PROCEEDINGS VOLUME 3998
MICROLITHOGRAPHY 2000 | FEB 27 - MAR 3 2000
Metrology, Inspection, and Process Control for Microlithography XIV
MICROLITHOGRAPHY 2000
Feb 27 - Mar 3 2000
Santa Clara, CA, United States
New Frontiers
Proc. SPIE 3998, 1999 ITRS metrology roadmap and its implications for lithography, 0000 (2 June 2000); doi: 10.1117/12.386443
SEM Methods for CD Metrology I
Proc. SPIE 3998, Comparison of electrical CD measurements and cross-section lattice-plane counts of submicrometer features replicated in (100) silicon-on-insulator material, 0000 (2 June 2000); doi: 10.1117/12.386479
Proc. SPIE 3998, Linewidth measurement intercomparison on a BESOI sample, 0000 (2 June 2000); doi: 10.1117/12.386488
Proc. SPIE 3998, 193-nm scanner characterization by SEM and electrical CD measurements, 0000 (2 June 2000); doi: 10.1117/12.386499
Electrical Methods for CD Metrology
Proc. SPIE 3998, Benchmarking of advanced CD-SEMs against the new unified specification for sub-0.18-um lithography, 0000 (2 June 2000); doi: 10.1117/12.386524
Proc. SPIE 3998, Potentials of online scanning electron microscope performance analysis using NIST reference material 8091, 0000 (2 June 2000); doi: 10.1117/12.386534
SEM Methods for CD Metrology I
Proc. SPIE 3998, Metrics of resolution and performance for CD-SEMs, 0000 (2 June 2000); doi: 10.1117/12.386444
Electrical Methods for CD Metrology
Proc. SPIE 3998, Is a production-level scanning electron microscope linewidth standard possible?, 0000 (2 June 2000); doi: 10.1117/12.386452
Proc. SPIE 3998, Improving stigmation control of the CD-SEM, 0000 (2 June 2000); doi: 10.1117/12.386460
Proc. SPIE 3998, E-beam column monitoring for improved CD SEM stability and tool matching, 0000 (2 June 2000); doi: 10.1117/12.386463
Optical Methods for CD Metrology
Proc. SPIE 3998, Phase profilometry for the 193-nm lithography gate stack, 0000 (2 June 2000); doi: 10.1117/12.386464
Proc. SPIE 3998, Manufacturing considerations for implementation of scatterometry for process monitoring, 0000 (2 June 2000); doi: 10.1117/12.386465
Proc. SPIE 3998, Scatterometry for the measurement of metal features, 0000 (2 June 2000); doi: 10.1117/12.386466
Proc. SPIE 3998, Lithographic process monitoring using diffraction measurements, 0000 (2 June 2000); doi: 10.1117/12.386467
Proc. SPIE 3998, Process window metrology, 0000 (2 June 2000); doi: 10.1117/12.386468
Process Control/Evaluation
Proc. SPIE 3998, Design and analysis of across-chip linewidth variation for printed features at 130 nm and below, 0000 (2 June 2000); doi: 10.1117/12.386469
Proc. SPIE 3998, Process control and optimization of conventional metal process for 0.18-micron logic technology, 0000 (2 June 2000); doi: 10.1117/12.386470
Proc. SPIE 3998, New process monitor for reticles and wafers: the MEEF meter, 0000 (2 June 2000); doi: 10.1117/12.386471
Proc. SPIE 3998, Influence of intermetal dielectric thickness on overlay mark size variation in photolithography, 0000 (2 June 2000); doi: 10.1117/12.386472
SEM Methods for CD Metrology II
Proc. SPIE 3998, Dimensional metrology system of shape and scale in pattern transfer, 0000 (2 June 2000); doi: 10.1117/12.386473
Proc. SPIE 3998, Automated process control monitor for 0.18-um technology and beyond, 0000 (2 June 2000); doi: 10.1117/12.386474
Proc. SPIE 3998, Feature integrity monitoring for process control using a CD SEM, 0000 (2 June 2000); doi: 10.1117/12.386475
Proc. SPIE 3998, Shape control using sidewall imaging, 0000 (2 June 2000); doi: 10.1117/12.386476
Proc. SPIE 3998, Computer modeling of charging-induced electron beam deflection in electron beam lithography, 0000 (2 June 2000); doi: 10.1117/12.386477
Defect Detection I
Proc. SPIE 3998, Survey of semiconductor data management systems technology, 0000 (2 June 2000); doi: 10.1117/12.386478
Proc. SPIE 3998, SEM-based ADC evaluation and integration in an advanced process fab, 0000 (2 June 2000); doi: 10.1117/12.386480
Proc. SPIE 3998, Paradigm for selecting the optimum classifier in semiconductor automatic defect classification applications, 0000 (2 June 2000); doi: 10.1117/12.386481
Proc. SPIE 3998, Process-induced defects in sub-0.15-nm device patterning using 193-nm lithography, 0000 (2 June 2000); doi: 10.1117/12.386482
Proc. SPIE 3998, Clean solutions to the incoming wafer quality impact on lithography process yield limits in a dynamic copper/low-k research and development environment, 0000 (2 June 2000); doi: 10.1117/12.386483
Proc. SPIE 3998, Lithography process control and optimization based on defect capture and reduction, 0000 (2 June 2000); doi: 10.1117/12.386484
Defect Detection II
Proc. SPIE 3998, Use of intentional-defect wafers for tool inspection validation, 0000 (2 June 2000); doi: 10.1117/12.386485
Proc. SPIE 3998, Alternating PSM phase defect printability for 100-nm KrF lithography, 0000 (2 June 2000); doi: 10.1117/12.386486
Proc. SPIE 3998, Printability of reticle repairs in a 248-nm DUV production environment, 0000 (2 June 2000); doi: 10.1117/12.386487
Proc. SPIE 3998, Design considerations for a photo track monitor reticle, 0000 (2 June 2000); doi: 10.1117/12.386489
AFM Methods for CD Metrology
Proc. SPIE 3998, Photomask CD correlation of an optical linewidth measurement tool and a scanning electron microscope with reference to a Stylus NanoProfilometer, 0000 (2 June 2000); doi: 10.1117/12.386490
Proc. SPIE 3998, Experiments in mask metrology using a CD AFM, 0000 (2 June 2000); doi: 10.1117/12.386491
Proc. SPIE 3998, Accurate dimensional metrology with atomic force microscopy, 0000 (2 June 2000); doi: 10.1117/12.386492
Thin-Film Metrology
Proc. SPIE 3998, Integrated reflectance for monitoring silicon oxynitride antireflective coatings on a CVD cluster tool, 0000 (2 June 2000); doi: 10.1117/12.386493
Proc. SPIE 3998, New purged UV spectroscopic ellipsometer to characterize thin films and multilayers at 157 nm, 0000 (2 June 2000); doi: 10.1117/12.386494
Proc. SPIE 3998, Optical characterization in the vacuum ultraviolet with variable angle spectroscopic ellipsometry: 157 nm and below, 0000 (2 June 2000); doi: 10.1117/12.386495
Overlay Metrology
Proc. SPIE 3998, Overlay measurement: hidden error, 0000 (2 June 2000); doi: 10.1117/12.386496
Proc. SPIE 3998, Predictive process control for sub-0.2-um lithography, 0000 (2 June 2000); doi: 10.1117/12.386497
Proc. SPIE 3998, Overlay performance on tungsten CMP layers using the ATHENA alignment system, 0000 (2 June 2000); doi: 10.1117/12.386498
Proc. SPIE 3998, Effects of alignment accuracy on CMP process for overlay control, 0000 (2 June 2000); doi: 10.1117/12.386500
Proc. SPIE 3998, Subwavelength alignment mark signal analysis of advanced memory products, 0000 (2 June 2000); doi: 10.1117/12.386501
Proc. SPIE 3998, Reduction of wafer-scale error between DI and FI in multilevel metallization by adjusting edge detection method, 0000 (2 June 2000); doi: 10.1117/12.386502
Advanced Technology/Late-Breaking Developments
Proc. SPIE 3998, The Neolithography Consortium, 0000 (2 June 2000); doi: 10.1117/12.386503
Proc. SPIE 3998, FIB metrology in advanced lithography, 0000 (2 June 2000); doi: 10.1117/12.386504
Proc. SPIE 3998, Accelerated yield learning in agressive lithography, 0000 (2 June 2000); doi: 10.1117/12.386505
Proc. SPIE 3998, Defects and metrology of ultrathin resist films, 0000 (2 June 2000); doi: 10.1117/12.386506
Poster Session
Proc. SPIE 3998, Characterization and modeling of out-diffusion of cesium, manganese, and zinc impurities from deep-ultraviolet photoresist, 0000 (2 June 2000); doi: 10.1117/12.386507
Proc. SPIE 3998, Contamination control during shipping, handling, and storage of reticles, 0000 (2 June 2000); doi: 10.1117/12.386508
Proc. SPIE 3998, Modular monitoring for the photolithography environment, 0000 (2 June 2000); doi: 10.1117/12.386509
Proc. SPIE 3998, Wafer-level colinearity monitoring for TFH applications, 0000 (2 June 2000); doi: 10.1117/12.386510
Proc. SPIE 3998, Diffusion and adsorption mechanism of metallic impurities from chemically amplified photoresist onto silicon-based substrates, 0000 (2 June 2000); doi: 10.1117/12.386511
Proc. SPIE 3998, New voltage-contrast imaging method for detection of electrical failures, 0000 (2 June 2000); doi: 10.1117/12.386512