PROCEEDINGS VOLUME 3892
ASIA PACIFIC SYMPOSIUM ON MICROELECTRONICS AND MEMS | 27-29 OCTOBER 1999
Device and Process Technologies for MEMS and Microelectronics
IN THIS VOLUME

0 Sessions, 36 Papers, 0 Presentations
ASIA PACIFIC SYMPOSIUM ON MICROELECTRONICS AND MEMS
27-29 October 1999
Gold Coast, Australia
Microactuators
Proc. SPIE 3892, Multilayered piezoceramic microactuators formed by milling in the green state, 0000 (1 October 1999); doi: 10.1117/12.364476
Proc. SPIE 3892, Lithographic definition of channel and void structures in multilayer PZT microactuators, 0000 (1 October 1999); doi: 10.1117/12.364485
Proc. SPIE 3892, Fabrication of thin film metallic glass and its application to microactuators, 0000 (1 October 1999); doi: 10.1117/12.364504
Proc. SPIE 3892, Integration of a microlens on a micro XY-stage, 0000 (1 October 1999); doi: 10.1117/12.364508
Proc. SPIE 3892, 3D micromachined devices based on polyimide joint technology, 0000 (1 October 1999); doi: 10.1117/12.364509
Proc. SPIE 3892, Two-dimensional microscanner actuated by PZT thin film, 0000 (1 October 1999); doi: 10.1117/12.364510
MEMS Technologies
Proc. SPIE 3892, Transferable silicon nitride microcavities, 0000 (1 October 1999); doi: 10.1117/12.364511
Poster Session
Proc. SPIE 3892, Dry release process of anhydrous HF gas-phase etching for the fabrication of a vibrating microgyroscope, 0000 (1 October 1999); doi: 10.1117/12.364477
MEMS Technologies
Proc. SPIE 3892, Ultralow-stress silicon-rich nitride films for microstructure fabrication, 0000 (1 October 1999); doi: 10.1117/12.364478
Proc. SPIE 3892, Drop-by-drop deposition of ceramic slurry for fabrication of PZT microstructures, 0000 (1 October 1999); doi: 10.1117/12.364479
Proc. SPIE 3892, Direct writing of nickel by electrodeposition from various electrolytes, 0000 (1 October 1999); doi: 10.1117/12.364480
Proc. SPIE 3892, Constructing biomolecular motor-powered hybrid NEMS devices, 0000 (1 October 1999); doi: 10.1117/12.364481
Sensors and Photodevices
Proc. SPIE 3892, Thick porous silicon layers as sacrificial material for low-power gas sensors, 0000 (1 October 1999); doi: 10.1117/12.364482
Proc. SPIE 3892, Design and fabrication of novel photodetector arrays, 0000 (1 October 1999); doi: 10.1117/12.364483
Proc. SPIE 3892, Inertial sensing paradigm using an accelerometer array: XL-array, 0000 (1 October 1999); doi: 10.1117/12.364484
Proc. SPIE 3892, Microfabrication and reliability study of sapphire-based Ti/Pt electrodes for thin film gas sensor applications, 0000 (1 October 1999); doi: 10.1117/12.364486
Proc. SPIE 3892, Excess noise in MWIR photovoltaic detectors fabricated using a new junction formation technology, 0000 (1 October 1999); doi: 10.1117/12.364487
Proc. SPIE 3892, Thin film thermal sensor fabrication and application, 0000 (1 October 1999); doi: 10.1117/12.364488
Proc. SPIE 3892, Process technologies for high-resolution infrared detectors based on LiTaO3, 0000 (1 October 1999); doi: 10.1117/12.364489
Photolithography
Proc. SPIE 3892, Limiting factors in the production of deep microstructures, 0000 (1 October 1999); doi: 10.1117/12.364490
Proc. SPIE 3892, Diffusion mechanisms in microlithographic thin polymeric films, 0000 (1 October 1999); doi: 10.1117/12.364491
Proc. SPIE 3892, Monitoring photoresist glass transition temperature versus processing parameters via NMR broad band spectroscopy, 0000 (1 October 1999); doi: 10.1117/12.364492
Proc. SPIE 3892, Micro-optical structures for atom lithography studies, 0000 (1 October 1999); doi: 10.1117/12.364493
Proc. SPIE 3892, Nonstandard bleaching behavior in DNQ systems: modeling and lithographic consequences, 0000 (1 October 1999); doi: 10.1117/12.364494
Proc. SPIE 3892, Lens FPD and LH effect on CD control of lithography process, 0000 (1 October 1999); doi: 10.1117/12.364495
Proc. SPIE 3892, Local defect real-time monitor system in lithography, 0000 (1 October 1999); doi: 10.1117/12.364496
Other Process Issues
Proc. SPIE 3892, Physical and electrical properties of thin dielectrics prepared by photoassisted growth in an NO environment, 0000 (1 October 1999); doi: 10.1117/12.364497
Proc. SPIE 3892, Comparison of wet and dry gate oxides for SiC MOSFETs, 0000 (1 October 1999); doi: 10.1117/12.364498
Proc. SPIE 3892, Method for manufacturing high-quality gravure plates for printing fine-line electrical circuits, 0000 (1 October 1999); doi: 10.1117/12.364499
Proc. SPIE 3892, Self-alignment for microparts assembly using water surface tension, 0000 (1 October 1999); doi: 10.1117/12.364500
Poster Session
Proc. SPIE 3892, Patterning of nickel-titanium SMA films with chemical etching by a novel multicomponent etchant, 0000 (1 October 1999); doi: 10.1117/12.364501
Proc. SPIE 3892, Fabrication of high-yield Si microdiaphragms using electrochemical etch stop in TMAH/IPA/pyrazine solution, 0000 (1 October 1999); doi: 10.1117/12.364502
Proc. SPIE 3892, Fabrication of an uncooled infrared sensor using pyroelectric thin film, 0000 (1 October 1999); doi: 10.1117/12.364503
Proc. SPIE 3892, Oxygen gas sensing and microstructure characterization of sol-gel-prepared MoO3-TiO2 thin films, 0000 (1 October 1999); doi: 10.1117/12.364505
Proc. SPIE 3892, Lens temperature and performance correlation analysis, 0000 (1 October 1999); doi: 10.1117/12.364506
Proc. SPIE 3892, Stress effect on the via crack of IMD structure in scrubber processing, 0000 (1 October 1999); doi: 10.1117/12.364507
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