PROCEEDINGS VOLUME 3678
MICROLITHOGRAPHY '99 | 14-19 MARCH 1999
Advances in Resist Technology and Processing XVI
MICROLITHOGRAPHY '99
14-19 March 1999
Santa Clara, CA, United States
untitled
Proc. SPIE 3678, Chemically amplified resists: past, present, and future, 0000 (11 June 1999); doi: 10.1117/12.350143
Proc. SPIE 3678, Outlook for 157-nm resist design, 0000 (11 June 1999); doi: 10.1117/12.350200
ArF Materials I
Proc. SPIE 3678, Development of an incremental structural parameter model for predicting reactive ion etch rates of 193-nm photoresist polymer platforms, 0000 (11 June 1999); doi: 10.1117/12.350211
Proc. SPIE 3678, New polymers for 193-nm single-layer resists based on substituted cycloolefins/maleic anhydride resins, 0000 (11 June 1999); doi: 10.1117/12.350241
Proc. SPIE 3678, Design and development of high-performance 193-nm positive resist based on functionalized poly(cyclicolefins), 0000 (11 June 1999); doi: 10.1117/12.350251
ArF Materials II
Proc. SPIE 3678, Block copolymers as additives: a route to enhanced resist performance, 0000 (11 June 1999); doi: 10.1117/12.350144
Proc. SPIE 3678, Model study by FT-IR of the interaction of select cholate dissolution inhibitors with poly(norbornene-alt-maleic anhydride) and its derivatives, 0000 (11 June 1999); doi: 10.1117/12.350155
Proc. SPIE 3678, Carbon-rich cyclopolymers: their synthesis, etch resistance, and application to 193-nm microlithography, 0000 (11 June 1999); doi: 10.1117/12.350166
Materials and Process Characterization
Proc. SPIE 3678, NMR analysis of chemically amplified resist films, 0000 (11 June 1999); doi: 10.1117/12.350176
Proc. SPIE 3678, Physico-chemical properties of polymers for 193-nm lithography incorporating alicyclic norbornene-alt-maleic anhydride structures, 0000 (11 June 1999); doi: 10.1117/12.350186
Proc. SPIE 3678, New method for determination of the photoresist Dill parameters using spectroscopic ellipsometry, 0000 (11 June 1999); doi: 10.1117/12.350195
Proc. SPIE 3678, Experimental method for quantifying acid diffusion in chemically amplified resists, 0000 (11 June 1999); doi: 10.1117/12.350196
Proc. SPIE 3678, Electrical property study of line-edge roughness in top surface imaging process by silylation, 0000 (11 June 1999); doi: 10.1117/12.350197
Proc. SPIE 3678, Aerial image contrast using interferometric lithography: effect on line-edge roughness, 0000 (11 June 1999); doi: 10.1117/12.350198
Antireflection Strategies
Proc. SPIE 3678, Methacrylate resists and antireflective coatings for 193-nm lithography, 0000 (11 June 1999); doi: 10.1117/12.350199
Proc. SPIE 3678, Dual-layer inorganic SiON bottom ARC for 0.25-um DUV hard mask applications, 0000 (11 June 1999); doi: 10.1117/12.350201
Proc. SPIE 3678, Suppression of resist pattern deformation on SiON bottom antireflective layer in deep-UV lithography, 0000 (11 June 1999); doi: 10.1117/12.350202
Proc. SPIE 3678, Application of polysilanes for deep-UV antireflective coating, 0000 (11 June 1999); doi: 10.1117/12.350203
SLR and BLR Processes
Proc. SPIE 3678, Novel silicon-containing resists for EUV and 193-nm lithography, 0000 (11 June 1999); doi: 10.1117/12.350204
Proc. SPIE 3678, Optimization of 193-nm single-layer resists through statistical design, 0000 (11 June 1999); doi: 10.1117/12.350205
Proc. SPIE 3678, Novel 193-nm single-layer resist containing a multifunctional monomer, 0000 (11 June 1999); doi: 10.1117/12.350206
Proc. SPIE 3678, Bilayer silylation process for 193-nm lithography, 0000 (11 June 1999); doi: 10.1117/12.350208
BLR Processes with Material Issues and Applications
Proc. SPIE 3678, Resist outgassing as a function of differing photoadditives, 0000 (11 June 1999); doi: 10.1117/12.350209
Proc. SPIE 3678, Physical modeling of deprotection-induced thickness loss, 0000 (11 June 1999); doi: 10.1117/12.350210
Proc. SPIE 3678, Structural design of new alicyclic acrylate polymers with androstane moiety for 193-nm resist, 0000 (11 June 1999); doi: 10.1117/12.350212
Proc. SPIE 3678, Toward the ultimate storage device: the fabrication of an ultrahigh-density memory device with 193-nm lithography, 0000 (11 June 1999); doi: 10.1117/12.350213
Aspects in Photolithography
Proc. SPIE 3678, Effects of polymer structure on dissolution characteristics in chemically amplified 193-nm resists, 0000 (11 June 1999); doi: 10.1117/12.350214
Proc. SPIE 3678, Correlations between dissolution data and lithography of various resists, 0000 (11 June 1999); doi: 10.1117/12.350215
Proc. SPIE 3678, Progress of a CVD-based photoresist 193-nm lithography process, 0000 (11 June 1999); doi: 10.1117/12.350216
Poster Session
Proc. SPIE 3678, Considerations for the use of application-specific photoresists, 0000 (11 June 1999); doi: 10.1117/12.350217
Aspects in Photolithography
Proc. SPIE 3678, Edge lithography as a means of extending the limits of optical and nonoptical lithographic resolution, 0000 (11 June 1999); doi: 10.1117/12.350218
Materials Mechanisms
Proc. SPIE 3678, Mechanism of the Trefonas effect (polyphotolysis) in dissolution inhibition resists, 0000 (11 June 1999); doi: 10.1117/12.350219
Proc. SPIE 3678, Analysis of molecular diffusion in resist polymer films simulated by molecular dynamics, 0000 (11 June 1999); doi: 10.1117/12.350220
Proc. SPIE 3678, Effect of photoacid generators on the formation of residues in an organic BARC process, 0000 (11 June 1999); doi: 10.1117/12.350221
Proc. SPIE 3678, Lithographic properties of novel acetal-derivatized hydroxy styrene polymers, 0000 (11 June 1999); doi: 10.1117/12.350222
Poster Session
Proc. SPIE 3678, Microswelling-free negative resists for ArF excimer laser lithography utilizing acid-catalyzed intramolecular esterification, 0000 (11 June 1999); doi: 10.1117/12.350223
Proc. SPIE 3678, Chemically amplified resist based on the methacrylate polymer with 2-trimethylsilyl-2-propyl ester protecting group, 0000 (11 June 1999); doi: 10.1117/12.350224
Proc. SPIE 3678, Characterization and lithographic parameter extraction for the modified resists, 0000 (11 June 1999); doi: 10.1117/12.350225
Proc. SPIE 3678, Reactivity determination of carbon atoms on benzene rings of phenols, 0000 (11 June 1999); doi: 10.1117/12.350226
Proc. SPIE 3678, Developer concentration influence on DUV process, 0000 (11 June 1999); doi: 10.1117/12.350227
Proc. SPIE 3678, Chemically amplified negative resist optimized for high-resolution x-ray lithography, 0000 (11 June 1999); doi: 10.1117/12.350228
Proc. SPIE 3678, Photoresist silylation and "swelling": simulation using finite element analysis and physical boundary movement algorithms, 0000 (11 June 1999); doi: 10.1117/12.350229
Proc. SPIE 3678, Process characterization of 100-um-thick photoresist films, 0000 (11 June 1999); doi: 10.1117/12.350230
Proc. SPIE 3678, Controlled developing time for higher-resolution i-line photoresist, 0000 (11 June 1999); doi: 10.1117/12.350231
Proc. SPIE 3678, Contrast enhancement by alkali decomposable additives in chemically amplified negative i-line resists, 0000 (11 June 1999); doi: 10.1117/12.350232
Proc. SPIE 3678, Positive ArF resist with 2EAdMA/GBLMA resin system, 0000 (11 June 1999); doi: 10.1117/12.350233
Proc. SPIE 3678, Design of a new bottom antireflective coating composition for KrF resist, 0000 (11 June 1999); doi: 10.1117/12.350234
Proc. SPIE 3678, Optimizing a DUV positive resist for metal layers, 0000 (11 June 1999); doi: 10.1117/12.350235
Proc. SPIE 3678, Acid diffusion and evaporation in chemically amplified resists, 0000 (11 June 1999); doi: 10.1117/12.350236
Proc. SPIE 3678, Toward individually addressable nanometer-size surface pixels: ultrathin dendrimer films as resists for scanning probe lithography, 0000 (11 June 1999); doi: 10.1117/12.350237
Proc. SPIE 3678, Bottom antireflective coatings for ArF, KrF, and i-line applications: a comparison of theory, design, and lithographic aspects, 0000 (11 June 1999); doi: 10.1117/12.350238
Proc. SPIE 3678, Chemical aspects of silicon-containing bilayer resists, 0000 (11 June 1999); doi: 10.1117/12.350239
Proc. SPIE 3678, Comparison of measured sidewall roughness for positive-tone chemically amplified resists exposed by x-ray lithography, 0000 (11 June 1999); doi: 10.1117/12.350240
Proc. SPIE 3678, Chemically amplified resists using the absorption band shift method in conjunction with alicyclic compounds for ArF excimer laser lithography, 0000 (11 June 1999); doi: 10.1117/12.350242