PROCEEDINGS VOLUME 3679
MICROLITHOGRAPHY '99 | 14-19 MARCH 1999
Optical Microlithography XII
MICROLITHOGRAPHY '99
14-19 March 1999
Santa Clara, CA, United States
Enhancement Techniques I: PSM
Proc. SPIE 3679, Practicing extension of 248-nm DUV optical lithography using trim-mask PSM, 0000 (26 July 1999); doi: 10.1117/12.354297
Proc. SPIE 3679, Effects of phase-shift masks on across-field linewidth control, 0000 (26 July 1999); doi: 10.1117/12.354332
Proc. SPIE 3679, Alternating phase-shifted mask for logic gate levels, design, and mask manufacturing, 0000 (26 July 1999); doi: 10.1117/12.354344
Proc. SPIE 3679, Design of 200-nm, 170-nm, and 140-nm DUV contact sweeper high-transmission attenuating phase-shift mask: II. Experimental results, 0000 (26 July 1999); doi: 10.1117/12.354355
Proc. SPIE 3679, Imaging contrast improvement for 160-nm line features using subresolution assist features with binary, six percent ternary attenuated phase-shift mask with process-tuned resist, 0000 (26 July 1999); doi: 10.1117/12.354366
Image Quality I
Proc. SPIE 3679, Application of blazed gratings for determination of equivalent primary azimuthal aberrations, 0000 (26 July 1999); doi: 10.1117/12.354375
Proc. SPIE 3679, Novel aberration monitor for optical lithography, 0000 (26 July 1999); doi: 10.1117/12.354385
Proc. SPIE 3679, Mathematical treatment of condenser aberrations and their impact on linewidth control, 0000 (26 July 1999); doi: 10.1117/12.354395
Proc. SPIE 3679, Measurement of effective source shift using a grating-pinhole mask, 0000 (26 July 1999); doi: 10.1117/12.354402
Proc. SPIE 3679, Performance of a phase-shift focus monitor reticle designed for 193-nm use, 0000 (26 July 1999); doi: 10.1117/12.354298
Enhancement Techniques II: Process Optimization
Proc. SPIE 3679, Design, reticle, and wafer OPC manufacturability for the 0.18-um lithography generation, 0000 (26 July 1999); doi: 10.1117/12.354306
Proc. SPIE 3679, Verifying the "correctness" of your optical proximity correction designs, 0000 (26 July 1999); doi: 10.1117/12.354315
Proc. SPIE 3679, Comparison study for sub-150-nm DUV lithography between high-NA KrF and ArF lithography, 0000 (26 July 1999); doi: 10.1117/12.354326
Poster Session
Proc. SPIE 3679, Illumination condition and mask bias for 0.15-um pattern with KrF and ArF lithography, 0000 (26 July 1999); doi: 10.1117/12.354327
Lithography Modeling and Overlay
Proc. SPIE 3679, Understanding systematic and random CD variations using predictive modeling techniques, 0000 (26 July 1999); doi: 10.1117/12.354328
Proc. SPIE 3679, Variable-threshold resist models for lithography simulation, 0000 (26 July 1999); doi: 10.1117/12.354329
Proc. SPIE 3679, Matching simulation and experiment for chemically amplified resists, 0000 (26 July 1999); doi: 10.1117/12.354330
Proc. SPIE 3679, Method to budget and optimize total device overlay, 0000 (26 July 1999); doi: 10.1117/12.354331
Proc. SPIE 3679, High-speed alignment simulator for Nikon steppers, 0000 (26 July 1999); doi: 10.1117/12.354333
CD Control and Mask Error Factor
Proc. SPIE 3679, Characterization of CD control for sub-0.18-um lithographic patterning, 0000 (26 July 1999); doi: 10.1117/12.354335
Proc. SPIE 3679, CD control comparison for sub-0.18-um patterning using 248-nm lithography and strong resolution enhancement techniques, 0000 (26 July 1999); doi: 10.1117/12.354336
Proc. SPIE 3679, CD uniformity consideration for DUV step and scan tools, 0000 (26 July 1999); doi: 10.1117/12.354337
Proc. SPIE 3679, Mask error factor: causes and implications for process latitude, 0000 (26 July 1999); doi: 10.1117/12.354338
Proc. SPIE 3679, Impact of mask errors on full chip error budgets, 0000 (26 July 1999); doi: 10.1117/12.354339
193-nm Process Optimization
Proc. SPIE 3679, 193-nm lithography on a full-field scanner, 0000 (26 July 1999); doi: 10.1117/12.354340
Proc. SPIE 3679, Feasibility studies of ArF lithography for sub-130-nm lithography, 0000 (26 July 1999); doi: 10.1117/12.354341
Proc. SPIE 3679, Challenge to sub-0.1-um pattern fabrication using an alternating phase-shifting mask in ArF lithography, 0000 (26 July 1999); doi: 10.1117/12.354342
Proc. SPIE 3679, Optical extension at the 193-nm wavelength, 0000 (26 July 1999); doi: 10.1117/12.354343
Proc. SPIE 3679, Depth of focus enhancement for 193-nm window lithography with subresolution assist features, 0000 (26 July 1999); doi: 10.1117/12.354345
Image Quality II
Proc. SPIE 3679, Variations to the influence of lens aberration invoked with PSM and OAI, 0000 (26 July 1999); doi: 10.1117/12.354346
Proc. SPIE 3679, Feasibility of printing 0.1-um technology with optical lithography, 0000 (26 July 1999); doi: 10.1117/12.354347
Proc. SPIE 3679, Higher-order aberration measurement with printed patterns under extremely reduced sigma illumination, 0000 (26 July 1999); doi: 10.1117/12.354348
Proc. SPIE 3679, Flare impact on the intrafield CD control for sub-0.25-um patterning, 0000 (26 July 1999); doi: 10.1117/12.354349
Proc. SPIE 3679, Effect of negative-tone mask lithography on lens aberration phenomena, 0000 (26 July 1999); doi: 10.1117/12.354350
Enhancement Techniques III
Proc. SPIE 3679, Multilevel imaging system realizing k1=0.3 lithography, 0000 (26 July 1999); doi: 10.1117/12.354351
Proc. SPIE 3679, Resolution and DOF improvement through the use of square-shaped illumination, 0000 (26 July 1999); doi: 10.1117/12.354352
Proc. SPIE 3679, Assessment of synchronous filtering as an alternative to phase-shifting masks at k1=0.4, 0000 (26 July 1999); doi: 10.1117/12.354353
Proc. SPIE 3679, Customized off-axis illumination aperture filtering for sub-0.18-um KrF lithography, 0000 (26 July 1999); doi: 10.1117/12.354354
Proc. SPIE 3679, Combination of OPC and AttPSM for patterning sub-0.18-um logic devices, 0000 (26 July 1999); doi: 10.1117/12.354356
Exposure Tools and Subsystems (248-nm)
Proc. SPIE 3679, 0.7-NA DUV step-and-scan system for 150-nm imaging with improved overlay, 0000 (26 July 1999); doi: 10.1117/12.354357
Enhancement Techniques II: Process Optimization
Proc. SPIE 3679, New technique for optical lithography at low k-factors, 0000 (26 July 1999); doi: 10.1117/12.354358
Exposure Tools and Subsystems (248-nm)
Proc. SPIE 3679, 150-nm generation lithography equipment, 0000 (26 July 1999); doi: 10.1117/12.354359
Proc. SPIE 3679, Performance of 300-mm lithography tools in a pilot production line, 0000 (26 July 1999); doi: 10.1117/12.354360
Proc. SPIE 3679, Watt-level DUV generation by solid state laser for lithography, 0000 (26 July 1999); doi: 10.1117/12.354361
Exposure Tools (193 nm) and 157-nm Issues
Proc. SPIE 3679, ArF step-and-scan exposure system for 0.15-um and 0.13-um technology nodes, 0000 (26 July 1999); doi: 10.1117/12.354362
Proc. SPIE 3679, Performance of the ArF scanning exposure tool, 0000 (26 July 1999); doi: 10.1117/12.354363
Proc. SPIE 3679, Impact of pellicle damage on patterning characteristics in ArF lithography, 0000 (26 July 1999); doi: 10.1117/12.354364
Proc. SPIE 3679, Revisiting F2 laser for DUV microlithography, 0000 (26 July 1999); doi: 10.1117/12.354365
Poster Session
Proc. SPIE 3679, Integration of alternating phase-shift mask technology into optical proximity correction, 0000 (26 July 1999); doi: 10.1117/12.354367
Proc. SPIE 3679, Alternating PSM optimization using model-based OPC, 0000 (26 July 1999); doi: 10.1117/12.354368
Proc. SPIE 3679, Pattern asymmetries in phase-edge imaging, 0000 (26 July 1999); doi: 10.1117/12.354369
Proc. SPIE 3679, Clear-field alternating PSM for 193-nm lithography, 0000 (26 July 1999); doi: 10.1117/12.354370
Proc. SPIE 3679, Evaluating the potential of alternating phase-shift masks using lithography simulation, 0000 (26 July 1999); doi: 10.1117/12.354371
Proc. SPIE 3679, Full-depth optical proximity correction (FD-OPC) based on E-D forest, 0000 (26 July 1999); doi: 10.1117/12.354372
Proc. SPIE 3679, Resolution enhancement through optical proximity correction and stepper parameter optimization for 0.12-um mask pattern, 0000 (26 July 1999); doi: 10.1117/12.354373
Proc. SPIE 3679, Hierarchical processing for accurate optical proximity correction for 1-Gb DRAM metal layers, 0000 (26 July 1999); doi: 10.1117/12.354374
Proc. SPIE 3679, Systematic approach to correct critical patterns induced by the lithography process at the full-chip level, 0000 (26 July 1999); doi: 10.1117/12.354376