PROCEEDINGS VOLUME 3896
INTERNATIONAL SYMPOSIUM ON PHOTONICS AND APPLICATIONS | 29 NOVEMBER - 3 DECEMBER 1999
Design, Fabrication, and Characterization of Photonic Devices
INTERNATIONAL SYMPOSIUM ON PHOTONICS AND APPLICATIONS
29 November - 3 December 1999
Singapore, Singapore
Keynote Paper
Proc. SPIE 3896, Recent progress of photonic device research, 0000 (12 November 1999); doi: 10.1117/12.370296
High-Power Semiconductor Lasers
Proc. SPIE 3896, Measurement of mounting-induced strain in high-power laser diode arrays, 0000 (12 November 1999); doi: 10.1117/12.370311
Proc. SPIE 3896, Fabrication and characterization of high-power diode lasers, 0000 (12 November 1999); doi: 10.1117/12.370324
Wide-Bandgap Materials
Proc. SPIE 3896, Stimulated emission and pump-probe studies of wide-gap nitrides for UV-blue photonic applications, 0000 (12 November 1999); doi: 10.1117/12.370335
Proc. SPIE 3896, Optical properties of InGaN grown by MOCVD on sapphire and on bulk GaN, 0000 (12 November 1999); doi: 10.1117/12.370346
Proc. SPIE 3896, Comparison of optical properties in GaN and InGaN quantum well structures, 0000 (12 November 1999); doi: 10.1117/12.370352
Proc. SPIE 3896, Low-cost synthesis of ZnCdSe semiconducting thin films for optoelectronic applications, 0000 (12 November 1999); doi: 10.1117/12.370361
Semiconductor Light Emitters
Proc. SPIE 3896, Shot-noise-limited VCSELs for high-speed fiber optic data transmission, 0000 (12 November 1999); doi: 10.1117/12.370371
Proc. SPIE 3896, Manufacturing of lasers for DWDM systems, 0000 (12 November 1999); doi: 10.1117/12.370381
Proc. SPIE 3896, Integrated thermal-electrical-optical simulator of vertical-cavity surface-emitting lasers, 0000 (12 November 1999); doi: 10.1117/12.370297
Proc. SPIE 3896, Analysis and design of AlGaInP single-quantum-well LED, 0000 (12 November 1999); doi: 10.1117/12.370302
Proc. SPIE 3896, Intracavity piezoelectric InGaAs/GaAs laser modulator, 0000 (12 November 1999); doi: 10.1117/12.370303
Semiconductor Device Processing
Proc. SPIE 3896, Quantum well intermixing: from visible to far-IR wavelength applications, 0000 (12 November 1999); doi: 10.1117/12.370304
Proc. SPIE 3896, Quantum well intermixing of GaAs/AlGaAs laser structure using one-step rapid thermal oxidation of AlAs, 0000 (12 November 1999); doi: 10.1117/12.370305
Proc. SPIE 3896, Multiwavelength lasers fabricated by a novel impurity-free quantum-well intermixing technology, 0000 (12 November 1999); doi: 10.1117/12.370306
Proc. SPIE 3896, Dry plasma etching of GaAs vias using BCl3/Ar and Cl2/Ar plasmas, 0000 (12 November 1999); doi: 10.1117/12.370307
Proc. SPIE 3896, Effect of etch pit density of InP substrate on the stability of InGaAs/InGaAsP quantum well laser materials, 0000 (12 November 1999); doi: 10.1117/12.370308
Polymeric Materials and Devices
Proc. SPIE 3896, Highly scattering optical transmission polymers for liquid crystal display, 0000 (12 November 1999); doi: 10.1117/12.370309
Proc. SPIE 3896, Development of metal-containing polymers for optoelectronic applications, 0000 (12 November 1999); doi: 10.1117/12.370310
Proc. SPIE 3896, Polymer light-emitting diodes based on novel soluble poly(p-phenylene vinylene), 0000 (12 November 1999); doi: 10.1117/12.370312
Proc. SPIE 3896, Optical properties and waveguiding in films of a nonlinear polymer: difluorophenyl-polydiphenylenevinylene (DFP-PDPV), 0000 (12 November 1999); doi: 10.1117/12.370317
Polymeric Devices and Optical Links
Proc. SPIE 3896, High-speed plastic optical fibers and amplifiers, 0000 (12 November 1999); doi: 10.1117/12.370318
Proc. SPIE 3896, Development of microlens arrays for integration with optoelectronic devices, 0000 (12 November 1999); doi: 10.1117/12.370319
Proc. SPIE 3896, Multigigabit/s perfluorinated graded-index plastic-optical-fiber data links with butt-coupled single-mode InGaAs VCSEL, 0000 (12 November 1999); doi: 10.1117/12.370320
Proc. SPIE 3896, Monolithically integrated detector/receiver in standard CMOS operating at 250 Mbit/s for low-cost plastic optical fiber data links, 0000 (12 November 1999); doi: 10.1117/12.370321
Fiber Lasers and Amplifiers
Proc. SPIE 3896, Fiber distributed-feedback lasers and dispersion compensators, 0000 (12 November 1999); doi: 10.1117/12.370322
Proc. SPIE 3896, Passive mode locking in erbium-ytterbium fiber lasers, 0000 (12 November 1999); doi: 10.1117/12.370323
Proc. SPIE 3896, Spectroscopy of Nd3+, Tm3+, and Er3+ ions in tellurite glasses and fibers for broadband optical fiber amplifiers in the 1350- to 1600-nm range, 0000 (12 November 1999); doi: 10.1117/12.370325
Measurement Techniques for Optoelectronics
Proc. SPIE 3896, Metrology for optoelectronics, 0000 (12 November 1999); doi: 10.1117/12.370326
Proc. SPIE 3896, Imaging the evanescent intensity gradients of an optical waveguide using a tapping-mode near-field scanning optical microscope, 0000 (12 November 1999); doi: 10.1117/12.370327
Proc. SPIE 3896, Effective index measurement of propagated modes in planar waveguide, 0000 (12 November 1999); doi: 10.1117/12.370328
Proc. SPIE 3896, Determination of white and 1/f FM noise components of semiconductor laser spectrum by a delayed self-heterodyne interferometer using short delay fiber, 0000 (12 November 1999); doi: 10.1117/12.370329
Planar Waveguides and Devices
Proc. SPIE 3896, Reconstruction of refractive index profile of planar waveguide using inverse WKB method, 0000 (12 November 1999); doi: 10.1117/12.370330
Proc. SPIE 3896, Planar add/drop two-wavelength filter employing a blazed Bragg grating and a 3x3 asymmetric coupler, 0000 (12 November 1999); doi: 10.1117/12.370331
Proc. SPIE 3896, 3C(beta)-SiC-on-insulator waveguide structures for modulators and sensor systems, 0000 (12 November 1999); doi: 10.1117/12.370332
Proc. SPIE 3896, Blazed-grating couplers in unibond SOI, 0000 (12 November 1999); doi: 10.1117/12.370333
Proc. SPIE 3896, Effective index method with built-in perturbation correction for the design of polarization-insensitive optical waveguide directional couplers, 0000 (12 November 1999); doi: 10.1117/12.370334
WDM and Optical Link Components
Sol-Gel Processing
Proc. SPIE 3896, Fabrication of gratings and design of diffractive optical elements embossed on sol-gel films, 0000 (12 November 1999); doi: 10.1117/12.370340
Proc. SPIE 3896, Deposition of sol-gel-derived inorganic and composite material films on InP for integrated optics, 0000 (12 November 1999); doi: 10.1117/12.370341
Proc. SPIE 3896, Deposition of potassium lithium niobate films by sol-gel method, 0000 (12 November 1999); doi: 10.1117/12.370342
Proc. SPIE 3896, Influence of Al/Nd ratio on light-emitting properties of Nd-doped glass prepared by sol-gel process, 0000 (12 November 1999); doi: 10.1117/12.370343
Proc. SPIE 3896, Characterization of reactive ion etching of sol-gel SiO2 using Taguchi optimization method, 0000 (12 November 1999); doi: 10.1117/12.370344
Sol-Gel Devices
Proc. SPIE 3896, TiO2/SiO2/ORMOSIL hybrid material planar waveguides prepared at low-temperature by sol-gel processing, 0000 (12 November 1999); doi: 10.1117/12.370345
Proc. SPIE 3896, Light-emitting properties of sol-gel-derived Er3+-doped Yb3+-codoped SiO2-TiO2-Al2O3 planar waveguide, 0000 (12 November 1999); doi: 10.1117/12.370347
Proc. SPIE 3896, Temperature-dependent luminescence and energy transfer in Europium and rare-earth-codoped nanostructured sol-gel SiO2 glasses, 0000 (12 November 1999); doi: 10.1117/12.370348
Proc. SPIE 3896, Structural, electrical, and optical properties of sol-gel-processed thin films of BaTiO3 on ITO glass, 0000 (12 November 1999); doi: 10.1117/12.370349
Solar Cells
Proc. SPIE 3896, Electrochemical synthesis of SnS thin films for photoelectrochemical cells, 0000 (12 November 1999); doi: 10.1117/12.370350
Unconventional Photonic Devices
Proc. SPIE 3896, Influence of the hole-carrier layer controlled by electrochemical method on electroluminescence, 0000 (12 November 1999); doi: 10.1117/12.370351
Posters Session
Proc. SPIE 3896, Polarization-sensitive performance of strained-quantum-well semiconductor optical amplifiers, 0000 (12 November 1999); doi: 10.1117/12.370353
Proc. SPIE 3896, Phase calculation of (100) oriented InGaAsSb grown with liquid phase epitaxy, 0000 (12 November 1999); doi: 10.1117/12.370354
Proc. SPIE 3896, Fabrication of infrared LEDs/LDs at wavelength of 1.5 um using LPE-grown wafer, 0000 (12 November 1999); doi: 10.1117/12.370355
Proc. SPIE 3896, Development of a laser holographic interference lithography system, 0000 (12 November 1999); doi: 10.1117/12.370356
Proc. SPIE 3896, Electrodeposited polycrystalline GaAs films and their characteristics, 0000 (12 November 1999); doi: 10.1117/12.370357