MICROELECTRONIC MANUFACTURING '99
22-23 September 1999
Santa Clara, CA, United States
Process Equipment Monitoring I: CMP
Proc. SPIE 3884, In-line monitoring of chemical-mechanical polishing processes, 0000 (27 August 1999); doi: 10.1117/12.361329
Proc. SPIE 3884, Defect detection strategies for chemical-mechanical polishing process in shallow-trench isolation applications, 0000 (27 August 1999); doi: 10.1117/12.361347
Proc. SPIE 3884, Metal-fill optical test structures for improved chemical mechanical polishing, 0000 (27 August 1999); doi: 10.1117/12.361356
Process Equipment Monitoring II: Lithography, Implant, Plasma Processing
Proc. SPIE 3884, Integrated yield and CD enhancement for advanced DUV lithography, 0000 (27 August 1999); doi: 10.1117/12.361360
Proc. SPIE 3884, Pioneering breakthroughs in implant monitor wafer cost reduction at 300 mm, 0000 (27 August 1999); doi: 10.1117/12.361361
Proc. SPIE 3884, Innovative integrated plasma tool for process and exhaust monitoring, 0000 (27 August 1999); doi: 10.1117/12.361362
Proc. SPIE 3884, Defect reduction strategy for plasma etch, 0000 (27 August 1999); doi: 10.1117/12.361330
Wafer Characterization and Monitoring
Proc. SPIE 3884, New sample preparation method for improved defect characterization yield on bare wafers, 0000 (27 August 1999); doi: 10.1117/12.361331
Proc. SPIE 3884, Using the surface charge profiler for in-line monitoring of doping concentration in silicon epitaxial wafer manufacturing, 0000 (27 August 1999); doi: 10.1117/12.361332
Proc. SPIE 3884, Analysis of phosphorous autodoping in P-type silicon measured using corona oxide silicon (COS) techniques, 0000 (27 August 1999); doi: 10.1117/12.361333
Proc. SPIE 3884, High-resolution tracing method for monitoring metal contaminants in silicon device manufacturing processes, 0000 (27 August 1999); doi: 10.1117/12.361334
Dielectric Characterization and Monitoring II
Proc. SPIE 3884, Gate dielectric monitoring using noncontact electrical characterization, 0000 (27 August 1999); doi: 10.1117/12.361335
Proc. SPIE 3884, COCOS oxide film characterization and monitoring, 0000 (27 August 1999); doi: 10.1117/12.361336
Proc. SPIE 3884, Particle issues in spin-on dielectric materials, 0000 (27 August 1999); doi: 10.1117/12.361337
Poster Session
Proc. SPIE 3884, Silicide sheet resistivity and metal film stress measurements as emissivity-independent techniques for RTP temperature monitoring, 0000 (27 August 1999); doi: 10.1117/12.361338
Process Monitoring and Characterization
Proc. SPIE 3884, Identification of amorphous silicon residues in a low-power CMOS technology, 0000 (27 August 1999); doi: 10.1117/12.361339
Proc. SPIE 3884, Online characterization of HSG polysilicon by AFM, 0000 (27 August 1999); doi: 10.1117/12.361340
Modeling and Simulation
Proc. SPIE 3884, Frequency distribution modeling for high-speed microprocessors using on-chip ring oscillators, 0000 (27 August 1999); doi: 10.1117/12.361341
Defect Detection and Failure Analysis II
Proc. SPIE 3884, Process and yield improvement based on fast in-line automatic defect classification, 0000 (27 August 1999); doi: 10.1117/12.361342
Proc. SPIE 3884, Innovating SRAM design and test program for fast process-related defect recognition and failure analysis, 0000 (27 August 1999); doi: 10.1117/12.361343
Proc. SPIE 3884, Influence of metal deposition temperature on deep-submicrometer metal lithography, 0000 (27 August 1999); doi: 10.1117/12.361344
Proc. SPIE 3884, SEM-based automatic defect classification (ADC), 0000 (27 August 1999); doi: 10.1117/12.361345
Poster Session
Proc. SPIE 3884, Responsivity of GaN and (Ga,Al)N band-gap-graded ultraviolet p-n detectors, 0000 (27 August 1999); doi: 10.1117/12.361346
Dielectric Characterization and Monitoring I
Proc. SPIE 3884, Ultrathin gate oxide degradation under different rates of charge injection, 0000 (27 August 1999); doi: 10.1117/12.361348
Proc. SPIE 3884, Properties of ultrathin gate oxides grown in N2O-based oxidation ambients by rapid thermal processing, 0000 (27 August 1999); doi: 10.1117/12.361349
Process Equipment Monitoring II: Lithography, Implant, Plasma Processing
Proc. SPIE 3884, Practical manufacturing technique for reducing charge-induced gate oxide degradation during ion implantation, 0000 (27 August 1999); doi: 10.1117/12.361350
Dielectric Characterization and Monitoring I
Proc. SPIE 3884, Hot-carrier degradation study of high-density plasma (HDP) oxide deposition process in deep-submicron NMOSFETs, 0000 (27 August 1999); doi: 10.1117/12.361351
Proc. SPIE 3884, Effect of Fe and Cu contamination on the reliability of ultrathin gate oxides, 0000 (27 August 1999); doi: 10.1117/12.361352
Modeling and Simulation
Proc. SPIE 3884, Influence of different materials on the thermal behavior of a CDIP-8 ceramic package, 0000 (27 August 1999); doi: 10.1117/12.361353
Defect Detection and Failure Analysis I
Proc. SPIE 3884, Failure analysis of wafer-level reliability testing failure, 0000 (27 August 1999); doi: 10.1117/12.361354
Proc. SPIE 3884, Fatal defect detection from visual abnormalities of logic LSI using IDDQ, 0000 (27 August 1999); doi: 10.1117/12.361355
Modeling and Simulation
Proc. SPIE 3884, Defect-free IDDQ with reverse body bias, 0000 (27 August 1999); doi: 10.1117/12.361357
Defect Detection and Failure Analysis I
Proc. SPIE 3884, Application of liquid crystal techniques with image processing, 0000 (27 August 1999); doi: 10.1117/12.361358
Process Monitoring and Characterization
Proc. SPIE 3884, Degradation zones of semiconductor target (Si) formed as a result of nanosecond UV laser material processing, 0000 (27 August 1999); doi: 10.1117/12.361359
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