PROCEEDINGS VOLUME 3882
MICROELECTRONIC MANUFACTURING '99 | 22-23 SEPTEMBER 1999
Process, Equipment, and Materials Control in Integrated Circuit Manufacturing V
MICROELECTRONIC MANUFACTURING '99
22-23 September 1999
Santa Clara, CA, United States
Real-time and Run-to-Run Modeling and Control in Integrated Circuit Manufacturing
Proc. SPIE 3882, Optimal control strategy using linear programming for load disturbance compensation in thermal processing systems, 0000 (3 September 1999); doi: 10.1117/12.361294
Proc. SPIE 3882, Oxide chemical mechanical polishing closed-loop time control, 0000 (3 September 1999); doi: 10.1117/12.361305
Proc. SPIE 3882, Effect of PEB temperature profile on CD for DUV resists, 0000 (3 September 1999); doi: 10.1117/12.361314
Proc. SPIE 3882, Integration of the APC framework with AMD's Fab25 factory system, 0000 (3 September 1999); doi: 10.1117/12.361323
Proc. SPIE 3882, AMD's advanced process control of poly-gate critical dimension, 0000 (3 September 1999); doi: 10.1117/12.361324
Proc. SPIE 3882, Novel method of predicting lot polish time for high-volume oxide chemical mechanical polishing, 0000 (3 September 1999); doi: 10.1117/12.361325
Proc. SPIE 3882, Spatially programmable temperature control and measurement for chemically amplified photoresist processing, 0000 (3 September 1999); doi: 10.1117/12.361326
Proc. SPIE 3882, Optimizing the target-to-wafer spacing for highly uniform PVD films, 0000 (3 September 1999); doi: 10.1117/12.361327
Sensors, Monitors, and Metrology in Integrated Circuit Manufacturing
Proc. SPIE 3882, Polysilicon planarization and plug recess etching in a decoupled plasma source chamber using two endpoint techniques, 0000 (3 September 1999); doi: 10.1117/12.361328
Proc. SPIE 3882, Asymmetric alignment mark compensation, 0000 (3 September 1999); doi: 10.1117/12.361295
Poster Session
Proc. SPIE 3882, Reduced cost of ownership process for PECVD dielectric 1 and hardmask, 0000 (3 September 1999); doi: 10.1117/12.361296
Sensors, Monitors, and Metrology in Integrated Circuit Manufacturing
Proc. SPIE 3882, Application of CD-SEM edge-width measurement to contact-hole process monitoring and development, 0000 (3 September 1999); doi: 10.1117/12.361297
Proc. SPIE 3882, Characterization of the CMP process by atomic force profilometry, 0000 (3 September 1999); doi: 10.1117/12.361298
Proc. SPIE 3882, Improved metal CMP endpoint control by monitoring carrier speed controller output or pad temperature, 0000 (3 September 1999); doi: 10.1117/12.361299
Proc. SPIE 3882, Extending ellipsometry capabilities for ultrathin gate oxide metrology using rapid optical surface treatment technology, 0000 (3 September 1999); doi: 10.1117/12.361300
Proc. SPIE 3882, Litho clusters with integrated metrology: the next step in continuous flow manufacturing, 0000 (3 September 1999); doi: 10.1117/12.361301
Process Optimization in Integrated Circuit Manufacturing
Proc. SPIE 3882, Current state of 300-mm lithography in a pilot line environment, 0000 (3 September 1999); doi: 10.1117/12.361302
Proc. SPIE 3882, Approaches to solving tool corrosion problems through process modification, 0000 (3 September 1999); doi: 10.1117/12.361303
Proc. SPIE 3882, Characterization of sub-0.18-um critical dimension pattern collapse for yield improvement, 0000 (3 September 1999); doi: 10.1117/12.361304
Proc. SPIE 3882, Pt patterning as a storage node by chemically assisted physical etching for 1-Gb DRAM and beyond, 0000 (3 September 1999); doi: 10.1117/12.361306
Proc. SPIE 3882, Characterization of PECVD Ti process and development of a plasma-less chlorine clean for process repeatability in advanced DRAM manufacturing, 0000 (3 September 1999); doi: 10.1117/12.361307
Proc. SPIE 3882, Polysilicon gate functional failure mechanism, 0000 (3 September 1999); doi: 10.1117/12.361308
Proc. SPIE 3882, Optimizing the clean effect of wafer backside in lithography developer process, 0000 (3 September 1999); doi: 10.1117/12.361309
Poster Session
Proc. SPIE 3882, Effect of SF6 and CI2 plasma on bottom rounding of silicon trench, 0000 (3 September 1999); doi: 10.1117/12.361310
Proc. SPIE 3882, Focused ion beam in-situ cross sectioning and metrology in lithography, 0000 (3 September 1999); doi: 10.1117/12.361311
Proc. SPIE 3882, High-density plasma deposition manufacturing productivity improvement, 0000 (3 September 1999); doi: 10.1117/12.361312
Proc. SPIE 3882, Low open area multilayered dielectic film etch endpoint detection using EndPoint Plus, 0000 (3 September 1999); doi: 10.1117/12.361313
Proc. SPIE 3882, Plasma ashing using microwaves via slot antenna for 300-mm wafers, 0000 (3 September 1999); doi: 10.1117/12.361315
Proc. SPIE 3882, Combine technique of conducting materials testing at high pressures, 0000 (3 September 1999); doi: 10.1117/12.361316
Proc. SPIE 3882, Characterization of various Ti-Al film alloys as wafer temperature metrology systems, 0000 (3 September 1999); doi: 10.1117/12.361317
Proc. SPIE 3882, High-density plasma etching of aluminum copper on titanium tungsten, 0000 (3 September 1999); doi: 10.1117/12.361318
Proc. SPIE 3882, Critical structure characterization in 0.25-um metal masking, 0000 (3 September 1999); doi: 10.1117/12.361319
Proc. SPIE 3882, New methodology to baseline and match AME polysilicon etcher using advanced diagnostic tools, 0000 (3 September 1999); doi: 10.1117/12.361320
Sensors, Monitors, and Metrology in Integrated Circuit Manufacturing
Proc. SPIE 3882, New optical sensor for real-time in-situ end point monitoring during dry etching of III-V ternary multistack layers, 0000 (3 September 1999); doi: 10.1117/12.361321
Poster Session
Proc. SPIE 3882, IC yield enhancement through optimization of photolithography pattern at the isolation step, 0000 (3 September 1999); doi: 10.1117/12.361322
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