (15 August 1998); doi: 10.1117/12.317895
Proc. SPIE 3550, Temperature field of laser transformation influenced by applied stress, 0000 (15 August 1998); doi: 10.1117/12.317896
Proc. SPIE 3550, Laser surface hardening for cam shaft, 0000 (15 August 1998); doi: 10.1117/12.317897
Proc. SPIE 3550, Numerical analysis of temperature field during laser heating and cooling, 0000 (15 August 1998); doi: 10.1117/12.317898
Laser Machining I
Proc. SPIE 3550, Sensing and control system of process quality in CO2 laser deep-penetration welding, 0000 (15 August 1998); doi: 10.1117/12.317899
Proc. SPIE 3550, Development and tendency of rapid prototyping technology, 0000 (15 August 1998); doi: 10.1117/12.317901
Proc. SPIE 3550, Laser scribing on polycrystalline diamond compound blade, 0000 (15 August 1998); doi: 10.1117/12.317902
Proc. SPIE 3550, Laser marking of stainless steel with a Q-switched Nd:YAG laser, 0000 (15 August 1998); doi: 10.1117/12.317903
Proc. SPIE 3550, Laser cutting ceramics with a Q-switched pulse CO2 laser, 0000 (15 August 1998); doi: 10.1117/12.317904
Proc. SPIE 3550, Laser forming cutting once quenched high-speed tool steel (HSTS) disk-shaped milling cutter, 0000 (15 August 1998); doi: 10.1117/12.317905
Proc. SPIE 3550, Effect of applied stress on carbon steel during laser process, 0000 (15 August 1998); doi: 10.1117/12.317906
Proc. SPIE 3550, Laser marking of slide calipers, 0000 (15 August 1998); doi: 10.1117/12.317907
Proc. SPIE 3550, Manufacturing technology by synchrotron radiation in NSRL, 0000 (15 August 1998); doi: 10.1117/12.317908
Proc. SPIE 3550, Establishment and analysis of new heat-transfer model on high-power CO2 laser beam welding, 0000 (15 August 1998); doi: 10.1117/12.317909
Proc. SPIE 3550, Third-order B-splines in laser-processing system, 0000 (15 August 1998); doi: 10.1117/12.317910
Proc. SPIE 3550, Finite element method analysis for temperature field influence by applied stress during laser processing, 0000 (15 August 1998); doi: 10.1117/12.317912
Proc. SPIE 3550, Analysis on the variation of Ar and He plasma refractive index with temperature in CO2 laser beam welding, 0000 (15 August 1998); doi: 10.1117/12.317913
Proc. SPIE 3550, Study of heat conduction equation under electromagnetic field condition during laser heat treatment, 0000 (15 August 1998); doi: 10.1117/12.317914
Proc. SPIE 3550, Laser beam quality factor M2 and its measurement, 0000 (15 August 1998); doi: 10.1117/12.317915
Proc. SPIE 3550, Design and study on weld protection drag cover as welding Ti6A14V by CO2 laser, 0000 (15 August 1998); doi: 10.1117/12.317916
Laser Systems
Proc. SPIE 3550, Laser direct writing system and its lithography properties, 0000 (15 August 1998); doi: 10.1117/12.317917
Proc. SPIE 3550, Flexible focus variable expander, 0000 (15 August 1998); doi: 10.1117/12.317918
Proc. SPIE 3550, Preparation of nanosized SiO2 powder through laser-induced chemical vapor deposition technology, 0000 (15 August 1998); doi: 10.1117/12.317919
Proc. SPIE 3550, Laser beam smoothing by rotating random phase plate, 0000 (15 August 1998); doi: 10.1117/12.317920
Proc. SPIE 3550, High-efficiency high-beam-quality 38-W Nd:YAG slab laser end-pumped by a stack with three diode bars, 0000 (15 August 1998); doi: 10.1117/12.317921
Proc. SPIE 3550, New method for superplasticity shaping: laser superplasticity shaping in the vacuum negative pressure condition, 0000 (15 August 1998); doi: 10.1117/12.317923
Proc. SPIE 3550, Low-debris plasma source produced by high-power laser, 0000 (15 August 1998); doi: 10.1117/12.317924
Proc. SPIE 3550, Liquid thermal diffusivity measurement by pulsed photothermal deflection technique, 0000 (15 August 1998); doi: 10.1117/12.317925
Proc. SPIE 3550, Design of alterable laser thread length scan system, 0000 (15 August 1998); doi: 10.1117/12.317926
Proc. SPIE 3550, Excimer laser deep microstructuring for LIGA process, 0000 (15 August 1998); doi: 10.1117/12.317927
Proc. SPIE 3550, Improving the stability of a multi-electrode-pair-pulsed laser, 0000 (15 August 1998); doi: 10.1117/12.317928
Proc. SPIE 3550, Two kinds of new beam lasers, 0000 (15 August 1998); doi: 10.1117/12.317929
Proc. SPIE 3550, Measurement of TEM of high-power CO2 laser beam by computer processing organic-glass burning mark, 0000 (15 August 1998); doi: 10.1117/12.317930
Laser-Induced Removal
Proc. SPIE 3550, Theoretical model and experimental study for dry and steam laser cleaning, 0000 (15 August 1998); doi: 10.1117/12.317931
Proc. SPIE 3550, Laser cleaning of magnetic disks, 0000 (15 August 1998); doi: 10.1117/12.317933
Laser Deposition II
Proc. SPIE 3550, Laser ablation of PMMA doped with benzyl, 0000 (15 August 1998); doi: 10.1117/12.317934
Proc. SPIE 3550, Deposition of boron-carbon-nitrogen ternary thin films by ion-beam-assisted excimer ablation of B4C target, 0000 (15 August 1998); doi: 10.1117/12.317935
Proc. SPIE 3550, Carbon nitride thin films deposited by nitrogen-ion-assisted laser ablation of graphite, 0000 (15 August 1998); doi: 10.1117/12.317936
Proc. SPIE 3550, KrF excimer laser deposition of titanium thin films on silicon substrates, 0000 (15 August 1998); doi: 10.1117/12.317937
Proc. SPIE 3550, Excimer laser sputtering deposition of skutterudites for thermoelectric applications, 0000 (15 August 1998); doi: 10.1117/12.317938
Proc. SPIE 3550, Growth and characterization of B-FeSi2 thin films prepared by laser ablation method, 0000 (15 August 1998); doi: 10.1117/12.317939
Proc. SPIE 3550, Precipitation of carbon in zeolites using photochemical reaction excited by an ArF excimer laser, 0000 (15 August 1998); doi: 10.1117/12.317940
Laser Deposition III
Proc. SPIE 3550, New ceramic coating technique using laser spraying process, 0000 (15 August 1998); doi: 10.1117/12.317941
Proc. SPIE 3550, Preparation of CuInSe2 thin films by pulsed-laser ablation technique using CuInSe2 bulk crystal targets, 0000 (15 August 1998); doi: 10.1117/12.317943