PROCEEDINGS VOLUME 3676
MICROLITHOGRAPHY '99 | 14-19 MARCH 1999
Emerging Lithographic Technologies III
MICROLITHOGRAPHY '99
14-19 March 1999
Santa Clara, CA, United States
X-Ray Lithography I
Proc. SPIE 3676, Cost analysis on the next-generation lithography technology, 0000 (25 June 1999); doi: 10.1117/12.351075
Proc. SPIE 3676, Advanced refractory-metal and process technology for the fabrication of x-ray masks, 0000 (25 June 1999); doi: 10.1117/12.351107
Proc. SPIE 3676, Imaging capabilities of proximity x-ray lithography at 70-nm ground rules, 0000 (25 June 1999); doi: 10.1117/12.351118
X-Ray Lithography II
Proc. SPIE 3676, Characteristics of sputtered TaX absorbers for x-ray mask, 0000 (25 June 1999); doi: 10.1117/12.351128
Proc. SPIE 3676, UVN2-negative chemically amplified resist optimization for x-ray mask fabrication, 0000 (25 June 1999); doi: 10.1117/12.351137
Proc. SPIE 3676, Novel fiducial grid for x-ray masks, 0000 (25 June 1999); doi: 10.1117/12.351158
Proc. SPIE 3676, Sub-40-nm pattern replication with +/- 20% process latitude by soft-contact x-ray lithography, 0000 (25 June 1999); doi: 10.1117/12.351076
E-Beam Technology
Proc. SPIE 3676, Lithographic analysis of multipass gray writing strategy for electron-beam pattern generation, 0000 (25 June 1999); doi: 10.1117/12.351081
Proc. SPIE 3676, Geometrical correction of the e-beam proximity effect for raster scan systems, 0000 (25 June 1999); doi: 10.1117/12.351082
Proc. SPIE 3676, Heating of x-ray masks during e-beam writing, 0000 (25 June 1999); doi: 10.1117/12.351083
Proc. SPIE 3676, Low-energy e-beam proximity projection lithography, 0000 (25 June 1999); doi: 10.1117/12.351084
SCALPEL Mask Modeling and Manufacturing
Proc. SPIE 3676, Finite element modeling of SCALPEL masks, 0000 (25 June 1999); doi: 10.1117/12.351085
Proc. SPIE 3676, Commercial manufacturing of SCALPEL mask blanks, 0000 (25 June 1999); doi: 10.1117/12.351086
Proc. SPIE 3676, Stress mapping techniques for the SCALPEL mask membrane system, 0000 (25 June 1999); doi: 10.1117/12.351087
Proc. SPIE 3676, Production of SCALPEL masks in a commercial mask facility, 0000 (25 June 1999); doi: 10.1117/12.351088
SCALPEL High-Throughput System
Proc. SPIE 3676, Space-charge results from the SCALPEL proof-of-concept system, 0000 (25 June 1999); doi: 10.1117/12.351090
Proc. SPIE 3676, Writing strategy for a high-throughput SCALPEL system, 0000 (25 June 1999); doi: 10.1117/12.351091
Proc. SPIE 3676, Electron optical analysis of SCALPEL writing strategy, 0000 (25 June 1999); doi: 10.1117/12.351092
Proc. SPIE 3676, Resist characteristics with direct-write electron beam and SCALPEL exposure system, 0000 (25 June 1999); doi: 10.1117/12.351094
EUV Lithography I
Proc. SPIE 3676, EUV lithography research program at ASET, 0000 (25 June 1999); doi: 10.1117/12.351095
Proc. SPIE 3676, Extended-source interferometry for at-wavelength testing of EUV optics, 0000 (25 June 1999); doi: 10.1117/12.351096
Proc. SPIE 3676, High-power plasma discharge source at 13.5 nm and 11.4 nm for EUV lithography, 0000 (25 June 1999); doi: 10.1117/12.351098
EUV Lithography II
Proc. SPIE 3676, EUV interferometric lithography for resist characterization, 0000 (25 June 1999); doi: 10.1117/12.351099
Proc. SPIE 3676, Mask topography simulation for EUV lithography, 0000 (25 June 1999); doi: 10.1117/12.351100
Proc. SPIE 3676, Actinic EUVL mask blank defect inspection system, 0000 (25 June 1999); doi: 10.1117/12.351101
Proc. SPIE 3676, EUV mask patterning approaches, 0000 (25 June 1999); doi: 10.1117/12.351102
Novel Lithographic and Optical Techniques
Proc. SPIE 3676, Hot electron emission lithography, 0000 (25 June 1999); doi: 10.1117/12.351103
Proc. SPIE 3676, Zone-plate array lithography (ZPAL): a new maskless approach, 0000 (25 June 1999); doi: 10.1117/12.351104
Proc. SPIE 3676, Sub-100-nm pattern fabrication using LB resist and e-beam or synchrotron radiation excited plasma, 0000 (25 June 1999); doi: 10.1117/12.351105
Proc. SPIE 3676, Optical materials and coatings at 157 nm, 0000 (25 June 1999); doi: 10.1117/12.351106
Proc. SPIE 3676, Design and development of thin film materials for 157-nm and VUV wavelengths: APSM, binary masking, and optical coatings applications, 0000 (25 June 1999); doi: 10.1117/12.351108
Proc. SPIE 3676, Numerical analysis of high-resolution microlithography with thermoresist, 0000 (25 June 1999); doi: 10.1117/12.351109
Proc. SPIE 3676, Nonlinear processes to extend interferometric lithography, 0000 (25 June 1999); doi: 10.1117/12.351110
Point X-Ray and EUV Sources
Proc. SPIE 3676, Development of a 0.1 micron linewidth fabrication process for x-ray lithography with a laser plasma source, 0000 (25 June 1999); doi: 10.1117/12.351111
Proc. SPIE 3676, Emission from a gas puff target irradiated with a Nd:YAG laser for EUV and x-ray lithography, 0000 (25 June 1999); doi: 10.1117/12.351112
Proc. SPIE 3676, Vacuum spark and spherical pinch x-ray/EUV point sources, 0000 (25 June 1999); doi: 10.1117/12.351113
Proc. SPIE 3676, X-ray and EUV laser-plasma sources based on cryogenic liquid-jet target, 0000 (25 June 1999); doi: 10.1117/12.351114
Poster Session
Proc. SPIE 3676, Self-supporting tantalum masks for deep x-ray lithography with synchrotron radiation, 0000 (25 June 1999); doi: 10.1117/12.351115
Proc. SPIE 3676, Predicting mechanical distortions in x-ray masks, 0000 (25 June 1999); doi: 10.1117/12.351116
Proc. SPIE 3676, Advanced negative i-line resist development on metal surfaces for next-generation lithography mask fabrication, 0000 (25 June 1999); doi: 10.1117/12.351117
Proc. SPIE 3676, X-ray mask defect repair optimization, 0000 (25 June 1999); doi: 10.1117/12.351119
Proc. SPIE 3676, Application of two-wavelength optical heterodyne alignment system in XS-1, 0000 (25 June 1999); doi: 10.1117/12.351120
Proc. SPIE 3676, Evaluation of photoacid generators in chemically amplified resists for x-ray lithography using an on-wafer photoacid determination technique, 0000 (25 June 1999); doi: 10.1117/12.351121
Proc. SPIE 3676, MOSCASEL: a total solution to electron-beam lithography simulation, 0000 (25 June 1999); doi: 10.1117/12.351122
Proc. SPIE 3676, Proximity effects correction in real time, 0000 (25 June 1999); doi: 10.1117/12.351123
Proc. SPIE 3676, Production data from a Leica ZBA31H+ shaped e-beam mask writer located at the Photronics facility, Manchester, England, 0000 (25 June 1999); doi: 10.1117/12.351124
Proc. SPIE 3676, Optimization of alignment key in electron-beam lithography, 0000 (25 June 1999); doi: 10.1117/12.351125
Proc. SPIE 3676, Simulation of resist heating using TEMPTATION software with different models of electron-beam energy deposition, 0000 (25 June 1999); doi: 10.1117/12.351126
Proc. SPIE 3676, Overlay error budgets for a high-throughput SCALPEL system, 0000 (25 June 1999); doi: 10.1117/12.351127
Proc. SPIE 3676, Modal analysis of the SCALPEL mask using experimental and numerical methods, 0000 (25 June 1999); doi: 10.1117/12.351129
Proc. SPIE 3676, Low-defect reflective mask blanks for extreme ultraviolet lithography, 0000 (25 June 1999); doi: 10.1117/12.351130
Proc. SPIE 3676, Simulation on a new reflection type attenuated phase-shifting mask for extreme ultraviolet lithography, 0000 (25 June 1999); doi: 10.1117/12.351131
Proc. SPIE 3676, Computation of reflected images from extreme ultraviolet masks, 0000 (25 June 1999); doi: 10.1117/12.351132