PROCEEDINGS VOLUME 3948
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS | 20-26 JANUARY 2000
Photodetectors: Materials and Devices V
SYMPOSIUM ON INTEGRATED OPTOELECTRONICS
20-26 January 2000
San Jose, CA, United States
Infrared Detectors and Materials I
Proc. SPIE 3948, Optoelectronics research at the Army Research Laboratory, 0000 (13 April 2000); doi: 10.1117/12.382117
Proc. SPIE 3948, Dual-band infrared detectors, 0000 (13 April 2000); doi: 10.1117/12.382128
Proc. SPIE 3948, III-V infrared detectors on Si substrates, 0000 (13 April 2000); doi: 10.1117/12.382136
Infrared Detectors and Materials II
Proc. SPIE 3948, State-of-the-art HgCdTe infrared devices, 0000 (13 April 2000); doi: 10.1117/12.382141
Proc. SPIE 3948, Effect of annealing on arsenic activation and device performance in mid-infrared HgCdTe on silicon grown by MBE, 0000 (13 April 2000); doi: 10.1117/12.382143
Proc. SPIE 3948, Mid-IR InAsSb photovoltaic detectors, 0000 (13 April 2000); doi: 10.1117/12.382144
Uncooled Photodetectors
Proc. SPIE 3948, Tunable narrow-band filter for LWIR hyperspectral imaging, 0000 (13 April 2000); doi: 10.1117/12.382145
Proc. SPIE 3948, Infrared vision using uncooled optomechanical camera, 0000 (13 April 2000); doi: 10.1117/12.382146
Proc. SPIE 3948, Micromechanical uncooled photon detectors, 0000 (13 April 2000); doi: 10.1117/12.382109
Proc. SPIE 3948, High-sensitivity 8- to 14-um HgCdTe photodetectors operated at ambient temperature, 0000 (13 April 2000); doi: 10.1117/12.382110
Superlattices for Infrared Detectors
Proc. SPIE 3948, InAs/GaInSb strained layer superlattice as an infrared detector material: an overview, 0000 (13 April 2000); doi: 10.1117/12.382111
Proc. SPIE 3948, Type-II InAs/InGaSb SL photodetectors, 0000 (13 April 2000); doi: 10.1117/12.382112
Proc. SPIE 3948, Growth and characterization of very long wavelength type-II infrared detectors, 0000 (13 April 2000); doi: 10.1117/12.382113
Proc. SPIE 3948, Growth and characterization of type-II nonequilibrium photovoltaic detectors for long-wavelength infrared range, 0000 (13 April 2000); doi: 10.1117/12.382114
High-Speed Detectors
Proc. SPIE 3948, InP photodetectors for millimeter-wave applications, 0000 (13 April 2000); doi: 10.1117/12.382115
Proc. SPIE 3948, High-speed GaAs-based resonant-cavity-enhanced 1.3-um photodetector, 0000 (13 April 2000); doi: 10.1117/12.382116
Proc. SPIE 3948, Analysis and design of traveling-wave photodetectors for rf optical link communication using the finite-difference time-domain method, 0000 (13 April 2000); doi: 10.1117/12.382118
Proc. SPIE 3948, Effect of carrier drift on the characteristics of 1.55-um traveling-wave ridge-coplanar waveguide photodetector, 0000 (13 April 2000); doi: 10.1117/12.382119
Quantum-Designed Photodiodes
Proc. SPIE 3948, Microscopic model of impact ionization in AlxGa1-xSb, 0000 (13 April 2000); doi: 10.1117/12.382120
Proc. SPIE 3948, Electron and photon effects in imaging devices utilizing quantum dot infrared photodetectors and light-emitting diodes, 0000 (13 April 2000); doi: 10.1117/12.382121
Proc. SPIE 3948, High-responsivity GaInAs/InP quantum well infrared photodetectors grown by low-pressure metalorganic chemical vapor deposition, 0000 (13 April 2000); doi: 10.1117/12.382122
Proc. SPIE 3948, Growth and optimization of GaInAsP/InP material system for quantum well infrared photodetector applications, 0000 (13 April 2000); doi: 10.1117/12.382123
Photodiodes for Ultraviolet Detection I
Proc. SPIE 3948, AlGaN-based structures on sapphire for visible blind Schottky-barrier UV photodetectors: toward high-performance device applications, 0000 (13 April 2000); doi: 10.1117/12.382124
Proc. SPIE 3948, High-performance GaN/AlGaN-based ultraviolet photodetectors, 0000 (13 April 2000); doi: 10.1117/12.382125
Proc. SPIE 3948, Solar-blind AlxGa1-xN p-i-n photodetectors grown on LEO and non-LEO GaN, 0000 (13 April 2000); doi: 10.1117/12.382126
Proc. SPIE 3948, GaN homojunction and AlGaN/GaN heterojunction visible-blind photodiodes grown on SiC, 0000 (13 April 2000); doi: 10.1117/12.382127
Photodiodes for Ultraviolet Detection II
Proc. SPIE 3948, Detailed feasibility study on a flame detector using AlGaN photosensors, 0000 (13 April 2000); doi: 10.1117/12.382129
Proc. SPIE 3948, Group III-nitride materials for ultraviolet detection applications, 0000 (13 April 2000); doi: 10.1117/12.382130
Proc. SPIE 3948, High quantum efficiency AlxGa1-xN/GaN-based ultraviolet p-i-n photodetectors with a recessed window structure, 0000 (13 April 2000); doi: 10.1117/12.382131
Proc. SPIE 3948, GaN photodiodes grown by MBE on HVPE and ELO-HVPE GaN\sapphire substrates, 0000 (13 April 2000); doi: 10.1117/12.382132
Photodiodes for Ultraviolet Detection III
Proc. SPIE 3948, LEO of III-nitride on Al2O3 and Si substrates, 0000 (13 April 2000); doi: 10.1117/12.382133
Proc. SPIE 3948, Electrical properties of AlxGa1-xN materials for UV photodetector applications, 0000 (13 April 2000); doi: 10.1117/12.382134
Proc. SPIE 3948, GaN Schottky diode ultraviolet detectors grown by molecular beam epitaxy, 0000 (13 April 2000); doi: 10.1117/12.382135
Materials Characterization
Proc. SPIE 3948, Ultraviolet detector materials and devices studied by femtosecond nonlinear optical techniques, 0000 (13 April 2000); doi: 10.1117/12.382137
Proc. SPIE 3948, Growth and optical investigations of InN textured layers, 0000 (13 April 2000); doi: 10.1117/12.382138
Poster Session
Proc. SPIE 3948, Spike-like noises of pyroelectric thermal detector, 0000 (13 April 2000); doi: 10.1117/12.382139
Proc. SPIE 3948, LPE growth of Hg1-xCdxTe heterostructures using a novel tipping boat, 0000 (13 April 2000); doi: 10.1117/12.382140
Proc. SPIE 3948, Simplified circuit model for MSM photodetectors, 0000 (13 April 2000); doi: 10.1117/12.382142
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