PROCEEDINGS VOLUME 3677
MICROLITHOGRAPHY '99 | 14-19 MARCH 1999
Metrology, Inspection, and Process Control for Microlithography XIII
MICROLITHOGRAPHY '99
14-19 March 1999
Santa Clara, CA, United States
Scanning Probe Microscopy I
Proc. SPIE 3677, Application of atomic force microscopy to lithography characterization and control, 0000 (14 June 1999); doi: 10.1117/12.350804
Proc. SPIE 3677, High-aspect-ratio depth determination using nondestructive AFM, 0000 (14 June 1999); doi: 10.1117/12.350814
Scanning Probe Microscopy II
Proc. SPIE 3677, Dimensional metrology with the NIST calibrated atomic force microscope, 0000 (14 June 1999); doi: 10.1117/12.350822
Proc. SPIE 3677, Quantitative line edge roughness characterization for sub-0.25-um DUV lithography, 0000 (14 June 1999); doi: 10.1117/12.350833
Proc. SPIE 3677, Evaluation of atomic force microscopy: comparison with electrical CD metrology and low-voltage scanning electron microscopy, 0000 (14 June 1999); doi: 10.1117/12.350853
Proc. SPIE 3677, Metrology methods for quantifying edge roughness: II, 0000 (14 June 1999); doi: 10.1117/12.350860
Registration and Overlay I
Proc. SPIE 3677, Measuring fab overlay programs, 0000 (14 June 1999); doi: 10.1117/12.350871
Proc. SPIE 3677, Supersparse overlay sampling plans: an evaluation of methods and algorithms for optimizing overlay quality control and metrology tool throughput, 0000 (14 June 1999); doi: 10.1117/12.350780
Proc. SPIE 3677, Characterizing lens distortion to overlay accuracy by using fine measurement pattern, 0000 (14 June 1999); doi: 10.1117/12.350790
Proc. SPIE 3677, Focus and edge detection algorithms and their relevance to the development of an optical overlay calibration standard, 0000 (14 June 1999); doi: 10.1117/12.350794
Proc. SPIE 3677, Alignment and overlay metrology issues for copper/low-K dual-damascene interconnect, 0000 (14 June 1999); doi: 10.1117/12.350797
Proc. SPIE 3677, Algorithm implementation and techniques for providing more-reliable overlay measurements and better tracking of the shallow-trench isolation (STI) process, 0000 (14 June 1999); doi: 10.1117/12.350798
Proc. SPIE 3677, Two-dimensional calibration artifact and measurement methodology, 0000 (14 June 1999); doi: 10.1117/12.350799
Optical Metrology: Critical Dimension Measurement
Proc. SPIE 3677, Distinguishing dose from defocus for in-line lithography control, 0000 (14 June 1999); doi: 10.1117/12.350800
Proc. SPIE 3677, Scatterometry for post-etch polysilicon gate metrology, 0000 (14 June 1999); doi: 10.1117/12.350801
Proc. SPIE 3677, Specular spectroscopic scatterometry in DUV lithography, 0000 (14 June 1999); doi: 10.1117/12.350802
Proc. SPIE 3677, Instrumentation of a deep-UV microscope resolving less than 0.15 um, 0000 (14 June 1999); doi: 10.1117/12.350803
Proc. SPIE 3677, Sensitivity analysis of fitting for scatterometry, 0000 (14 June 1999); doi: 10.1117/12.350805
Proc. SPIE 3677, Automatic in-situ focus monitor using line-shortening effect, 0000 (14 June 1999); doi: 10.1117/12.350806
Proc. SPIE 3677, Understanding optical end of line metrology, 0000 (14 June 1999); doi: 10.1117/12.350807
Registration and Overlay II
Proc. SPIE 3677, New approach to correlating overlay and yield, 0000 (14 June 1999); doi: 10.1117/12.350808
Proc. SPIE 3677, Characterization and optimization of overlay target design for shallow-trench isolation (STI) process, 0000 (14 June 1999); doi: 10.1117/12.350809
Proc. SPIE 3677, Comparison of optical, SEM, and AFM overlay measurement, 0000 (14 June 1999); doi: 10.1117/12.350810
Proc. SPIE 3677, Characterization of overlay tolerance requirements for via to metal alignment, 0000 (14 June 1999); doi: 10.1117/12.350811
Process Characterization: Stepper
Proc. SPIE 3677, Wafer mapping for stepper effects characterization, 0000 (14 June 1999); doi: 10.1117/12.350812
Proc. SPIE 3677, Quantification of wafer printability improvements with scanning steppers using new flatness metrics, 0000 (14 June 1999); doi: 10.1117/12.350813
Proc. SPIE 3677, Effect of the control of global planarity of intermetal dielectric layers on the lithographic process window, 0000 (14 June 1999); doi: 10.1117/12.350815
Scanning Electron Microscopy: CD SEM
Proc. SPIE 3677, CD-SEM precision: improved procedure and analysis, 0000 (14 June 1999); doi: 10.1117/12.350816
Proc. SPIE 3677, Multiple CD-SEM matching for 0.18-um lines/spaces at different exposure conditions, 0000 (14 June 1999); doi: 10.1117/12.350817
Proc. SPIE 3677, Characteristics of accuracy for CD metrology, 0000 (14 June 1999); doi: 10.1117/12.350818
Proc. SPIE 3677, Contact hole characterization by SEM waveform analysis, 0000 (14 June 1999); doi: 10.1117/12.350819
Proc. SPIE 3677, CD-SEM edge width applications and analysis, 0000 (14 June 1999); doi: 10.1117/12.350820
Thin Film Metrology
Proc. SPIE 3677, Production metrology and control of color filter array photolithography for CMOS imagers, 0000 (14 June 1999); doi: 10.1117/12.350821
Process Control/Optimization I
Proc. SPIE 3677, Ultrasonic monitoring of photoresist processing, 0000 (14 June 1999); doi: 10.1117/12.350823
Proc. SPIE 3677, Real-time methodologies for monitoring airborne molecular contamination in modern DUV photolithography facilities, 0000 (14 June 1999); doi: 10.1117/12.350824
Proc. SPIE 3677, Algorithm for controlling objective lens temperature, 0000 (14 June 1999); doi: 10.1117/12.350825
Proc. SPIE 3677, Improved wafer stepper alignment performance using an enhanced phase grating alignment system, 0000 (14 June 1999); doi: 10.1117/12.350826
Proc. SPIE 3677, CD error budget analysis for 0.18-um inlaid trench lithography, 0000 (14 June 1999); doi: 10.1117/12.350827
Process Control/Optimization II
Proc. SPIE 3677, Lithography performance indicator (LPI) and a new lumped parameter to derive resist images from aerial images, 0000 (14 June 1999); doi: 10.1117/12.350828
Proc. SPIE 3677, Data analysis for photolithography, 0000 (14 June 1999); doi: 10.1117/12.350829
Proc. SPIE 3677, Application of model-based lithographic process control for cost-effective IC manufacturing at 0.13 um and beyond, 0000 (14 June 1999); doi: 10.1117/12.350830
Proc. SPIE 3677, Parameter extraction framework for DUV lithography simulation, 0000 (14 June 1999); doi: 10.1117/12.350831
Proc. SPIE 3677, Antireflective coating optimization techniques for sub-0.2-um geometries, 0000 (14 June 1999); doi: 10.1117/12.350832
Proc. SPIE 3677, Factors that determine the optimum reduction factor for wafer steppers, 0000 (14 June 1999); doi: 10.1117/12.350834
Defect I
Proc. SPIE 3677, Productive application of voltage contrast for detection of optically undetectable defects, 0000 (14 June 1999); doi: 10.1117/12.350835
Proc. SPIE 3677, Method for enhancing topography and material contrast in automatic SEM review, 0000 (14 June 1999); doi: 10.1117/12.350836
Proc. SPIE 3677, Methodology for yield enhancement based on the analysis of defects at the lithographic step, 0000 (14 June 1999); doi: 10.1117/12.350837
Proc. SPIE 3677, New patterned wafer inspection system with the function to classify fatal defects, 0000 (14 June 1999); doi: 10.1117/12.350838
Proc. SPIE 3677, Defect reduction methodology in the lithography module, 0000 (14 June 1999); doi: 10.1117/12.350839
Defect II
Proc. SPIE 3677, Application of spatial signature analysis to electrical test data: validation study, 0000 (14 June 1999); doi: 10.1117/12.350840
Proc. SPIE 3677, Using laser surface scanning and bare wafer review to diagnose photolithography track developer process-induced defect issues, 0000 (14 June 1999); doi: 10.1117/12.350841
Proc. SPIE 3677, Reduction of postdevelop defects and process times for DUV lithography, 0000 (14 June 1999); doi: 10.1117/12.350842
Proc. SPIE 3677, Post-pattern-inspection strategy, 0000 (14 June 1999); doi: 10.1117/12.350843
Proc. SPIE 3677, Analysis of adhesion behavior of microresist pattern by direct collapse method with atomic force microscope tip, 0000 (14 June 1999); doi: 10.1117/12.350844
New Technology/New Approaches to Metrology
Proc. SPIE 3677, 2001 and beyond: a challenge for metrology, 0000 (14 June 1999); doi: 10.1117/12.350845
Proc. SPIE 3677, Intercomparison of SEM, AFM, and electrical linewidths, 0000 (14 June 1999); doi: 10.1117/12.350846
Proc. SPIE 3677, Telepresence: a new paradigm for industrial and scientific collaboration, 0000 (14 June 1999); doi: 10.1117/12.350847