Wide-Bandgap Lasers
Proc. SPIE 3625, Characterization of InGaN/AlGaN multiple-quantum-well laser diodes, 0000 (6 August 1999); doi: 10.1117/12.356863
Proc. SPIE 3625, Current status and perspective of ZnMgSSe-based II-VI laser diodes, 0000 (6 August 1999); doi: 10.1117/12.356883
Optical Properties of Wide-Bandgap Materials
Proc. SPIE 3625, Optical gain and waveguiding in GaN-based quantum well lasers, 0000 (6 August 1999); doi: 10.1117/12.356893
Proc. SPIE 3625, Recombination lifetimes in undoped and doped ZnCdSe laser structures, 0000 (6 August 1999); doi: 10.1117/12.356902
Proc. SPIE 3625, Modeling the optical constants of wide-bandgap materials, 0000 (6 August 1999); doi: 10.1117/12.356911
Proc. SPIE 3625, Nonlinear optical spectroscopy of band tail states in highly excited InGaN, 0000 (6 August 1999); doi: 10.1117/12.356921
Proc. SPIE 3625, Comparative study of near-threshold stimulated emission mechanisms in GaN epilayers and InGaN/GaN multiquantum wells, 0000 (6 August 1999); doi: 10.1117/12.356931
Many-Body Effects
Proc. SPIE 3625, Space charge and many-body effects on the optical gain in semiconductor quantum wells for advanced laser design, 0000 (6 August 1999); doi: 10.1117/12.356864
Proc. SPIE 3625, Structural dependencies of many-body optical gain with piezoelectric field effects in wurtzite GaN/AlGaN quantum well lasers, 0000 (6 August 1999); doi: 10.1117/12.356865
Proc. SPIE 3625, T-matrix many-particle theory for low-dimensional semiconductor optics, 0000 (6 August 1999); doi: 10.1117/12.356866
Proc. SPIE 3625, Gain characteristics of ZnSe/(Zn,Mg)(S,Se)/(Zn,Mg)(S,Se) quantum well lasers, 0000 (6 August 1999); doi: 10.1117/12.356867
Fibers and Waveguides
Proc. SPIE 3625, Modeling, simulation, and synthesis of photonic integrated circuits using VHDL-AMS and FD-BPM, 0000 (6 August 1999); doi: 10.1117/12.356868
Proc. SPIE 3625, Propagation modeling for multimode photonics, 0000 (6 August 1999); doi: 10.1117/12.356869
Proc. SPIE 3625, Optimization of dispersion-shifted fiber phase conjugator including zero dispersion wavelength variation, 0000 (6 August 1999); doi: 10.1117/12.356870
Proc. SPIE 3625, Design and characterization of spot-size expanders for improved laser-fiber coupling, 0000 (6 August 1999); doi: 10.1117/12.356871
Proc. SPIE 3625, Orthogonal coupled-mode theory for rectangular dielectric waveguides, 0000 (6 August 1999); doi: 10.1117/12.356872
Modulators
Proc. SPIE 3625, Polarization-sensitive optically addressed light modulators based on excitonic optical nonlinearities in optically anisotropic materials, 0000 (6 August 1999); doi: 10.1117/12.356873
Proc. SPIE 3625, Structural optimization of InGaAsP/InP MQW electroabsorption waveguide modulator, 0000 (6 August 1999); doi: 10.1117/12.356875
Proc. SPIE 3625, Analysis of traveling-wave coplanar waveguide MQW electroabsorption modulator using the 3D finite-difference time-domain method, 0000 (6 August 1999); doi: 10.1117/12.356876
Ultrafast Devices
Proc. SPIE 3625, Recent advances in ultrafast all-optical signal processing, 0000 (6 August 1999); doi: 10.1117/12.356877
Proc. SPIE 3625, Intersubband transitions in InGaAs/AlAs QWs on GaAs and application to ultrafast all-optical modulators, 0000 (6 August 1999); doi: 10.1117/12.356878
Proc. SPIE 3625, Generation of short wavelength-tunable semiconductor laser pulses, 0000 (6 August 1999); doi: 10.1117/12.356879
Proc. SPIE 3625, Electrical autocorrelation of pin photodiodes, 0000 (6 August 1999); doi: 10.1117/12.356880
Amplifiers, Grating Devices, and Coupled Diode Lasers
Proc. SPIE 3625, Cross gain modulation in semiconductor optical amplifier, 0000 (6 August 1999); doi: 10.1117/12.356881
Proc. SPIE 3625, Polarization-insensitive semiconductor laser amplifier with a single-type quantum well, 0000 (6 August 1999); doi: 10.1117/12.356882
Proc. SPIE 3625, Polarization-dependent four-wave mixing in distributed-feedback lasers, 0000 (6 August 1999); doi: 10.1117/12.356884
Proc. SPIE 3625, Analysis of surface-mode coupled semiconductor laser structures with adjustable emission wavelength, 0000 (6 August 1999); doi: 10.1117/12.356885
Quantum Dots
Proc. SPIE 3625, Electronic structure and optical polarization anisotropy of self-organized InAs/GaAs quantum dots, 0000 (6 August 1999); doi: 10.1117/12.356886
Proc. SPIE 3625, Observation of enhanced spontaneous decay in 1-um-aperture microcavities with InGaAlAs quantum dot active regions, 0000 (6 August 1999); doi: 10.1117/12.356887
Proc. SPIE 3625, Spatial hole burning in a quantum dot laser, 0000 (6 August 1999); doi: 10.1117/12.356888
Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3625, GaInAsP/InP vertical-cavity surface-emitting laser for 1.5-um operation, 0000 (6 August 1999); doi: 10.1117/12.356890
Proc. SPIE 3625, Design of InGaN/GaN/AlGaN VCSELs using the effective frequency method, 0000 (6 August 1999); doi: 10.1117/12.356891
VCSEL Simulation
Proc. SPIE 3625, Modeling and application of VCSELs for optical interconnection, 0000 (6 August 1999); doi: 10.1117/12.356894
Proc. SPIE 3625, Comparison of optical analysis methods for oxide-apertured VCSELs, 0000 (6 August 1999); doi: 10.1117/12.356895
Proc. SPIE 3625, 3D electrothermal simulation of intracavity-contacted oxide-confined VCSELs operating at room temperature and at 77 K, 0000 (6 August 1999); doi: 10.1117/12.356896
Proc. SPIE 3625, Multidisciplinary design tools for VCSEL devices and compact electronic packages, 0000 (6 August 1999); doi: 10.1117/12.356897
Proc. SPIE 3625, Transverse mode dynamics of VCSELs through space-time domain simulation, 0000 (6 August 1999); doi: 10.1117/12.356898
Noise in Vertical-Cavity Surface-Emitting Lasers
Proc. SPIE 3625, Mode partition noise in multi-transverse mode vertical-cavity surface-emitting lasers, 0000 (6 August 1999); doi: 10.1117/12.356899
Proc. SPIE 3625, Characterization of a vertical-cavity surface-emitting laser (VCSEL) by electrical and optical noise measurements, 0000 (6 August 1999); doi: 10.1117/12.356900
Growth and Technological Process Modeling
Proc. SPIE 3625, Process simulation of selective-area MOCVD growth for optoelectronic integrated circuits, 0000 (6 August 1999); doi: 10.1117/12.356901
Proc. SPIE 3625, Development of an advanced computational model for OMCVD of indium nitride, 0000 (6 August 1999); doi: 10.1117/12.356903
Proc. SPIE 3625, Energetics and dynamics of GaAs epitaxial growth via quantum wave packet studies, 0000 (6 August 1999); doi: 10.1117/12.356904
Proc. SPIE 3625, Reactor and process modeling in optoelectronic device fabrication, 0000 (6 August 1999); doi: 10.1117/12.356905
Red Lasers and Quantum-Well Physics
Proc. SPIE 3625, Carrier transport in AlGaInP laser structures, 0000 (6 August 1999); doi: 10.1117/12.356906
Proc. SPIE 3625, Characterization of the effects of Al incorporation in AlGaInP light emitters, 0000 (6 August 1999); doi: 10.1117/12.356907
Proc. SPIE 3625, Exciton Green's function method for interdiffused InGaAs/GaAs-strained quantum wells, 0000 (6 August 1999); doi: 10.1117/12.356908
Proc. SPIE 3625, Optical properties of tensile-strained barrier GaAsP/GaAs intermixed quantum well structure, 0000 (6 August 1999); doi: 10.1117/12.356909
Proc. SPIE 3625, Magneto-excitons in (411)A and (100)-oriented GaAs/AlGaAs multiple quantum well structures, 0000 (6 August 1999); doi: 10.1117/12.356910
Simulation of Edge-Emitting Semiconductor Lasers and Photodetectors
Proc. SPIE 3625, Thermomechanical design of a microchannel cooled semiconductor laser diode array package, 0000 (6 August 1999); doi: 10.1117/12.356913
Proc. SPIE 3625, Numerical simulation of energy balance equations in AlGaAs/GaAs p-i-n diodes with single quantum wells, 0000 (6 August 1999); doi: 10.1117/12.356914
Proc. SPIE 3625, Simulation of optical coupling in quantum well infrared photodetectors, 0000 (6 August 1999); doi: 10.1117/12.356915
Proc. SPIE 3625, Circuit-level model of semiconductor photodetectors, 0000 (6 August 1999); doi: 10.1117/12.356916
Novel Materials and Device Structures
Proc. SPIE 3625, Simulations of InAs/InGaSb type-II heterostructures for mid-IR lasers, 0000 (6 August 1999); doi: 10.1117/12.356917
Proc. SPIE 3625, Wavelength-tunable hybrid laser diode realized by using an electrostatically tuned silicon micromachined Fabry-Perot interferometer, 0000 (6 August 1999); doi: 10.1117/12.356918
Proc. SPIE 3625, Novel hot-electron light emitter, 0000 (6 August 1999); doi: 10.1117/12.356919
Physics of Optical Transitions
Proc. SPIE 3625, Optical properties of III-nitride microcavities, 0000 (6 August 1999); doi: 10.1117/12.356920
Proc. SPIE 3625, Validity of the relation between spontaneous and stimulated emissions in semiconductors, 0000 (6 August 1999); doi: 10.1117/12.356922