PROCEEDINGS VOLUME 3725
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS '98 | 12-16 OCTOBER 1998
International Conference on Solid State Crystals '98: Epilayers and Heterostructures in Optoelectronics and Semiconductor Technology
INTERNATIONAL CONFERENCE ON SOLID STATE CRYSTALS '98
12-16 October 1998
Zakopane, Poland
Thin Layers and Epitaxial Growth
Proc. SPIE 3725, Metal organic vapor phase epitaxy of GaN and lateral overgrowth, 0000 (8 April 1999); doi: 10.1117/12.344707
Proc. SPIE 3725, High-quality LEO growth and characterization of GaN films on Al2O3 and Si substrates, 0000 (8 April 1999); doi: 10.1117/12.344718
Proc. SPIE 3725, Growth of high-quality GaN and AlxGa1-xN layers by an MOVPE technique, 0000 (8 April 1999); doi: 10.1117/12.344729
Proc. SPIE 3725, Surface strain during homoepitaxy: growth and ion ablation of CdTe, 0000 (8 April 1999); doi: 10.1117/12.344740
Proc. SPIE 3725, Optical studies of amorphous and polycrystalline Zn3P2, 0000 (8 April 1999); doi: 10.1117/12.344751
Proc. SPIE 3725, Growth mechanism of KAP crystals: surface morphology of the (010) face, 0000 (8 April 1999); doi: 10.1117/12.344760
Proc. SPIE 3725, Reciprocal lattice mapping of InGaAs layers grown on InP(001) and GaAs(001) substrates, 0000 (8 April 1999); doi: 10.1117/12.344761
Proc. SPIE 3725, Method of radical beam epitaxy, 0000 (8 April 1999); doi: 10.1117/12.344762
Proc. SPIE 3725, Mechanisms of heteroepitaxial growth of the (Ba1-xSrx)TiO3//MgO(001) thin ferroelectric films, 0000 (8 April 1999); doi: 10.1117/12.344763
Proc. SPIE 3725, Liquid-phase epitaxial growth and characterization of In(Sb,Bi), 0000 (8 April 1999); doi: 10.1117/12.344708
Proc. SPIE 3725, Temperature dependence of energy bandgap of Zn1-xMgxSe strained epitaxial layers grown on GaAs, 0000 (8 April 1999); doi: 10.1117/12.344709
Proc. SPIE 3725, Beryllium doping in Al0.5Ga0.5As MBE layers, 0000 (8 April 1999); doi: 10.1117/12.344710
Proc. SPIE 3725, Vortex lattice pinning in a Ba0.64K0.36BiOy thick film, 0000 (8 April 1999); doi: 10.1117/12.344711
Proc. SPIE 3725, Electrodiffusion bonding of aluminum to glass, 0000 (8 April 1999); doi: 10.1117/12.344712
Proc. SPIE 3725, Influence of annealing on the morphology and phase composition of plasma-sprayed Ni/Al coatings, 0000 (8 April 1999); doi: 10.1117/12.344713
Crystalline Nanostructures and Films: Formation and Properties
Proc. SPIE 3725, Mechanical properties of fullerite and diamondlike carbon films using surface acoustic waves and nanoindentation, 0000 (8 April 1999); doi: 10.1117/12.344714
Proc. SPIE 3725, Time-resolved study of luminescence properties of porous silicon in micro- and nanosecond range, 0000 (8 April 1999); doi: 10.1117/12.344715
Proc. SPIE 3725, Structural studies of carbon nanotubes by wide-angle neutron scattering, 0000 (8 April 1999); doi: 10.1117/12.344716
Proc. SPIE 3725, Role of surface substances in excitation of porous silicon photoluminescence, 0000 (8 April 1999); doi: 10.1117/12.344717
Proc. SPIE 3725, Quantum chemical simulation of silicon nanostructures, 0000 (8 April 1999); doi: 10.1117/12.344719
Proc. SPIE 3725, Nature of long-lived photoexcited states in polydiacetylenes: the photoinduced absorption spectra of PDA-4BCMU, 0000 (8 April 1999); doi: 10.1117/12.344720
Structural, Optical, and Electrical Characterization of Crystalline Materials
Proc. SPIE 3725, Magnetophonon resonance as a method of studying the vertical and parallel transport in superlattices and MQW structures, 0000 (8 April 1999); doi: 10.1117/12.344721
Proc. SPIE 3725, Magnetic and magnetotransport properties of epitaxial MBE-grown Co/Cu multilayers, 0000 (8 April 1999); doi: 10.1117/12.344722
Proc. SPIE 3725, Electrical conductivity, ESR, and Raman scattering spectroscopy of undoped and B-doped diamond films grown by CVD method, 0000 (8 April 1999); doi: 10.1117/12.344723
Proc. SPIE 3725, Intersubband transitions in n-type quantum well systems, 0000 (8 April 1999); doi: 10.1117/12.344724
Proc. SPIE 3725, Laser modification of the electrical properties of vanadium oxide thin films, 0000 (8 April 1999); doi: 10.1117/12.344725
Proc. SPIE 3725, Influence of semiconductor surface condition on electrical and photoelectric properties of Al-Zn3P2 contacts, 0000 (8 April 1999); doi: 10.1117/12.344726
Proc. SPIE 3725, Photoinduced electron transfer process: quantum description, 0000 (8 April 1999); doi: 10.1117/12.344727
Proc. SPIE 3725, Optical studies of MOVPE-grown GaN layers, 0000 (8 April 1999); doi: 10.1117/12.344728
Proc. SPIE 3725, Peculiarities of the electron transport in ZnxCdyHg1-x-yTe, 0000 (8 April 1999); doi: 10.1117/12.344730
Proc. SPIE 3725, Spectral, kinetic, and electrical properties of electroluminescent thin-film cells based on ZnS:Mn, 0000 (8 April 1999); doi: 10.1117/12.344731
Proc. SPIE 3725, Structure of the Si-SiO2 interface, 0000 (8 April 1999); doi: 10.1117/12.344732
Proc. SPIE 3725, Simulation of the early stages of thermal SiO2 growth, 0000 (8 April 1999); doi: 10.1117/12.344733
Proc. SPIE 3725, Photoreflectance study of coupling effects in double quantum wells, 0000 (8 April 1999); doi: 10.1117/12.344734
Proc. SPIE 3725, Photoreflectance investigations of AlxGa1-xAs/GaAs bandgap dependence on Al content, 0000 (8 April 1999); doi: 10.1117/12.344735
Proc. SPIE 3725, Electronic properties of grown-in defects in semi-insulating GaAs, 0000 (8 April 1999); doi: 10.1117/12.344736
Proc. SPIE 3725, Partially strained Si1-xGex/Si structures investigated by photoreflectance spectroscopy, 0000 (8 April 1999); doi: 10.1117/12.344737
Proc. SPIE 3725, Effect of stress exerted by Si3N4 and SiO2 insulation layers on donor generation in surface layer of Czochralski-grown silicon, 0000 (8 April 1999); doi: 10.1117/12.344738
Proc. SPIE 3725, Optical properties of Zn1-xMgxSe epilayers studied by reflection spectroscopy, 0000 (8 April 1999); doi: 10.1117/12.344739
Proc. SPIE 3725, Point contact spectroscopy of ZnS:Mn,Cu-Al thin film cells, 0000 (8 April 1999); doi: 10.1117/12.344741
Proc. SPIE 3725, Electrical conductivity of the polycrystalline films of p-terphenyl, 0000 (8 April 1999); doi: 10.1117/12.344742
Proc. SPIE 3725, Erbium photoluminescence in sol-gel-derived titanium dioxide films, 0000 (8 April 1999); doi: 10.1117/12.344743
Proc. SPIE 3725, Processing parameters and transport properties of vacuum-evaporated CdSe thin films, 0000 (8 April 1999); doi: 10.1117/12.344744
Proc. SPIE 3725, In-situ STM studies of thallium underpotential deposition on Au(111) single-crystal electrode in acid solution, 0000 (8 April 1999); doi: 10.1117/12.344745
Optoelectronic Devices
Proc. SPIE 3725, Novel far-infrared detectors for space applications, 0000 (8 April 1999); doi: 10.1117/12.344746
Proc. SPIE 3725, Performance limitations of InGaAs photodiodes, 0000 (8 April 1999); doi: 10.1117/12.344747
Proc. SPIE 3725, Carrier transport mechanisms in narrow-gap photodiodes, 0000 (8 April 1999); doi: 10.1117/12.344748
Proc. SPIE 3725, Magnetron sputter epitaxy of n+-InSb on p-InSb for infrared photodiode applications, 0000 (8 April 1999); doi: 10.1117/12.344749
Proc. SPIE 3725, Carrier lifetime in Hg1-xCdxTe grown by molecular beam epitaxy, 0000 (8 April 1999); doi: 10.1117/12.344750
Proc. SPIE 3725, Temperature stability of p-n CdxHg1-xTe structures formed by ion beam milling, 0000 (8 April 1999); doi: 10.1117/12.344752
Proc. SPIE 3725, Effect of laser irradiation on (Cd,Hg)Te properties, 0000 (8 April 1999); doi: 10.1117/12.344753
Proc. SPIE 3725, Peculiarities of MCT ion etching in rf mercury glow discharge, 0000 (8 April 1999); doi: 10.1117/12.344754
Proc. SPIE 3725, Photosensitivity of graded-bandgap structures with interfacial recombination states, 0000 (8 April 1999); doi: 10.1117/12.344755
Proc. SPIE 3725, Gate-controlled narrow-bandgap photodiodes passivated with rf sputtered dielectrics, 0000 (8 April 1999); doi: 10.1117/12.344756
Proc. SPIE 3725, Surface properties of In(Sb,As), 0000 (8 April 1999); doi: 10.1117/12.344757
Proc. SPIE 3725, Spectral dependence of GaAlN bandgap-graded UV detector responsivity, 0000 (8 April 1999); doi: 10.1117/12.344758
Proc. SPIE 3725, Multilayer and multi-interface structures for very high efficiency solar cells, 0000 (8 April 1999); doi: 10.1117/12.344759
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