PROCEEDINGS VOLUME 3819
INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES | 28-30 OCTOBER 1998
International Conference on Photoelectronics and Night Vision Devices
INTERNATIONAL CONFERENCE ON PHOTOELECTRONICS AND NIGHT VISION DEVICES
28-30 October 1998
Moscow, Russian Federation
Mercury Cadmium-Telluride Focal Plane Arrays
Proc. SPIE 3819, Linear HgCdTe scanning focal plane arrays with time delay and integration, 0000 (10 June 1999); doi: 10.1117/12.350881
Proc. SPIE 3819, 128x128 and 384x288 HgCdTe staring focal plane arrays, 0000 (10 June 1999); doi: 10.1117/12.350892
Proc. SPIE 3819, Ultimate performance of new infrared HgCdTe focal plane arrays, 0000 (10 June 1999); doi: 10.1117/12.350903
Proc. SPIE 3819, Crosstalk investigations in HgCdTe staring focal plane arrays, 0000 (10 June 1999); doi: 10.1117/12.350911
Proc. SPIE 3819, Mercury cadmium-telluride photodiodes and focal plane arrays, 0000 (10 June 1999); doi: 10.1117/12.350912
Proc. SPIE 3819, Sensitive element dimension measurements in focal plane arrays, 0000 (10 June 1999); doi: 10.1117/12.350913
Photodetectors and Photodetective Assemblies
Proc. SPIE 3819, Negative conductance in HgCdTe photodiodes, 0000 (10 June 1999); doi: 10.1117/12.350914
Proc. SPIE 3819, Noncooled detectors of radiation for the middle range of the IR spectrum based on CdxHg1-xTe, 0000 (10 June 1999); doi: 10.1117/12.350915
Proc. SPIE 3819, Photosensitive PbSe layers with shifted long-wave photosensitivity boundary, 0000 (10 June 1999); doi: 10.1117/12.350916
Proc. SPIE 3819, Ultraviolet small-sized multichannel photodetecting assembly based on a GaP photodiode, 0000 (10 June 1999); doi: 10.1117/12.350882
Proc. SPIE 3819, Ultraviolet photodetectors based on wide-bandgap A3B5 compounds, 0000 (10 June 1999); doi: 10.1117/12.350883
Proc. SPIE 3819, Near-surface variband layers with small composition gradient as factors for the effective increase in photoresponsivity of an infrared HgCdTe photoconductive device (photoresistor), 0000 (10 June 1999); doi: 10.1117/12.350884
Proc. SPIE 3819, HgCdTe photodiode performance degradation, 0000 (10 June 1999); doi: 10.1117/12.350885
Proc. SPIE 3819, Influence of ionizing radiation based on basic parameters of photodiodes based on indium selenide, 0000 (10 June 1999); doi: 10.1117/12.350886
Night Vision Devices
Proc. SPIE 3819, Present status and perspectives of the development of night vision devices, 0000 (10 June 1999); doi: 10.1117/12.350887
Proc. SPIE 3819, Characteristics of the experimental IR SB CCD camera during outdoor scene transfer, 0000 (10 June 1999); doi: 10.1117/12.350888
Proc. SPIE 3819, IR imager based on a 128x128 HgCdTe staring focal plane array, 0000 (10 June 1999); doi: 10.1117/12.350889
Photoelectric Processes in Photodetectors
Proc. SPIE 3819, Gigantic splash of the weak optical radiation gain in intrinsic threshold photoconductive devices (photoresistors) on an increase in the concentration of recombination centers, 0000 (10 June 1999); doi: 10.1117/12.350890
Proc. SPIE 3819, Possibility of explanation of the noise-factor anomal dependence on carriers multiplication factor (photogain) in threshold avalanche photodetectors based on MIS-type heterostructures at the expense, 0000 (10 June 1999); doi: 10.1117/12.350891
Proc. SPIE 3819, Character of photocurrent dependence on two-level recombination impurity concentration in an intrinsic photoconductive detector, 0000 (10 June 1999); doi: 10.1117/12.350893
Proc. SPIE 3819, Sensitivity of an IR photodiode array with signal integration by thermoresistors, 0000 (10 June 1999); doi: 10.1117/12.350894
Proc. SPIE 3819, Photoelectron statistics, 0000 (10 June 1999); doi: 10.1117/12.350895
Proc. SPIE 3819, Comparative investigations of the bolometric properties of thin film structures based on vanadium dioxide and amorphous hydrated silicon, 0000 (10 June 1999); doi: 10.1117/12.350896
Proc. SPIE 3819, Photocarrier generation processes in Schottky barriers and possibilities to control the value and spectral dependence of quantum efficiency in an IR SB CCD, 0000 (10 June 1999); doi: 10.1117/12.350897
Problems of Technology of a Photoelectronic Materials and Devices
Proc. SPIE 3819, Recent achievements in the growth of large-size Hg1-xCdxTe single crystals with homogeneous properties, 0000 (10 June 1999); doi: 10.1117/12.350898
Proc. SPIE 3819, Perspective method of receiving the epitaxial layers and p-n structures at superhigh vacuum, 0000 (10 June 1999); doi: 10.1117/12.350899
Proc. SPIE 3819, Peculiarities of growth and electrophysical properties of epitaxial films of Pb1-xSnxSe:In, 0000 (10 June 1999); doi: 10.1117/12.350900
Proc. SPIE 3819, New polymeric materials for designing photoresistors and photodetective assemblies based on CdHgTe, 0000 (10 June 1999); doi: 10.1117/12.350901
Proc. SPIE 3819, Electrohydrodynamic source of ions and microdroplets, 0000 (10 June 1999); doi: 10.1117/12.350902
Proc. SPIE 3819, Computer modeling of emission electron beam devices with the applied program package CHARGE, 0000 (10 June 1999); doi: 10.1117/12.350904
Proc. SPIE 3819, Electron emission from a glass surface subjected to an intensive electron beam, 0000 (10 June 1999); doi: 10.1117/12.350905
Physical Properties of Materials for Thermoelectric Coolers
Proc. SPIE 3819, Highly efficient extruded material for low-temperature electronic coolers based on Bi0.85Sb0.15, 0000 (10 June 1999); doi: 10.1117/12.350906
Proc. SPIE 3819, Electronic and physical-chemical phenomena in commutational contact thermoelements of thermoelectrical coolers, 0000 (10 June 1999); doi: 10.1117/12.350907
Proc. SPIE 3819, Influence of branch resistivity and transitional contact resistance on the thermoelectrical properties of thermoelements, 0000 (10 June 1999); doi: 10.1117/12.350908
Proc. SPIE 3819, Influence of ionizing irradiation on the properties of thermoelectric coolers, 0000 (10 June 1999); doi: 10.1117/12.350909
Proc. SPIE 3819, Magnetothermoelectrical properties of characteristic commutational contacts of thermoelements based on Bi85Sb15, 0000 (10 June 1999); doi: 10.1117/12.350910
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