PROCEEDINGS VOLUME 3890
MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS | 28 SEPTEMBER - 2 OCTOBER 1998
Fourth International Conference on Material Science and Material Properties for Infrared Optoelectronics
IN THIS VOLUME

0 Sessions, 90 Papers, 0 Presentations
MATERIAL SCIENCE AND MATERIAL PROPERTIES FOR INFRARED OPTOELECTRONICS
28 September - 2 October 1998
Kiev, Ukraine
Device Applications
Proc. SPIE 3890, Vertical transport in GaAs/GaAlAs QW-GRIN structures studied by photocurrent spectroscopy, 0000 (4 November 1999); doi: 10.1117/12.368330
Proc. SPIE 3890, Assessment of HgCdTe photodiodes and quantum well infrared photoconductors for long-wavelength focal plane arrays, 0000 (4 November 1999); doi: 10.1117/12.368341
Proc. SPIE 3890, Epitaxial lead-chalcogenide on silicon layers for thermal imaging applications, 0000 (4 November 1999); doi: 10.1117/12.368352
Proc. SPIE 3890, Spontaneous IR intersublevel emission from quantum dots conditioned by main interband lasing, 0000 (4 November 1999); doi: 10.1117/12.368363
Proc. SPIE 3890, Stimulated emission of far-infrared radiation from uniaxially strained gapless Hg1-xCdxTe, 0000 (4 November 1999); doi: 10.1117/12.368374
Proc. SPIE 3890, Peculiarities of dynamic pyroelectric response of spin-coated corona-charged P(VDF/TrFE) polymer films, 0000 (4 November 1999); doi: 10.1117/12.368385
Proc. SPIE 3890, Planar waveguide phase matching for backward parametric oscillation, 0000 (4 November 1999); doi: 10.1117/12.368396
Proc. SPIE 3890, Epitaxial layer CdHgTe stress influence on diffusion impurities during creation of photodetectors, 0000 (4 November 1999); doi: 10.1117/12.368407
Proc. SPIE 3890, New pyroactive structures for infrared optoelectronics, 0000 (4 November 1999); doi: 10.1117/12.368418
Proc. SPIE 3890, Correlation of the characteristics of MIS structures and stoichiometry disturbances of Hg1-xZnxTe, 0000 (4 November 1999); doi: 10.1117/12.368331
Proc. SPIE 3890, Modulation spectroscopic approach to the study of photocurrent spectra in GaAs/GaAlAs QW-GRIN laser structures, 0000 (4 November 1999); doi: 10.1117/12.368332
Proc. SPIE 3890, II-IV-V2 and I-III-VI2 nonlinear optical crystals for mid-IR range: Schottky defects concentration, 0000 (4 November 1999); doi: 10.1117/12.368333
Proc. SPIE 3890, Optical properties of Hg1-xCdxTe/CdTe epitaxial films with graded band gap, 0000 (4 November 1999); doi: 10.1117/12.368334
Proc. SPIE 3890, Cryogenic infrared multilayer filters: the origin of low-temperature shift of the pass-band edge, 0000 (4 November 1999); doi: 10.1117/12.368335
Proc. SPIE 3890, Properties and stability of parameters of highly compensated PbS-CdS, PbS-SnS, PbS-PbO, and PbTe-CdTe films, 0000 (4 November 1999); doi: 10.1117/12.368336
Proc. SPIE 3890, Anisotropic thermoelectric devices for the registration of IR-range intensive radiant flows, 0000 (4 November 1999); doi: 10.1117/12.368337
Proc. SPIE 3890, Interference IR filters on CdSb monocrystal substrates, 0000 (4 November 1999); doi: 10.1117/12.368338
Proc. SPIE 3890, Shottky diode based on the solid solutions CdxMnyHg1-x-yTe and CdxZnyHg1-x-yTe, 0000 (4 November 1999); doi: 10.1117/12.368339
Proc. SPIE 3890, Silicon p-i-n photodiode with low values of dark current, 0000 (4 November 1999); doi: 10.1117/12.368340
Proc. SPIE 3890, New film materials for optoelectronics based on CdAl(Ga)2S(Se)4 compounds, 0000 (4 November 1999); doi: 10.1117/12.368342
Proc. SPIE 3890, Photoresponse in nonuniform semiconductor junctions under infrared laser excitation, 0000 (4 November 1999); doi: 10.1117/12.368343
Proc. SPIE 3890, Currents in Hg1-xCdxTe photodiodes, 0000 (4 November 1999); doi: 10.1117/12.368344
Proc. SPIE 3890, Recombination current for p-i-n junctions based on compensated semiconductor materials, 0000 (4 November 1999); doi: 10.1117/12.368345
Proc. SPIE 3890, Phase states and magnetic structure of superconducting inclusions in narrow-gap semiconductor matrices, 0000 (4 November 1999); doi: 10.1117/12.368346
Proc. SPIE 3890, Absorption of far-infrared radiation by metal-dielectric composites, 0000 (4 November 1999); doi: 10.1117/12.368347
Characterization and Properties
Proc. SPIE 3890, Charge impurity states of In, Ga, Ge in narrow-gap PbTe, 0000 (4 November 1999); doi: 10.1117/12.368348
Proc. SPIE 3890, Characterization of diffusion length of minority carriers in (CdZn)Te at temperatures of 80 to 300 K, 0000 (4 November 1999); doi: 10.1117/12.368349
Proc. SPIE 3890, Depth inhomogeneity of ZnTe, CdZnTe, ZnSe epilayers grown on (001)GaAs of MBE, 0000 (4 November 1999); doi: 10.1117/12.368350
Proc. SPIE 3890, Optical properties of semiconducting iron disilicide thin films, 0000 (4 November 1999); doi: 10.1117/12.368351
Proc. SPIE 3890, Effect of gamma ray and high-energy oxygen ion radiation on electrical and optical properties of MCT epitaxial layers, 0000 (4 November 1999); doi: 10.1117/12.368353
Proc. SPIE 3890, Photoelectric characteristics of the epitaxial film CdxHg1-xTe grown by molecular beam epitaxy, 0000 (4 November 1999); doi: 10.1117/12.368354
Proc. SPIE 3890, Experimental investigations of electric current under transverse and longitudinal electric field in uniaxially deformed p-Ge, 0000 (4 November 1999); doi: 10.1117/12.368355
Proc. SPIE 3890, Influence of uniaxial pressure on the photoionization of h-centers in semiconductors, 0000 (4 November 1999); doi: 10.1117/12.368356
Proc. SPIE 3890, Thermally induced currents and instabilities of photoresponse in PbTe(In)-based films, 0000 (4 November 1999); doi: 10.1117/12.368357
Proc. SPIE 3890, Photoelectric and kinetic properties of PbTe(Ga) films, 0000 (4 November 1999); doi: 10.1117/12.368358
Proc. SPIE 3890, Strain analysis of epitaxial multivalley semiconductor films using galvanomagnetic-effect rotational dependence, 0000 (4 November 1999); doi: 10.1117/12.368359
Proc. SPIE 3890, Galvanomagnetic and optical properties of CdTe wafers for substrates, 0000 (4 November 1999); doi: 10.1117/12.368360
Proc. SPIE 3890, New approach to the problem of determination of optical band gap of crystals with exponential absorption edge, 0000 (4 November 1999); doi: 10.1117/12.368361
Proc. SPIE 3890, Photoelectric properties of polycrystalline layers based on halogen-doped PbTe, 0000 (4 November 1999); doi: 10.1117/12.368362
Proc. SPIE 3890, Imaging system performance analysis and optimization using objective image quality criteria, 0000 (4 November 1999); doi: 10.1117/12.368364
Proc. SPIE 3890, Conditions of arising and nature of the dislocation magnetism of deformed silicon crystals, 0000 (4 November 1999); doi: 10.1117/12.368365
Proc. SPIE 3890, Influence of processing C60 fullerite by pressing on its crystalline structure and magnetic properties, 0000 (4 November 1999); doi: 10.1117/12.368366
Proc. SPIE 3890, Low-temperature anomalies of the photomagnetic effect in p-Hg1-xCdxTe, 0000 (4 November 1999); doi: 10.1117/12.368367
Proc. SPIE 3890, Impurity profile determination by the optimal parameter choice method, 0000 (4 November 1999); doi: 10.1117/12.368368
Proc. SPIE 3890, Light scattering in a filled nematic cell, 0000 (4 November 1999); doi: 10.1117/12.368369
Proc. SPIE 3890, Group-theory approach within the framework of the tight-binding model, 0000 (4 November 1999); doi: 10.1117/12.368370
Proc. SPIE 3890, Infrared absorption and dielectric properties of Li-Cu ferrite, 0000 (4 November 1999); doi: 10.1117/12.368371
Proc. SPIE 3890, Doping effect on concentration dependence of the diffusion coefficient in semiconductors, 0000 (4 November 1999); doi: 10.1117/12.368372
Proc. SPIE 3890, Transport properties of p-Hg1-xCdxTe (x = 0.22), 0000 (4 November 1999); doi: 10.1117/12.368373
Proc. SPIE 3890, Superluminal transfer of information in electrodynamics, 0000 (4 November 1999); doi: 10.1117/12.368375
Proc. SPIE 3890, Physical effects caused by superluminal transfer of information, 0000 (4 November 1999); doi: 10.1117/12.368376
Proc. SPIE 3890, Multilayer structures based on variable-gap semiconductors: carrier redistribution phenomena during current transfer, 0000 (4 November 1999); doi: 10.1117/12.368377
Proc. SPIE 3890, Influence of semiconductor structure inhomogeneity on electrophysical measurement results, 0000 (4 November 1999); doi: 10.1117/12.368378
Proc. SPIE 3890, Radiation defect band in Pb1-xSnxSe(x<0.03) alloys irradiated with electrons, 0000 (4 November 1999); doi: 10.1117/12.368379
Proc. SPIE 3890, Photoconductivity kinetics and the nature of Yb-induced defect states in Pb1-xGexTe alloys, 0000 (4 November 1999); doi: 10.1117/12.368380
Proc. SPIE 3890, Pinning of the Fermi level in A2B6 semiconductors, 0000 (4 November 1999); doi: 10.1117/12.368381
Proc. SPIE 3890, Phase transitions and transport properties in SnTe crystals and thin films, 0000 (4 November 1999); doi: 10.1117/12.368382
Proc. SPIE 3890, Electronic properties and energy spectrum of SnTe doped with In, 0000 (4 November 1999); doi: 10.1117/12.368383
Proc. SPIE 3890, Electronic band parameters: obtaining and peculiarities of InSb1-xBix crystal structures, 0000 (4 November 1999); doi: 10.1117/12.368384