PROCEEDINGS VOLUME 3551
PHOTONICS CHINA '98 | 16-19 SEPTEMBER 1998
Integrated Optoelectronics II
PHOTONICS CHINA '98
16-19 September 1998
Beijing, China
Thin Film Optoelectronic Material and Simulation
Proc. SPIE 3551, Nature of iron in InP: an FTIR study, 0000 (12 August 1998); doi: 10.1117/12.317964
Proc. SPIE 3551, Dynamics of defect formation in annealed InP, 0000 (12 August 1998); doi: 10.1117/12.317975
Proc. SPIE 3551, GaP/Si heterostructures grown by GS-MBE, 0000 (12 August 1998); doi: 10.1117/12.317986
Proc. SPIE 3551, Preparation and photoluminescence of nc-Si/SiO2 MQW, 0000 (12 August 1998); doi: 10.1117/12.317995
Proc. SPIE 3551, SPER and characteristics of Si1-yCy alloys, 0000 (12 August 1998); doi: 10.1117/12.317996
Proc. SPIE 3551, Design and fabrication of GaAs OMIST photodetector, 0000 (12 August 1998); doi: 10.1117/12.317997
Proc. SPIE 3551, Electroluminescence and photoluminescence of Si/SiGe self-assembly quantum dot structures, 0000 (12 August 1998); doi: 10.1117/12.317998
Proc. SPIE 3551, Photoluminescence measurement on erbium-doped silicon, 0000 (12 August 1998); doi: 10.1117/12.317999
Proc. SPIE 3551, Deep finlike AlGaAs nanostructure fabricated by CAIBE, 0000 (12 August 1998); doi: 10.1117/12.318000
Thin Film Optoelectronic Devices
Proc. SPIE 3551, Numerical study of gain of Er3+-doped LiNbO3 waveguide amplifier, 0000 (12 August 1998); doi: 10.1117/12.317965
Proc. SPIE 3551, Growth factor of Fe-doped semi-insulating InP by LP-MOCVD, 0000 (12 August 1998); doi: 10.1117/12.317966
Proc. SPIE 3551, Novel method for fabricating waveguide grating by phase mask technique, 0000 (12 August 1998); doi: 10.1117/12.317967
Proc. SPIE 3551, Digital measurements of propagation loss in optical organic polymer waveguides, 0000 (12 August 1998); doi: 10.1117/12.317968
Proc. SPIE 3551, Optical modulation in ZnSe-ZnS multiple quantum wells, 0000 (12 August 1998); doi: 10.1117/12.317969
Proc. SPIE 3551, Analysis and simulation of the performances of Si/SiGe HBTs and monolithic integrated preamplifiers of photoreceivers, 0000 (12 August 1998); doi: 10.1117/12.317970
Proc. SPIE 3551, Upconversion luminescence of Tm3+- and Yb3+-codoped pentaphosphate noncrystalline under the pumping of a 798-nm laser diode, 0000 (12 August 1998); doi: 10.1117/12.317971
Proc. SPIE 3551, Integrated acousto-optic frequency shifter with surface acoustic wave, 0000 (12 August 1998); doi: 10.1117/12.317972
Proc. SPIE 3551, Design of 4x4 GaAs-GaAlAs carrier-injected total internal reflect optical switch array, 0000 (12 August 1998); doi: 10.1117/12.317973
Proc. SPIE 3551, Upconversion luminescence of ZBLAN:Tm3+,Yb3+ glass pumped by a ~970-nm LD and its concentration effect, 0000 (12 August 1998); doi: 10.1117/12.317974
Proc. SPIE 3551, Phenomenon of the second uprising of Yb.Er:ZBLAN upconversion luminescence by the power of a 966-nm pumping laser, 0000 (12 August 1998); doi: 10.1117/12.317976
Proc. SPIE 3551, High-power superluminescent diodes, 0000 (12 August 1998); doi: 10.1117/12.317977
Device and System Application Using Integrated Optoelectronic Circuits
Proc. SPIE 3551, Optically controlled multiple-beam-forming network for phased-array radar, 0000 (12 August 1998); doi: 10.1117/12.317978
Proc. SPIE 3551, High-speed multiplication for digital optical computing, 0000 (12 August 1998); doi: 10.1117/12.317979
Proc. SPIE 3551, Nondestructive measurement for impurity concentration inserted in multilayer inhomogeneous material, 0000 (12 August 1998); doi: 10.1117/12.317980
Proc. SPIE 3551, Function testing and failure analysis of integrated circuit chip using laser probe, 0000 (12 August 1998); doi: 10.1117/12.317981
Proc. SPIE 3551, Design and fabrication of GaAs-integrated optical chip used in a fiber optic gyroscope, 0000 (12 August 1998); doi: 10.1117/12.317982
Proc. SPIE 3551, Ray optics formation theory of geodesic lenses, 0000 (12 August 1998); doi: 10.1117/12.317983
Proc. SPIE 3551, Novel optoelectronic sorting network with recirculating architecture, 0000 (12 August 1998); doi: 10.1117/12.317984
Proc. SPIE 3551, Stability of GaAs photocathode, 0000 (12 August 1998); doi: 10.1117/12.317985
Proc. SPIE 3551, GaAs 1x4 optical power splitter, 0000 (12 August 1998); doi: 10.1117/12.317987
Proc. SPIE 3551, Harmonic diffractive optical element and its application, 0000 (12 August 1998); doi: 10.1117/12.317988
Proc. SPIE 3551, 128x128-element silicon microlens array fabricated by ion-beam etching for PtSi IRCCD, 0000 (12 August 1998); doi: 10.1117/12.317989
Proc. SPIE 3551, Silicon field emitter microtip array fabricated by ion-beam etching, 0000 (12 August 1998); doi: 10.1117/12.317990
Thin Film Optoelectronic Devices
Proc. SPIE 3551, Silicon opto-FET coupled to waveguides for integrated optical microsystems, 0000 (12 August 1998); doi: 10.1117/12.317991
Thin Film Optoelectronic Material and Simulation
Proc. SPIE 3551, Phase conjugation of picosecond optical pulses in semiconductor optical amplifiers, 0000 (12 August 1998); doi: 10.1117/12.317992
Device and System Application Using Integrated Optoelectronic Circuits
Proc. SPIE 3551, Board-level optical clock signal distribution using Si CMOS-compatible polyimide-based 1- to 48-fanout H-tree, 0000 (12 August 1998); doi: 10.1117/12.317993
Thin Film Optoelectronic Material and Simulation
Proc. SPIE 3551, Modeling and design of waveguide-coupled single-mode microring resonators, 0000 (12 August 1998); doi: 10.1117/12.317994
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