PROCEEDINGS VOLUME 3748
PHOTOMASK AND X-RAY MASK TECHNOLOGY VI | 13-14 APRIL 1999
Photomask and X-Ray Mask Technology VI
PHOTOMASK AND X-RAY MASK TECHNOLOGY VI
13-14 April 1999
Yokohama, Japan
Photomask Processes and Materials
Proc. SPIE 3748, Semiconductor technology trend and requirements for masks, 0000 (25 August 1999); doi: 10.1117/12.360190
Proc. SPIE 3748, Advanced high-resolution mask processes using optical proximity correction, 0000 (25 August 1999); doi: 10.1117/12.360199
Proc. SPIE 3748, Manufacturability of a 0.18-um OPC technology, 0000 (25 August 1999); doi: 10.1117/12.360209
Proc. SPIE 3748, Electron-beam lithography simulation for maskmaking: IV. Effect of resist contrast on isofocal dose, 0000 (25 August 1999); doi: 10.1117/12.360220
Proc. SPIE 3748, Properties of our developing next-generation photomask substrate, 0000 (25 August 1999); doi: 10.1117/12.360230
Proc. SPIE 3748, Implementation of chemically amplified resist on mask technology below 0.6-um feature using high-acceleration voltage e-beam system, 0000 (25 August 1999); doi: 10.1117/12.360240
Proc. SPIE 3748, Advanced Cr dry etching process, 0000 (25 August 1999); doi: 10.1117/12.360246
Proc. SPIE 3748, Evaluation of NLD mask dry etching system, 0000 (25 August 1999); doi: 10.1117/12.360255
Data Processing for Next-Generation Reticle
Proc. SPIE 3748, New Y2K problem for mask making (or, Surviving mask data problems after 2000), 0000 (25 August 1999); doi: 10.1117/12.360257
Proc. SPIE 3748, Enhancement of hierarchical mask data design system (PROPHET), 0000 (25 August 1999); doi: 10.1117/12.360191
Proc. SPIE 3748, Proposal of new layout data format for LSI patterns, 0000 (25 August 1999); doi: 10.1117/12.360192
Proc. SPIE 3748, Auxiliary pattern generation to cancel unexpected images at sidelobe overlap regions in attenuated phase-shift masks, 0000 (25 August 1999); doi: 10.1117/12.360193
Proc. SPIE 3748, Development of a total CAD system for alternate-type PSMs with optical proximity correction, 0000 (25 August 1999); doi: 10.1117/12.360194
Proc. SPIE 3748, Interactive OPC simulator for memory devices, 0000 (25 August 1999); doi: 10.1117/12.360195
Proc. SPIE 3748, Improvement of OPC data processing for photomask fabrication, 0000 (25 August 1999); doi: 10.1117/12.360196
Proc. SPIE 3748, EB_PEC by using OPC software, 0000 (25 August 1999); doi: 10.1117/12.360197
Proc. SPIE 3748, New data processing of dummy pattern generation adaptive for CMP process, 0000 (25 August 1999); doi: 10.1117/12.360198
Photomask Processes and Materials
Proc. SPIE 3748, Improvement of post-exposure delay stability of chemically amplified positive resist, 0000 (25 August 1999); doi: 10.1117/12.360200
Proc. SPIE 3748, Comparative evaluation results of CMS replacement resist for e-beam reticle fabrication, 0000 (25 August 1999); doi: 10.1117/12.360201
Proc. SPIE 3748, Fine pattern process with negative tone resist: II, 0000 (25 August 1999); doi: 10.1117/12.360202
Proc. SPIE 3748, Plasma etching of Cr: a multiparameter uniformity study utilizing patterns of various Cr loads, 0000 (25 August 1999); doi: 10.1117/12.360203
Proc. SPIE 3748, ICP (inductively coupled plasma) dry etch of DUV MoSi HTPSM, 0000 (25 August 1999); doi: 10.1117/12.360204
Proc. SPIE 3748, Comparison of mulitpass gray strategy and conventional writing method, 0000 (25 August 1999); doi: 10.1117/12.360205
Proc. SPIE 3748, Advantage in using the combination of HL-800M and CAR process, 0000 (25 August 1999); doi: 10.1117/12.360206
Proc. SPIE 3748, Enhanced pattern fidelity experiment for subquarter-micron design rule mask making, 0000 (25 August 1999); doi: 10.1117/12.360207
Proc. SPIE 3748, Primary evaluation of proximity and resist heating effects observed in high-acceleration voltage e-beam writing for 180-nm-and-beyond rule reticle fabrication, 0000 (25 August 1999); doi: 10.1117/12.360208
Proc. SPIE 3748, Resist heating effect on 50-KeV EB mask writing, 0000 (25 August 1999); doi: 10.1117/12.360210
Proc. SPIE 3748, Development of pellicle for ArF excimer laser, 0000 (25 August 1999); doi: 10.1117/12.360211
Proc. SPIE 3748, Pellicle for ArF excimer laser photolithography, 0000 (25 August 1999); doi: 10.1117/12.360212
Phase-Shift and OPC Masks
Proc. SPIE 3748, Attenuated phase-shifting mask in ArF lithography, 0000 (25 August 1999); doi: 10.1117/12.360213
Proc. SPIE 3748, Evaluation of the attenuated PSM performance as the shifter transmittance and illumination systems, 0000 (25 August 1999); doi: 10.1117/12.360214
Proc. SPIE 3748, Development of Cr-based attenuated phase-shift mask process for 0.18-um device generation, 0000 (25 August 1999); doi: 10.1117/12.360215
Proc. SPIE 3748, Fabrication of MoSiON halftone masks using ZEP7000 for MEBES 4500, 0000 (25 August 1999); doi: 10.1117/12.360216
Proc. SPIE 3748, Cost-effective DUV PSM process, 0000 (25 August 1999); doi: 10.1117/12.360217
Proc. SPIE 3748, Pattern dependence of mask topography effect in alternating phase-shifting masks, 0000 (25 August 1999); doi: 10.1117/12.360218
Equipment
Proc. SPIE 3748, Evaluation of an advanced mask-writing system, 0000 (25 August 1999); doi: 10.1117/12.360221
Proc. SPIE 3748, New mask blank handling system for the advanced electron-beam writer EX-11, 0000 (25 August 1999); doi: 10.1117/12.360222
Proc. SPIE 3748, Shipping, handling, and storage of reticles, 0000 (25 August 1999); doi: 10.1117/12.360223
Masks for X-Ray and E-Beam
Proc. SPIE 3748, X-ray phase-shift mask for proximity x-ray lithography with synchrotron radiation, 0000 (25 August 1999); doi: 10.1117/12.360224
Proc. SPIE 3748, Properties of sputtered TaGe as an x-ray absorber material, 0000 (25 August 1999); doi: 10.1117/12.360225
Proc. SPIE 3748, Printability of programmed x-ray mask defects, 0000 (25 August 1999); doi: 10.1117/12.360226
Proc. SPIE 3748, Three x-ray mask-making methods applied for LIGA process, 0000 (25 August 1999); doi: 10.1117/12.360227
Inspection, Repair, and Metrology
Proc. SPIE 3748, Novel inspection system with design rule check for high-accuracy reticles, 0000 (25 August 1999); doi: 10.1117/12.360228
Proc. SPIE 3748, Inspection and printability of programmed defects on reticles for 0.200- and 0.175-um rule devices, 0000 (25 August 1999); doi: 10.1117/12.360229
Proc. SPIE 3748, Evaluation method of 0.15- to 0.25-um advanced reticle inspection system, 0000 (25 August 1999); doi: 10.1117/12.360231
Proc. SPIE 3748, Advancements in focused ion beam repair of MoSiON phase-shifting masks, 0000 (25 August 1999); doi: 10.1117/12.360232
Proc. SPIE 3748, Line-width verification for 0.18- and 0.25-um design rule wafers and reticles, 0000 (25 August 1999); doi: 10.1117/12.360233
Proc. SPIE 3748, New UV-capable photomask CD metrology tool, 0000 (25 August 1999); doi: 10.1117/12.360234
Phase-Shift and OPC Masks
Proc. SPIE 3748, New approach for realizing k1=0.3 optical lithography, 0000 (25 August 1999); doi: 10.1117/12.360235
Proc. SPIE 3748, Resolution enhancement with high-transmission attenuating phase-shift masks, 0000 (25 August 1999); doi: 10.1117/12.360236
Proc. SPIE 3748, Halftone biasing OPC technology: an approach for achieving fine bias control on raster-scan systems, 0000 (25 August 1999); doi: 10.1117/12.360237
Equipment
Proc. SPIE 3748, Electron-beam lithography simulation for mask making: III. Effect of spot size, address grid, and raster writing strategies on lithography performance with PBS and ZEP-7000, 0000 (25 August 1999); doi: 10.1117/12.360238
Proc. SPIE 3748, Design considerations for an electron-beam pattern generator for the 130-nm generation of masks, 0000 (25 August 1999); doi: 10.1117/12.360239
Proc. SPIE 3748, Mask-writing system architecture and toolkit approach for 1G DRAM and beyond, 0000 (25 August 1999); doi: 10.1117/12.360241
Proc. SPIE 3748, Reduction of fogging effect caused by scattered electrons in an electron beam system, 0000 (25 August 1999); doi: 10.1117/12.360242
Masks for X-Ray and E-Beam
Proc. SPIE 3748, Progress in SiC membrane for x-ray mask, 0000 (25 August 1999); doi: 10.1117/12.360243