PROCEEDINGS VOLUME 3629
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES | 23-29 JANUARY 1999
Photodetectors: Materials and Devices IV
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES
23-29 January 1999
San Jose, CA, United States
Infrared Detectors and Materials I
Proc. SPIE 3629, Photovoltaic IV-VI on silicon infrared devices for thermal imaging applications, 0000 (7 April 1999); doi: 10.1117/12.344567
Infrared Detectors and Materials II
Proc. SPIE 3629, MOVPE growth of HgCdTe for bandgap engineered IR detector arrays, 0000 (7 April 1999); doi: 10.1117/12.344578
Proc. SPIE 3629, Computer simulation of HgCdTe photovoltaic devices based on complex heterostructures, 0000 (7 April 1999); doi: 10.1117/12.344584
Proc. SPIE 3629, Materials and process issues in the fabrication of high-performance HgCdTe infrared detectors, 0000 (7 April 1999); doi: 10.1117/12.344589
Proc. SPIE 3629, Comparison of mercury cadmium telluride LPE layers growth from Te-rich solution on (111)Cd0.95Zn0.05Te and (211)Cd0.95Zn0.05Te, 0000 (7 April 1999); doi: 10.1117/12.344590
Quantum Well Infrared Photodetectors I
Proc. SPIE 3629, Device physics and focal plane array applications of QWIP and MCT, 0000 (7 April 1999); doi: 10.1117/12.344591
Proc. SPIE 3629, Optimizing electron-photon coupling in quantum well infrared photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344592
Proc. SPIE 3629, Generation-recombination noise in multiple quantum well infrared photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344548
Proc. SPIE 3629, Characteristics of a superlattice infrared detector and comparison with QWIP, 0000 (7 April 1999); doi: 10.1117/12.344550
Quantum Well Infrared Photodetectors II
Proc. SPIE 3629, Broadband quantum well infrared photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344551
Proc. SPIE 3629, Multicolor 4- to 20-um InP-based quantum well infrared photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344552
Proc. SPIE 3629, Pixelless infrared imaging devices based on the integration of an n-type quantum well infrared photodetector with a near-infrared light-emitting diode, 0000 (7 April 1999); doi: 10.1117/12.344553
Proc. SPIE 3629, Carrier relaxation process of V-grooved AlGaAs/GaAs quantum wire modified by selective implantation-induced intermixing, 0000 (7 April 1999); doi: 10.1117/12.344554
Photodiodes for Ultraviolet Detection I
Proc. SPIE 3629, Materials-theory-based device modeling for III-nitride devices, 0000 (7 April 1999); doi: 10.1117/12.344555
Proc. SPIE 3629, AlxGa1-xN p-i-n photodiodes on sapphire substrates, 0000 (7 April 1999); doi: 10.1117/12.344556
Photodiodes for Ultraviolet Detection II
Proc. SPIE 3629, AlGaN-based photodetectors for solar UV applications, 0000 (7 April 1999); doi: 10.1117/12.344557
Proc. SPIE 3629, Electrical characterization of AlxGa1-xN for UV photodetector applications, 0000 (7 April 1999); doi: 10.1117/12.344558
Infrared Detectors and Materials III
Proc. SPIE 3629, High-sensitivity visible-blind UV detectors made with organic semiconductors, 0000 (7 April 1999); doi: 10.1117/12.344559
Photodiodes for Ultraviolet Detection II
Proc. SPIE 3629, Solar-blind UV region and UV detector development objectives, 0000 (7 April 1999); doi: 10.1117/12.344560
Avalanche Photodiodes for Optoelectronics
Proc. SPIE 3629, Avalanche photodiodes for detection of eye-safe laser pulses, 0000 (7 April 1999); doi: 10.1117/12.344561
Proc. SPIE 3629, Epitaxial growth of HgCdTe 1.55-um avalanche photodiodes by molecular beam epitaxy, 0000 (7 April 1999); doi: 10.1117/12.344562
Proc. SPIE 3629, Avalanche photodetector in the GaSb/AlSb/InAs material system by molecular beam epitaxy, 0000 (7 April 1999); doi: 10.1117/12.344563
Proc. SPIE 3629, Modeling of the terahertz response of metal-semiconductor-metal photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344564
Resonant Cavity Photodetectors
Proc. SPIE 3629, High-performance InSb/In1-xAlxSb focal plane detector arrays grown by MBE, 0000 (7 April 1999); doi: 10.1117/12.344565
Proc. SPIE 3629, High-speed high-efficiency resonant-cavity-enhanced photodiodes, 0000 (7 April 1999); doi: 10.1117/12.344566
Proc. SPIE 3629, NIR resonant-cavity-enhanced InP/InGaAs strained quantum well interband photodetector, 0000 (7 April 1999); doi: 10.1117/12.344568
Proc. SPIE 3629, Ultrafast photodetectors with near-unity quantum efficiency, 0000 (7 April 1999); doi: 10.1117/12.344569
Infrared Detectors and Materials III
Proc. SPIE 3629, InGaAs versus HgCdTe for short-wavelength infrared applications, 0000 (7 April 1999); doi: 10.1117/12.344570
Proc. SPIE 3629, Growth of InAsSb alloys on GaAs and Si substrates for uncooled infrared photodetector applications, 0000 (7 April 1999); doi: 10.1117/12.344571
Proc. SPIE 3629, Characterization of self-assembled InGaAs/InGaP quantum dot mid-infrared photoconductive detectors grown by low-pressure MOCVD, 0000 (7 April 1999); doi: 10.1117/12.344572
Proc. SPIE 3629, Demonstration of InAsSb/AlInSb double-heterostructure detectors for room temperature operation in the 5- to 8-um wavelength range, 0000 (7 April 1999); doi: 10.1117/12.344573
Proc. SPIE 3629, SIN tunnel junction as a temperature sensor, 0000 (7 April 1999); doi: 10.1117/12.344574
Materials Characterization
Proc. SPIE 3629, Process monitoring of semiconductor thin films and interfaces by spectroellipsometry, 0000 (7 April 1999); doi: 10.1117/12.344575
Proc. SPIE 3629, Internal stress around micropipes in 6H-SiC substrates, 0000 (7 April 1999); doi: 10.1117/12.344576
Proc. SPIE 3629, Effect of thermal annealing on the band-edge absorption spectrum of arsenic-ion-implanted GaAs, 0000 (7 April 1999); doi: 10.1117/12.344577
Proc. SPIE 3629, Photoreflection spectrum on Si-surface-delta-doped GaAs, 0000 (7 April 1999); doi: 10.1117/12.344579
Poster Session
Proc. SPIE 3629, HgCdTe photodiode passivated with a wide-bandgap epitaxial layer, 0000 (7 April 1999); doi: 10.1117/12.344580
Proc. SPIE 3629, Influence of the c-axis orientation on the optical properties of thin CdS thin films formed by laser ablation, 0000 (7 April 1999); doi: 10.1117/12.344581
Proc. SPIE 3629, Near-infrared photodetectors based on a HgInTe-semiconductor compound, 0000 (7 April 1999); doi: 10.1117/12.344582
Proc. SPIE 3629, Electronic structure and intersubband absorption in p-doped twinning superlattices, 0000 (7 April 1999); doi: 10.1117/12.344583
Proc. SPIE 3629, Modeling of MSM photodetectors, 0000 (7 April 1999); doi: 10.1117/12.344585
Photodiodes for Ultraviolet Detection II
Proc. SPIE 3629, Schottky MSM photodetectors on GaN films grown on sapphire by lateral epitaxial overgrowth, 0000 (7 April 1999); doi: 10.1117/12.344586
Infrared Detectors and Materials I
Proc. SPIE 3629, Lateral epitaxial overgrowth for defect-free GaN substrates, 0000 (7 April 1999); doi: 10.1117/12.344587
Photodiodes for Ultraviolet Detection I
Proc. SPIE 3629, UV Schottky-barrier detector development for possible Air Force applications, 0000 (7 April 1999); doi: 10.1117/12.344588
Infrared Detectors and Materials I
Proc. SPIE 3629, Roadmap of semiconductor infrared lasers and detectors for the 21st century, 0000 (7 April 1999); doi: 10.1117/12.344549
Back to Top