PROCEEDINGS VOLUME 3621
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES | 23-29 JANUARY 1999
Light-Emitting Diodes: Research, Manufacturing, and Applications III
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES
23-29 January 1999
San Jose, CA, United States
III-Nitride Light-Emitting Diodes
Proc. SPIE 3621, InGaN-based UV/blue/green/amber LEDs, 0000 (14 April 1999); doi: 10.1117/12.344464
Proc. SPIE 3621, Progress and status of visible light-emitting diode technology, 0000 (14 April 1999); doi: 10.1117/12.344472
Proc. SPIE 3621, InGaN blue light-emitting diodes with optimized n-GaN layer, 0000 (14 April 1999); doi: 10.1117/12.344483
Proc. SPIE 3621, Gallium-nitride-based LEDs on silicon substrates, 0000 (14 April 1999); doi: 10.1117/12.344486
Proc. SPIE 3621, Growth and characterization of high-efficiency InGaN MQW blue and green LEDs from large-scale-production MOCVD reactors, 0000 (14 April 1999); doi: 10.1117/12.344487
III-Nitrides and Related Materials
III-As and III-P LEDs
Proc. SPIE 3621, Engineering high-quality InxGa1-xP graded composition buffers on GaP for transparent substrate light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344465
Organic and Polymer LEDs
Proc. SPIE 3621, Organic electroluminescent displays, 0000 (14 April 1999); doi: 10.1117/12.344466
Proc. SPIE 3621, Application of polyfluorenes and related polymers in light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344467
Proc. SPIE 3621, Improved lifetime and efficiency of organic light-emitting diodes for applications in displays, 0000 (14 April 1999); doi: 10.1117/12.344468
III-As and III-P LEDs
Proc. SPIE 3621, Growth of InGaAlP HB-LEDs in a large-scale-production reactor, 0000 (14 April 1999); doi: 10.1117/12.344469
Proc. SPIE 3621, Optical studies of InAs/In(As,Sb) single quantum well (SQW) and strained-layer superlattice (SLS) LEDs for the mid-infrared (MIR) region, 0000 (14 April 1999); doi: 10.1117/12.344470
Proc. SPIE 3621, Temperature dependence of magneto-optical properties of Zn1-xMnxSe, 0000 (14 April 1999); doi: 10.1117/12.344471
Proc. SPIE 3621, White LED, 0000 (14 April 1999); doi: 10.1117/12.344473
Proc. SPIE 3621, High-efficiency top-emitting microcavity light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344474
Proc. SPIE 3621, 16.8% external quantum efficiency from a planar LED, 0000 (14 April 1999); doi: 10.1117/12.344475
Proc. SPIE 3621, Uniformity of GaInAsP/GaInAsP multiquantum well structures grown in multiwafer reactors, 0000 (14 April 1999); doi: 10.1117/12.344476
Novel Structures and Materials
Proc. SPIE 3621, Control of spontaneus emission in photonic crystals, 0000 (14 April 1999); doi: 10.1117/12.344477
Proc. SPIE 3621, Infrared light-emitting diodes with lateral outcoupling taper for high extraction efficiency, 0000 (14 April 1999); doi: 10.1117/12.344478
Proc. SPIE 3621, Frequency limits of high-efficiency non-resonant cavity light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344479
Proc. SPIE 3621, Size dependence of record-efficiency non-resonant cavity light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344480
Proc. SPIE 3621, Realization of highly efficient and high-speed resonant cavity LED for coupling to plastic optical fibers, 0000 (14 April 1999); doi: 10.1117/12.344481
Proc. SPIE 3621, Solid-source molecular beam epitaxy growth and characteristics of resonant cavity light-emitting diodes, 0000 (14 April 1999); doi: 10.1117/12.344482
Proc. SPIE 3621, Efficiency improvement in light-emitting diodes based on geometrically deformed chips, 0000 (14 April 1999); doi: 10.1117/12.344484
Proc. SPIE 3621, Diode light sources for retinal scanning displays, 0000 (14 April 1999); doi: 10.1117/12.344485
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