PROCEEDINGS VOLUME 3622
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES | 23-29 JANUARY 1999
Rare-Earth-Doped Materials and Devices III
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES
23-29 January 1999
San Jose, CA, United States
Material Fabrication and Characterization I
Proc. SPIE 3622, Rare-earth glasses for new optical applications: microscopic modifications by a femtosecond laser and realization of new optical functions, 0000 (1 April 1999); doi: 10.1117/12.344491
Proc. SPIE 3622, Characterization of cooperative upconversion and energy transfer of Er3+ and Yb3+/Er3+ doped phosphate glasses, 0000 (1 April 1999); doi: 10.1117/12.344510
Proc. SPIE 3622, Spectroscopic properties of rare-earth ions in heavy metal oxide and phosphate-containing glasses, 0000 (1 April 1999); doi: 10.1117/12.344511
Material Fabrication and Characterization II
Proc. SPIE 3622, Nonoxide glass waveguides, 0000 (1 April 1999); doi: 10.1117/12.344512
Proc. SPIE 3622, Negative nonlinear absorption effect in glasses containing a large amount of erbium oxide, 0000 (1 April 1999); doi: 10.1117/12.344513
Proc. SPIE 3622, Erbium-doped tellurite glasses for 1.5-um broadband amplification, 0000 (1 April 1999); doi: 10.1117/12.344514
Proc. SPIE 3622, Optical storage mechanisms of electron trapping materials, 0000 (1 April 1999); doi: 10.1117/12.344492
Poster Session
Proc. SPIE 3622, Effect of erbium concentration on upconversion luminescence of Er:Yb:phosphate glass excited by InGaAs laser diode, 0000 (1 April 1999); doi: 10.1117/12.344493
Material Fabrication and Characterization II
Proc. SPIE 3622, Preparation and characterization of erbium-doped sol-gel silica glasses, 0000 (1 April 1999); doi: 10.1117/12.344494
Waveguides and Devices I
Proc. SPIE 3622, Erbium-ytterbium miniaturized laser devices for optical communications, 0000 (1 April 1999); doi: 10.1117/12.344495
Proc. SPIE 3622, Mode-locked and Q-switched Ti:Er:LiNbO3 waveguide lasers, 0000 (1 April 1999); doi: 10.1117/12.344496
Proc. SPIE 3622, Luminescent properties of Er-doped BaTiO3 thin films for optical waveguides, 0000 (1 April 1999); doi: 10.1117/12.344497
Proc. SPIE 3622, 1.55-um Er-doped GaN LED, 0000 (1 April 1999); doi: 10.1117/12.344498
Waveguides and Devices II
Proc. SPIE 3622, Rare-earth-doped fiber amplifiers for broadband optical communications, 0000 (1 April 1999); doi: 10.1117/12.344499
Proc. SPIE 3622, Preparation and characterization of Er-doped SiO2-TiO2-Al2O3 planar waveguides by sol-gel process for integrated optical amplifiers, 0000 (1 April 1999); doi: 10.1117/12.344500
Proc. SPIE 3622, Strip-loaded structure for ion-exchanged Er3+-doped glass waveguide amplifiers, 0000 (1 April 1999); doi: 10.1117/12.344501
Proc. SPIE 3622, Strip-loaded sol-gel waveguides for optical amplifiers, 0000 (1 April 1999); doi: 10.1117/12.344502
Proc. SPIE 3622, Polarization-dependent performance of helically wound EDFAs, 0000 (1 April 1999); doi: 10.1117/12.344503
Poster Session
Proc. SPIE 3622, Effect of heating on spectral characteristics of Er-doped laser glasses, 0000 (1 April 1999); doi: 10.1117/12.344504
Proc. SPIE 3622, Optical amplification in localized doping of Er:Ti:LiNbO3 waveguides, 0000 (1 April 1999); doi: 10.1117/12.344505
Proc. SPIE 3622, Modeling of erbium-doped fiber amplifiers (EDFAs) using a Gaussian profile for the doped ion concentration, 0000 (1 April 1999); doi: 10.1117/12.344506
Proc. SPIE 3622, Comparison between the 1.54-um spectral and laser characteristics of the two types of Er:Yb:phosphate glasses, 0000 (1 April 1999); doi: 10.1117/12.344507
Proc. SPIE 3622, Spectroscopic properties of trivalent samarium ions in glasses, 0000 (1 April 1999); doi: 10.1117/12.344508
Material Fabrication and Characterization II
Proc. SPIE 3622, Potential and challenges of sol-gel materials for erbium-doped amplifiers, 0000 (1 April 1999); doi: 10.1117/12.344509
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