PROCEEDINGS VOLUME 3630
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES | 23-29 JANUARY 1999
Silicon-based Optoelectronics
IN THIS VOLUME

0 Sessions, 27 Papers, 0 Presentations
OPTOELECTRONICS '99 - INTEGRATED OPTOELECTRONIC DEVICES
23-29 January 1999
San Jose, CA, United States
Photonic Integration on Silicon I
Proc. SPIE 3630, Process technologies of MPACVD planar waveguide devices and fiber attachment, 0000 (19 March 1999); doi: 10.1117/12.342778
Proc. SPIE 3630, Mode-selective coupling structures for monolithic integrated waveguide-detector systems, 0000 (19 March 1999); doi: 10.1117/12.342788
Proc. SPIE 3630, Monolithic integration of III-V materials and devices on silicon, 0000 (19 March 1999); doi: 10.1117/12.342796
Proc. SPIE 3630, SiGe-based dual-wavelength demultiplexers and polarization splitters, 0000 (19 March 1999); doi: 10.1117/12.342799
Proc. SPIE 3630, Single and coupled silicon Fabry-Perot filters for WDM channel monitoring, 0000 (19 March 1999); doi: 10.1117/12.342800
Silicon-based Photodetectors
Proc. SPIE 3630, Photodetectors for 1.3-um and 1.55-um wavelengths using SiGe undulating MQWs on SOI substrates, 0000 (19 March 1999); doi: 10.1117/12.342801
Proc. SPIE 3630, Silicon-on-insulator resonant cavity photodiode without a slow carrier diffusion tail, 0000 (19 March 1999); doi: 10.1117/12.342802
Proc. SPIE 3630, Near-infrared 16-pixel linear array based on polycrystalline Ge on Si, 0000 (19 March 1999); doi: 10.1117/12.342803
Proc. SPIE 3630, Mid-infrared silicon/germanium focal plane detector arrays, 0000 (19 March 1999); doi: 10.1117/12.342804
Proc. SPIE 3630, Monolithic SiGe/Si quantum well sensor circuit for the 8- to 12-um band, 0000 (19 March 1999); doi: 10.1117/12.342779
Proc. SPIE 3630, Mid-infrared absorption in self-assembled Ge quantum dots grown on Si substrate, 0000 (19 March 1999); doi: 10.1117/12.342780
Poster Session
Proc. SPIE 3630, Multimicron dimension optical p-i-n modulators in silicon-on-insulator, 0000 (19 March 1999); doi: 10.1117/12.342781
Photonic Integration on Silicon II
Proc. SPIE 3630, Simulation studies of a <beta>-SiC-on-insulator Pockels phase modulator, 0000 (19 March 1999); doi: 10.1117/12.342782
Proc. SPIE 3630, Thermal management of ultrathin SOI devices: effects of phonon confinement, 0000 (19 March 1999); doi: 10.1117/12.342783
Silicon Light Sources
Proc. SPIE 3630, Silicon interference filters and Bragg reflectors for active and passive integrated optoelectronic components, 0000 (19 March 1999); doi: 10.1117/12.342784
Proc. SPIE 3630, Strong violet light emission from Ge+-implanted SiO2 layers, 0000 (19 March 1999); doi: 10.1117/12.342785
Proc. SPIE 3630, SiGe-based light-emitting diodes, 0000 (19 March 1999); doi: 10.1117/12.342786
Proc. SPIE 3630, Optical properties of Si-Ge-C nanostructures deposited by MBE, 0000 (19 March 1999); doi: 10.1117/12.342787
Poster Session
Proc. SPIE 3630, Active Y-switch based on an asymmetrical BMFET device, 0000 (19 March 1999); doi: 10.1117/12.342789
Proc. SPIE 3630, Thick polysilicon surface-micromachined optically sensed accelerometer, 0000 (19 March 1999); doi: 10.1117/12.342790
Proc. SPIE 3630, Arrayed waveguide grating demultiplexers: a new efficient numerical analysis approach, 0000 (19 March 1999); doi: 10.1117/12.342791
Proc. SPIE 3630, Converting SiO2 into crystalline Si for Si-based optoelectronics, 0000 (19 March 1999); doi: 10.1117/12.342792
Proc. SPIE 3630, 1850 A/W responsivity in optically controlled MOSFET by illumination of 1.5 um wavelength light, 0000 (19 March 1999); doi: 10.1117/12.342793
Proc. SPIE 3630, Leakage current reduction of metal-semiconductor-metal photodetectors by using a thin interfacial silicon dioxide layer, 0000 (19 March 1999); doi: 10.1117/12.342794
Proc. SPIE 3630, Relaxed GeSi alloy grown on low-temperature buffers by MBE, 0000 (19 March 1999); doi: 10.1117/12.342795
Photonic Integration on Silicon II
Proc. SPIE 3630, Loss measurements for <beta>-SiC-on-insulator waveguides for high-speed silicon-based photonic devices, 0000 (19 March 1999); doi: 10.1117/12.342797
Proc. SPIE 3630, Si/Si1-xGex waveguide components for WDM demultiplexing, 0000 (19 March 1999); doi: 10.1117/12.342798
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