PROCEEDINGS VOLUME 3938
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS | 20-26 JANUARY 2000
Light-Emitting Diodes: Research, Manufacturing, and Applications IV
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS
20-26 January 2000
San Jose, CA, United States
III-Nitride Light-Emitting Diodes I
High-Efficiency LEDs
Proc. SPIE 3938, Nonresonant-cavity light-emitting diodes, 0000 (17 April 2000); doi: 10.1117/12.382829
III-Nitride Light-Emitting Diodes I
Proc. SPIE 3938, GaN-based MQW light-emitting devices, 0000 (17 April 2000); doi: 10.1117/12.382839
Proc. SPIE 3938, White-light-emitting diodes for illumination, 0000 (17 April 2000); doi: 10.1117/12.382840
High-Efficiency LEDs
Proc. SPIE 3938, 45% quantum-efficiency light-emitting diodes with radial outcoupling taper, 0000 (17 April 2000); doi: 10.1117/12.382841
III-Nitride Light-Emitting Diodes I
Proc. SPIE 3938, Design and performance of nitride-based UV LEDs, 0000 (17 April 2000); doi: 10.1117/12.382842
High-Efficiency LEDs
III-Nitride Light-Emitting Diodes II
Proc. SPIE 3938, Photon recycling semiconductor light-emitting diode, 0000 (17 April 2000); doi: 10.1117/12.382814
Proc. SPIE 3938, InGaAlP and InGaN light-emitting diodes: high-power performance and reliability, 0000 (17 April 2000); doi: 10.1117/12.382815
High-Efficiency LEDs
Proc. SPIE 3938, Resonant-cavity LEDs at 655- and 880-nm wavelengths, 0000 (17 April 2000); doi: 10.1117/12.382816
III-Nitride Light-Emitting Diodes II
III-Nitrides and Related Materials
III-As and III-P LEDs
Proc. SPIE 3938, Improved-efficiency positive and negative luminescent light-emitting devices for mid-infrared gas-sensing applications, 0000 (17 April 2000); doi: 10.1117/12.382825
Proc. SPIE 3938, Native oxided AlAs current blocking layer for AlGaInP high-brightness light-emitting diodes, 0000 (17 April 2000); doi: 10.1117/12.382826
Novel Structures and Materials
Proc. SPIE 3938, Substrate-removed 850-nm RCLEDs and small core (63/125 um) plastic optical fibers for optical data communication, 0000 (17 April 2000); doi: 10.1117/12.382827
Proc. SPIE 3938, Efficiency optimization in ionically self-assembled thin film polymer light-emitting diodes, 0000 (17 April 2000); doi: 10.1117/12.382828
Proc. SPIE 3938, LED backlight: design, fabrication, and testing, 0000 (17 April 2000); doi: 10.1117/12.382830
Proc. SPIE 3938, Multispectral reflectance-mode fiber optic deposition rate monitor, 0000 (17 April 2000); doi: 10.1117/12.382831
Proc. SPIE 3938, Long-wavelength shift of ZnSSe metal-semiconductor-metal light-emitting diodes with high injection currents, 0000 (17 April 2000); doi: 10.1117/12.382832
Poster Session
Proc. SPIE 3938, Effects of buffer layer growth conditions on the GaN epilayer quality by MOCVD, 0000 (17 April 2000); doi: 10.1117/12.382833
Proc. SPIE 3938, Ohmic contacts to GaN with rapid thermal annealing, 0000 (17 April 2000); doi: 10.1117/12.382834
Proc. SPIE 3938, Optical properties of Fe(1-x)CoxSi2 thin films, 0000 (17 April 2000); doi: 10.1117/12.382835
Proc. SPIE 3938, Characterizing white LEDs for general illumination applications, 0000 (17 April 2000); doi: 10.1117/12.382836
Proc. SPIE 3938, High-performance epoxy casting resins for SMD-LED packaging, 0000 (17 April 2000); doi: 10.1117/12.382837
Novel Structures and Materials
Proc. SPIE 3938, 4-mW microcavity LED at 650 nm on germanium substrates, 0000 (17 April 2000); doi: 10.1117/12.382838
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