PROCEEDINGS VOLUME 3933
SYMPOSIUM ON HIGH-POWER LASERS AND APPLICATIONS | 22-28 JANUARY 2000
Laser Applications in Microelectronic and Optoelectronic Manufacturing V
SYMPOSIUM ON HIGH-POWER LASERS AND APPLICATIONS
22-28 January 2000
San Jose, CA, United States
Fundamental Processes I
Proc. SPIE 3933, Investigations of laser desorption from modified surfaces of ionic single crystals, 0000 (7 June 2000); doi: 10.1117/12.387540
Proc. SPIE 3933, Dynamical Stark effect in small quantum dots, 0000 (7 June 2000); doi: 10.1117/12.387566
Fundamental Processes II
Proc. SPIE 3933, Explosive femtosecond ablation from ionic crystals, 0000 (7 June 2000); doi: 10.1117/12.387576
Proc. SPIE 3933, Interaction of shock electromagnetic waves with transparent materials: classical approach, 0000 (7 June 2000); doi: 10.1117/12.387586
Proc. SPIE 3933, Analysis of laser ablation process in semiconductor due to ultrashort-pulsed laser with molecular dynamics simulation, 0000 (7 June 2000); doi: 10.1117/12.387594
Lasers and Techniques I
Proc. SPIE 3933, Laser technologies for manufacturing of advanced materials and devices, 0000 (7 June 2000); doi: 10.1117/12.387595
Proc. SPIE 3933, Nonlinear optical characterization of silicon wafers: in-situ detection of stacking faults and external stress, 0000 (7 June 2000); doi: 10.1117/12.387541
Proc. SPIE 3933, Influences of hydrogen in precursor Si films on excimer laser crystallization, 0000 (7 June 2000); doi: 10.1117/12.387542
Proc. SPIE 3933, Laser chemical process for clean applications of semiconductor manufacturing, 0000 (7 June 2000); doi: 10.1117/12.387543
Lasers and Techniques II
Proc. SPIE 3933, Present status and future aspects of high-power diode laser materials processing under the view of a German national research project, 0000 (7 June 2000); doi: 10.1117/12.387544
Proc. SPIE 3933, Direct writing of electronic materials using a new laser-assisted transfer/annealing technique, 0000 (7 June 2000); doi: 10.1117/12.387545
Poster Session
Proc. SPIE 3933, Laser-induced temperature-rise measurement by infrared imaging, 0000 (7 June 2000); doi: 10.1117/12.387546
Lasers and Techniques II
Proc. SPIE 3933, Stress measurements in silicon microstructures, 0000 (7 June 2000); doi: 10.1117/12.387547
Pulsed Laser Deposition I
Proc. SPIE 3933, Pulsed-laser deposition of electronic oxides: superconductor and semiconductor applications, 0000 (7 June 2000); doi: 10.1117/12.387548
Proc. SPIE 3933, Optical and electronic properties of amorphous WO3 thin film irradiated by laser in air, 0000 (7 June 2000); doi: 10.1117/12.387549
Proc. SPIE 3933, Effect of film thickness on the properties of indium tin oxide thin film grown by pulsed-laser deposition for organic light-emitting diodes, 0000 (7 June 2000); doi: 10.1117/12.387550
Pulsed Laser Deposition II
Proc. SPIE 3933, Developments of laser processing technologies in the Japanese MITI project, 0000 (7 June 2000); doi: 10.1117/12.387551
Proc. SPIE 3933, TiN growth by hybrid radical beam-PLD for Si barrier metal, 0000 (7 June 2000); doi: 10.1117/12.387552
Proc. SPIE 3933, Laser ablation of solid films at a cryogenic temperature, 0000 (7 June 2000); doi: 10.1117/12.387553
Proc. SPIE 3933, Pulsed-laser deposition of AlN thin films, 0000 (7 June 2000); doi: 10.1117/12.387554
Pulsed Laser Deposition III
Proc. SPIE 3933, Production of photoluminescent Si-based nanostructures by laser ablation: effects of ablation and postdeposition conditions, 0000 (7 June 2000); doi: 10.1117/12.387555
Proc. SPIE 3933, Pulsed-laser deposition growth of SBN and correlation study of structure and optical properties, 0000 (7 June 2000); doi: 10.1117/12.387556
Proc. SPIE 3933, Electric signal diagnostics of plasma dynamics at an early stage of laser ablation, 0000 (7 June 2000); doi: 10.1117/12.387557
Lasers and Techniques III
Proc. SPIE 3933, KrF-excimer-laser-induced ohmic metallization of ZnO substrate, 0000 (7 June 2000); doi: 10.1117/12.387558
Proc. SPIE 3933, Achievements in near-field investigations in Russia (IFMO SPb), 0000 (7 June 2000); doi: 10.1117/12.387559
Proc. SPIE 3933, Scribing blue LED wafer using laser-induced plasma-assisted ablation with a Q-switched Nd:YAG laser, 0000 (7 June 2000); doi: 10.1117/12.387560
Laser Microengineering I
Proc. SPIE 3933, Microfabrication by femtosecond laser irradiation, 0000 (7 June 2000); doi: 10.1117/12.387561
Proc. SPIE 3933, Laser micromachining: new developments and applications, 0000 (7 June 2000); doi: 10.1117/12.387562
Proc. SPIE 3933, Excimer lamp stereolithography, 0000 (7 June 2000); doi: 10.1117/12.387563
Poster Session
Proc. SPIE 3933, New infrared stereolithography: control of the parameters of the localized curing thermosensitive materials, 0000 (7 June 2000); doi: 10.1117/12.387564
Laser Microengineering II
Proc. SPIE 3933, Custom specific fabrication of integrated optical devices by excimer laser ablation of polymers, 0000 (7 June 2000); doi: 10.1117/12.387565
Proc. SPIE 3933, Laser-based microscale bending for microelectronics fabrication, 0000 (7 June 2000); doi: 10.1117/12.387567
Proc. SPIE 3933, Fabrication of microgrooves with excimer laser ablation techniques for plastic optical fiber array alignment purposes, 0000 (7 June 2000); doi: 10.1117/12.387568
Proc. SPIE 3933, Spectroscopic investigation of SiO2 surfaces of optical materials for high-power lasers, 0000 (7 June 2000); doi: 10.1117/12.387569
Laser Microengineering III
Proc. SPIE 3933, Excimer laser micromachining for fabrication of diamond diffractive optical elements, 0000 (7 June 2000); doi: 10.1117/12.387570
Proc. SPIE 3933, Microprocessing of glass materials by laser-induced plasma-assisted ablation using nanosecond pulsed lasers, 0000 (7 June 2000); doi: 10.1117/12.387571
Proc. SPIE 3933, Novel technique for high-quality microstructuring with excimer lasers, 0000 (7 June 2000); doi: 10.1117/12.387572
Proc. SPIE 3933, Micromachining by laser ablation of liquid: superheated liquid and phase explosion, 0000 (7 June 2000); doi: 10.1117/12.387573
Laser Microengineering IV
Proc. SPIE 3933, Analysis of excimer laser patterning process of Cu thin film, 0000 (7 June 2000); doi: 10.1117/12.387574
Proc. SPIE 3933, Laser beam joining of optical fibers in silicon V-grooves, 0000 (7 June 2000); doi: 10.1117/12.387575
Proc. SPIE 3933, CO2 laser drilling of printed wiring boards and development of in-process monitoring system, 0000 (7 June 2000); doi: 10.1117/12.387577
Poster Session
Proc. SPIE 3933, Pulsed x-ray emission by laser-plasma-triggered electron beam, 0000 (7 June 2000); doi: 10.1117/12.387578
Proc. SPIE 3933, Light scattering by rough dielectric surface, 0000 (7 June 2000); doi: 10.1117/12.387579
Proc. SPIE 3933, Capacitive discharge excilamps, 0000 (7 June 2000); doi: 10.1117/12.387580
Proc. SPIE 3933, Optimization of nanosecond UV laser illumination for semiconductor materials (Si, HgCdTe, InSb), 0000 (7 June 2000); doi: 10.1117/12.387581
Proc. SPIE 3933, Reprography method of nondestructive testing of micro-cracks inside the wall of a pinhole micromanufactured by laser, 0000 (7 June 2000); doi: 10.1117/12.387582
Proc. SPIE 3933, Model predicting the microhole profiles of laser drilling processes in carbon fiber composites, 0000 (7 June 2000); doi: 10.1117/12.387583
Proc. SPIE 3933, Microscopic observation of laser-induced forward transfer process by two-dimensional laser-induced fluorescence technique, 0000 (7 June 2000); doi: 10.1117/12.387584
Proc. SPIE 3933, Ion-source-assisted pulsed-laser deposition of carbon nitride thin films, 0000 (7 June 2000); doi: 10.1117/12.387585
Proc. SPIE 3933, Pulsed-laser deposition of hydrogenated amorphous carbon films from a polymeric target, 0000 (7 June 2000); doi: 10.1117/12.387587
Proc. SPIE 3933, Preparation of polyperinaphthalenic organic semiconductor thin films by excimer laser ablation and application to anode electrodes for ultrathin rechargable lithium ion batteries, 0000 (7 June 2000); doi: 10.1117/12.387588
Proc. SPIE 3933, Novel thin-film deposition method and system with IR-FEL, 0000 (7 June 2000); doi: 10.1117/12.387589
Proc. SPIE 3933, Structure and properties of porous PZT ceramics synthesized by selective laser sintering method, 0000 (7 June 2000); doi: 10.1117/12.387590
Proc. SPIE 3933, Selectively deposited copper on laser-treated polyimide using electroless plating, 0000 (7 June 2000); doi: 10.1117/12.387591
Laser Microengineering IV
Proc. SPIE 3933, High-accuracy microdrilling of steel with solid state UV laser at a rate of 10 mm/sec, 0000 (7 June 2000); doi: 10.1117/12.387592
Laser Microengineering I
Proc. SPIE 3933, Femtosecond pulse laser machining of InP wafers, 0000 (7 June 2000); doi: 10.1117/12.387593
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