PHOTOMASK TECHNOLOGY AND MANAGEMENT
15-17 September 1999
Monterey, CA, United States
Photomask Patterning and Data Preparation
Proc. SPIE 3873, Electron-beam lithography simulation for mask making: V. Impact of GHOST proximity effect correction on process window, 0000 (30 December 1999); doi: 10.1117/12.373314
Proc. SPIE 3873, Advanced e-beam lithography system JBX-9000MV for 180-nm masks, 0000 (30 December 1999); doi: 10.1117/12.373325
Proc. SPIE 3873, CD performance of a new high-resolution laser pattern generator, 0000 (30 December 1999); doi: 10.1117/12.373335
Proc. SPIE 3873, Extension of graybeam writing for the 130-nm technology node, 0000 (30 December 1999); doi: 10.1117/12.373345
Proc. SPIE 3873, Improved critical dimension control in 0.8-NA laser reticle writers, 0000 (30 December 1999); doi: 10.1117/12.373353
Materials, Processes, and Process Integration
Proc. SPIE 3873, Characterization of a non-chemically amplified resist for photomask fabrication using a 257-nm optical pattern generator, 0000 (30 December 1999); doi: 10.1117/12.373362
Proc. SPIE 3873, Plasma etch of binary Cr masks: CD uniformity study of photomasks utilizing varying Cr loads, 0000 (30 December 1999); doi: 10.1117/12.373288
Proc. SPIE 3873, Dry etching technology of Cr films to produce fine-pattern reticles under 720 nm with ZEP-7000, 0000 (30 December 1999); doi: 10.1117/12.373299
Defects, Inspection, and Repair I
Proc. SPIE 3873, Dry etch yield enhancement by use of after-develop inspection, 0000 (30 December 1999); doi: 10.1117/12.373306
Proc. SPIE 3873, High-transmission PSM inspection sensitivity, 0000 (30 December 1999); doi: 10.1117/12.373307
Proc. SPIE 3873, Detection and repair of multiphase defects on alternating phase-shift masks for DUV lithography, 0000 (30 December 1999); doi: 10.1117/12.373308
Proc. SPIE 3873, High-resolution DUV inspection system for 150-nm generation masks, 0000 (30 December 1999); doi: 10.1117/12.373309
Defects, Inspection, and Repair II
Proc. SPIE 3873, High-resolution ultraviolet defect inspection of DAP (darkfield alternate phase) reticles, 0000 (30 December 1999); doi: 10.1117/12.373310
Proc. SPIE 3873, Formation and detection of subpellicle defects by exposure to DUV system illumination, 0000 (30 December 1999); doi: 10.1117/12.373311
Mask Metrology, Mask Error Factor and Specifications
Proc. SPIE 3873, Definition of new quality criteria and assessment means for masks at 150-nm design rules and beyond, 0000 (30 December 1999); doi: 10.1117/12.373312
Proc. SPIE 3873, MEEF in theory and practice, 0000 (30 December 1999); doi: 10.1117/12.373313
Proc. SPIE 3873, Novel high-speed approach for CD uniformity mapping and monitoring, 0000 (30 December 1999); doi: 10.1117/12.373315
Proc. SPIE 3873, Techniques to detect and analyze photomask CD uniformity errors, 0000 (30 December 1999); doi: 10.1117/12.373316
Proc. SPIE 3873, Effects of mask error factor on process window capability, 0000 (30 December 1999); doi: 10.1117/12.373317
Advanced Mask Technology
Proc. SPIE 3873, System architecture choices for an advanced mask writer (100 to 130 nm), 0000 (30 December 1999); doi: 10.1117/12.373318
Proc. SPIE 3873, Cost analysis of 4x and 6x 9-in. reticles for future lithography, 0000 (30 December 1999); doi: 10.1117/12.373319
Proc. SPIE 3873, Fabrication of membrane mask for next-generation lithography, 0000 (30 December 1999); doi: 10.1117/12.373320
Wafer, PSM, and Mask Process Integration
Proc. SPIE 3873, CD-SEM characterization of reticle-level pattern density effects, 0000 (30 December 1999); doi: 10.1117/12.373321
Proc. SPIE 3873, Integration of optical proximity correction strategies in strong phase shifters design for poly-gate layers, 0000 (30 December 1999); doi: 10.1117/12.373322
Proc. SPIE 3873, Development of simplified process for KrF excimer halftone mask with chrome-shielding method, 0000 (30 December 1999); doi: 10.1117/12.373323
Proc. SPIE 3873, Control methodology of off-target for varying pattern densities with chrome dry etch, 0000 (30 December 1999); doi: 10.1117/12.373324
Proc. SPIE 3873, Sub-0.18-um line/space lithography using 248-nm scanners and assisting feature OPC masks, 0000 (30 December 1999); doi: 10.1117/12.373326
Resolution Enhancement Techniques
Proc. SPIE 3873, PMJ' 99 panel discussion review: OPC mask technology for KrF lithography, 0000 (30 December 1999); doi: 10.1117/12.373327
Proc. SPIE 3873, Through-focus image balancing of alternating phase-shifting masks, 0000 (30 December 1999); doi: 10.1117/12.373328
Proc. SPIE 3873, ZrSiO: a new and robust material for attenuated phase-shift mask in ArF lithography, 0000 (30 December 1999); doi: 10.1117/12.373329
Proc. SPIE 3873, Proximity effects of alternating phase-shift masks, 0000 (30 December 1999); doi: 10.1117/12.373330
Proc. SPIE 3873, Realization of practical attenuated phase-shift mask with high-transmission KrF excimer laser exposure, 0000 (30 December 1999); doi: 10.1117/12.373331
Proc. SPIE 3873, Transmission and phase balancing of alternating phase-shifting masks (5x): theoretical and experimental results, 0000 (30 December 1999); doi: 10.1117/12.373332
BACUS '99 Special Focus Program: "Optics Forever!?"
Proc. SPIE 3873, Challenges and opportunities for 157-nm mask technology, 0000 (30 December 1999); doi: 10.1117/12.373333
Proc. SPIE 3873, Properties of fused silica for 157-nm photomasks, 0000 (30 December 1999); doi: 10.1117/12.373334
Proc. SPIE 3873, Dry and F-doped fused silica for photomask substrate in 157-nm lithography, 0000 (30 December 1999); doi: 10.1117/12.373336
Proc. SPIE 3873, Masking materials for 157-nm lithography, 0000 (30 December 1999); doi: 10.1117/12.373337
Proc. SPIE 3873, Mask substrate requirements and development for extreme ultraviolet lithography (EUVL), 0000 (30 December 1999); doi: 10.1117/12.373338
Proc. SPIE 3873, Comparison of at-wavelenth inspection, printability, and simulation of nanometer-scale substrate defects in extreme ultraviolet lithography (EUVL), 0000 (30 December 1999); doi: 10.1117/12.373339
Poster Session
Proc. SPIE 3873, Process optimization of e-beam lithography with high-accelerated voltage, 0000 (30 December 1999); doi: 10.1117/12.373340
Proc. SPIE 3873, Improvement of CD accuracy for next-generation reticles using HL-800M and CA resists, 0000 (30 December 1999); doi: 10.1117/12.373341
Proc. SPIE 3873, Traceability, reproducibility, and comparability of grid calibrations, 0000 (30 December 1999); doi: 10.1117/12.373342
Proc. SPIE 3873, Lithography simulation of sub-0.30-um resist features for photomask fabrication using i-line optical pattern generators, 0000 (30 December 1999); doi: 10.1117/12.373343
Proc. SPIE 3873, Performance of the EL-4+ maskwriter for advanced chrome on glass reticles, 0000 (30 December 1999); doi: 10.1117/12.373344
Proc. SPIE 3873, Practical gold thin-film photocathodes for advanced electron-beam lithography, 0000 (30 December 1999); doi: 10.1117/12.373346
Proc. SPIE 3873, Incorporation of laser proximity correction into mask production, 0000 (30 December 1999); doi: 10.1117/12.373347
Proc. SPIE 3873, Reduction of beam-induced pattern placement errors in MEBES systems, 0000 (30 December 1999); doi: 10.1117/12.373348
Proc. SPIE 3873, Measurement of residual birefringence in photomask blanks, 0000 (30 December 1999); doi: 10.1117/12.373349
Proc. SPIE 3873, Puddle developers for ZEP 7000, 0000 (30 December 1999); doi: 10.1117/12.373350
Proc. SPIE 3873, High-resolution thickness measurements and evaluation of a photomask blank, 0000 (30 December 1999); doi: 10.1117/12.373351
Proc. SPIE 3873, Analysis of photomask CD errors depending on development methods, 0000 (30 December 1999); doi: 10.1117/12.373352
Proc. SPIE 3873, Chemically amplified positive resist for next-generation photomask fabrication, 0000 (30 December 1999); doi: 10.1117/12.373354
Proc. SPIE 3873, Birefringence dispersion in photomask substrates for DUV lithography, 0000 (30 December 1999); doi: 10.1117/12.373355
Proc. SPIE 3873, Improving CDs on a MEBES system by improving the ZEP 7000 development and dry etch process, 0000 (30 December 1999); doi: 10.1117/12.373356
Proc. SPIE 3873, Comparison of DNQ/novolac resists for e-beam exposure, 0000 (30 December 1999); doi: 10.1117/12.373357
Proc. SPIE 3873, Die-to-die and die-to-database capability analysis for advanced OPC inspection, 0000 (30 December 1999); doi: 10.1117/12.373358