PROCEEDINGS VOLUME 3997
MICROLITHOGRAPHY 2000 | FEB 27 - MAR 3 2000
Emerging Lithographic Technologies IV
MICROLITHOGRAPHY 2000
Feb 27 - Mar 3 2000
Santa Clara, CA, United States
Emerging Lithographies: A Global Picture
Proc. SPIE 3997, Overview of ASET PXL and EUVL programs in Japan, 0000 (21 July 2000); doi: 10.1117/12.390032
Proc. SPIE 3997, Overview and status of the Next Generation Lithography Mask Center of Competency, 0000 (21 July 2000); doi: 10.1117/12.390052
Proc. SPIE 3997, Overview of the ion projection lithography European MEDEA and international program, 0000 (21 July 2000); doi: 10.1117/12.390063
Extreme Ultraviolet Lithography
Proc. SPIE 3997, EUCLIDES: first phase completed!, 0000 (21 July 2000); doi: 10.1117/12.390073
Proc. SPIE 3997, Recent advances of three-aspherical-mirror system for EUVL, 0000 (21 July 2000); doi: 10.1117/12.390091
Proc. SPIE 3997, EUV mask fabrication with Cr absorber, 0000 (21 July 2000); doi: 10.1117/12.390099
Proc. SPIE 3997, High-precision reflectometry of multilayer coatings for extreme ultraviolet lithography, 0000 (21 July 2000); doi: 10.1117/12.390107
X-Ray Lithography
Proc. SPIE 3997, Printing characteristics of proximity x-ray lithography and comparison with optical lithography for 100-nm node and below, 0000 (21 July 2000); doi: 10.1117/12.390116
Proc. SPIE 3997, Delineation performances of advanced 100-kV EB writer on x-ray membrane mask, 0000 (21 July 2000); doi: 10.1117/12.390033
Proc. SPIE 3997, Stress relaxation of EB resist for x-ray mask fabrication, 0000 (21 July 2000); doi: 10.1117/12.390046
EUV Sources
Proc. SPIE 3997, Development of an electric capillary discharge source, 0000 (21 July 2000); doi: 10.1117/12.390047
Proc. SPIE 3997, Relationship between an EUV source and the performance of an EUV lithographic system, 0000 (21 July 2000); doi: 10.1117/12.390048
Poster Session
Proc. SPIE 3997, Xenon liquid-jet laser plasma source for EUV lithography, 0000 (21 July 2000); doi: 10.1117/12.390049
EUV Sources
Proc. SPIE 3997, Characterization of a novel double-gas-jet laser plasma EUV source, 0000 (21 July 2000); doi: 10.1117/12.390050
Proc. SPIE 3997, Extreme ultraviolet light generation based on laser-produced plasmas (LPP) and gas-discharge-based pinch plasmas: a comparison of different concepts, 0000 (21 July 2000); doi: 10.1117/12.390051
SCALPEL
Proc. SPIE 3997, Comprehensive analysis of electron optical design of SCALPEL-HT/Alpha, 0000 (21 July 2000); doi: 10.1117/12.390053
Proc. SPIE 3997, Etching 200-mm diameter SCALPEL masks with the ASE process, 0000 (21 July 2000); doi: 10.1117/12.390054
Proc. SPIE 3997, Optimization of DUV chemically amplified resist platforms for SCALPEL e-beam exposure, 0000 (21 July 2000); doi: 10.1117/12.390055
Projection Electron-Beam Lithography
Proc. SPIE 3997, PREVAIL: IBM's e-beam technology for next generation lithography, 0000 (21 July 2000); doi: 10.1117/12.390056
Proc. SPIE 3997, Nikon EB stepper: its system concept and countermeasures for critical issues, 0000 (21 July 2000); doi: 10.1117/12.390057
Proc. SPIE 3997, Resolution limit in character projection e-beam system, 0000 (21 July 2000); doi: 10.1117/12.390058
Proc. SPIE 3997, Investigation of proximity effect correction in electron projection lithography (EPL), 0000 (21 July 2000); doi: 10.1117/12.390059
Proc. SPIE 3997, Modeling of projection electron lithography, 0000 (21 July 2000); doi: 10.1117/12.390060
Mask Fabrication
Proc. SPIE 3997, Control of resist heating effect, 0000 (21 July 2000); doi: 10.1117/12.390061
Proc. SPIE 3997, Image size control in next generation lithography masks, 0000 (21 July 2000); doi: 10.1117/12.390062
Proc. SPIE 3997, Chemically amplified resists for electron-beam projection lithography mask fabrication, 0000 (21 July 2000); doi: 10.1117/12.390064
Proc. SPIE 3997, Initial benchmarking of a new electron-beam raster pattern generator for 130-100 nm maskmaking, 0000 (21 July 2000); doi: 10.1117/12.390065
Proc. SPIE 3997, Edge roughness evaluation method for quantifying at-size beam blur in electron-beam lithography, 0000 (21 July 2000); doi: 10.1117/12.390066
Proc. SPIE 3997, Evaluation of a high-dose extended multipass gray writing system for 130-nm pattern generation, 0000 (21 July 2000); doi: 10.1117/12.390067
NGL Resists
Proc. SPIE 3997, Manufacturability of the ultrathin resist process, 0000 (21 July 2000); doi: 10.1117/12.390068
Proc. SPIE 3997, Patterning of highly conducting polyaniline films, 0000 (21 July 2000); doi: 10.1117/12.390069
Proc. SPIE 3997, Optimization of PHS-based chemically amplified negative resist for 100-kV electron-beam projection lithography (EPL), 0000 (21 July 2000); doi: 10.1117/12.390070
Proc. SPIE 3997, CA resist with high sensitivity and sub-100-nm resolution for advanced mask and device making, 0000 (21 July 2000); doi: 10.1117/12.390071
Ion Projection Lithography
Proc. SPIE 3997, Resist technologies for ion projection lithography (IPL) stencil maskmaking, 0000 (21 July 2000); doi: 10.1117/12.390072
Proc. SPIE 3997, Stencil mask key parameter measurement and control, 0000 (21 July 2000); doi: 10.1117/12.390074
Proc. SPIE 3997, IPL stencil mask distortions: experimental and theoretical analysis, 0000 (21 July 2000); doi: 10.1117/12.390075
Proc. SPIE 3997, Stress engineering of SOI silicon stencil masks by boron doping concentration, 0000 (21 July 2000); doi: 10.1117/12.390076
EUV Optical Coatings
Proc. SPIE 3997, Progress in Mo/Si multilayer coating technology for EUVL optics, 0000 (21 July 2000); doi: 10.1117/12.390077
Proc. SPIE 3997, Improved theoretical reflectivities of extreme ultraviolet mirrors, 0000 (21 July 2000); doi: 10.1117/12.390078
Proc. SPIE 3997, Magnetron sputtered EUV mirrors with high-thermal stability, 0000 (21 July 2000); doi: 10.1117/12.390079
Proc. SPIE 3997, Actinic defect counting statistics over 1-cm2 area of EUVL mask blank, 0000 (21 July 2000); doi: 10.1117/12.390080
Manufacturing Processes for Nanofabrication
Proc. SPIE 3997, Large-area nanoimprint fabrication of sub-100-nm interdigitated metal arrays, 0000 (21 July 2000); doi: 10.1117/12.390081
Proc. SPIE 3997, Step and flash imprint lithography for sub-100-nm patterning, 0000 (21 July 2000); doi: 10.1117/12.390082
Proc. SPIE 3997, Sub-10-nm electron-beam lithography with sub-10-nm overlay accuracy, 0000 (21 July 2000); doi: 10.1117/12.390084
Proc. SPIE 3997, Lossless layout compression for maskless lithography systems, 0000 (21 July 2000); doi: 10.1117/12.390085
Proc. SPIE 3997, Next generation lithography (NGL) concept application in x-ray lithography, 0000 (21 July 2000); doi: 10.1117/12.390086
Poster Session
Proc. SPIE 3997, Smooth low-stress sputtered tantalum and tantalum alloy films for the absorber material of reflective-type EUVL, 0000 (21 July 2000); doi: 10.1117/12.390087
Proc. SPIE 3997, Extreme ultraviolet lithography: reflective mask technology, 0000 (21 July 2000); doi: 10.1117/12.390088
Proc. SPIE 3997, Film stress changes during anodic bonding of NGL masks, 0000 (21 July 2000); doi: 10.1117/12.390089
Proc. SPIE 3997, Evaluation of negative DUV resist UVN30 for electron-beam exposure of NGL masks, 0000 (21 July 2000); doi: 10.1117/12.390090
Proc. SPIE 3997, Processing latitude study on x-ray phase-shifting masks, 0000 (21 July 2000); doi: 10.1117/12.390092
Proc. SPIE 3997, Comparison of substrate curvature and resonant frequency thin film stress mapping techniques, 0000 (21 July 2000); doi: 10.1117/12.390093
Proc. SPIE 3997, Thermomechanical modeling of the SCALPEL mask during exposure, 0000 (21 July 2000); doi: 10.1117/12.390094
Proc. SPIE 3997, Repair method on silicon stencil reticles for EB projection lithography, 0000 (21 July 2000); doi: 10.1117/12.390095
Proc. SPIE 3997, Pattern transfer distortions in IPL and EPL masks with pattern density gradients, 0000 (21 July 2000); doi: 10.1117/12.390096