PROCEEDINGS VOLUME 3947
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS | 20-26 JANUARY 2000
In-Plane Semiconductor Lasers IV
IN THIS VOLUME

0 Sessions, 26 Papers, 0 Presentations
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS
20-26 January 2000
San Jose, CA, United States
High-Power Lasers I
Proc. SPIE 3947, U.S. DoD interests in in-plane semiconductor lasers, 0000 (18 April 2000); doi: 10.1117/12.382083
Proc. SPIE 3947, High-power highly reliable Al-free active region laser diodes in the 785- to 830-nm region, 0000 (18 April 2000); doi: 10.1117/12.382091
Proc. SPIE 3947, Highly efficient reliable lasers for 830-nm wavelength range, 0000 (18 April 2000); doi: 10.1117/12.382101
Proc. SPIE 3947, Optimization of GaAsP-QWs for high-power diode lasers at 800 nm, 0000 (18 April 2000); doi: 10.1117/12.382104
High-Power Lasers II
Proc. SPIE 3947, High-brightness tapered laser sources in the 1.3- to 2.0-um wavelength range, 0000 (18 April 2000); doi: 10.1117/12.382105
Proc. SPIE 3947, High-power AlGaInAs/GaAs microstack laser bars, 0000 (18 April 2000); doi: 10.1117/12.382106
Proc. SPIE 3947, Residual oxygen contamination of InAlGaAs SQW high-power laser diodes, 0000 (18 April 2000); doi: 10.1117/12.382107
Proc. SPIE 3947, High-efficiency low-vertical-divergence-angle 980-nm Al-free active region lasers with novel large optical cavity and asymmetrical cladding layers, 0000 (18 April 2000); doi: 10.1117/12.382108
Visible Lasers
Proc. SPIE 3947, 100-mW cw operation of 650- to 685-nm red lasers with window-mirror-structure, 0000 (18 April 2000); doi: 10.1117/12.382084
Proc. SPIE 3947, High-power and diffraction-limited red lasers, 0000 (18 April 2000); doi: 10.1117/12.382085
Proc. SPIE 3947, High-power and high-brightness visible semiconductor laser diodes, 0000 (18 April 2000); doi: 10.1117/12.382086
Mid-IR Lasers I
Proc. SPIE 3947, Mid infrared IV/VI diode laser output characteristics, 0000 (18 April 2000); doi: 10.1117/12.382088
Mid-IR Lasers II
Proc. SPIE 3947, Interband cascade lasers, 0000 (18 April 2000); doi: 10.1117/12.382089
Proc. SPIE 3947, Mid-IR type-II InAs/GaInSb interband cascade lasers, 0000 (18 April 2000); doi: 10.1117/12.382090
Proc. SPIE 3947, High-power optically pumped type-II QW lasers grown on GaAs compliant substrate, 0000 (18 April 2000); doi: 10.1117/12.382092
Proc. SPIE 3947, High-power mid-infrared lasers based on type-II heterostructures with asymmetric band offset confinement, 0000 (18 April 2000); doi: 10.1117/12.382093
Visible Lasers II
Proc. SPIE 3947, Comparative study of near-threshold gain mechanisms in GaN epilayers and GaN/AlGaN separate confinement heterostructures, 0000 (18 April 2000); doi: 10.1117/12.382095
Proc. SPIE 3947, Advances in laser diode development for high resolution and high-speed printing, 0000 (18 April 2000); doi: 10.1117/12.382096
Novel Lasers and Materials
Proc. SPIE 3947, Circular lasers for telecommunications and rf/photonics applications, 0000 (18 April 2000); doi: 10.1117/12.382097
Proc. SPIE 3947, Active microdisk devices, 0000 (18 April 2000); doi: 10.1117/12.382098
Proc. SPIE 3947, Single-mode single-lobe operation of surface-emitting second-order distributed feedback lasers, 0000 (18 April 2000); doi: 10.1117/12.382099
Proc. SPIE 3947, Ridge waveguide 1.55-um DFB lasers with uncooled 10-Gb/s operation at 55 degrees C, 0000 (18 April 2000); doi: 10.1117/12.382100
Proc. SPIE 3947, Quantum-well heterostructure laser diodes with flat widely tunable gain spectra, 0000 (18 April 2000); doi: 10.1117/12.382102
Proc. SPIE 3947, Anomalous behavior of coupling coefficient effect and spatial carrier density variation inside sampled grating DFB lasers, 0000 (18 April 2000); doi: 10.1117/12.382103
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