PROCEEDINGS VOLUME 3999
MICROLITHOGRAPHY 2000 | 27 FEBRUARY - 3 MARCH 2000
Advances in Resist Technology and Processing XVII
MICROLITHOGRAPHY 2000
27 February - 3 March 2000
Santa Clara, CA, United States
ArF: Materials
Proc. SPIE 3999, Dissolution/swelling behavior of cycloolefin polymers in aqueous base, 0000 (23 June 2000); doi: 10.1117/12.388254
Proc. SPIE 3999, ArF photoresist containing novel acid labile cross-linker for high contrast and PED stability, 0000 (23 June 2000); doi: 10.1117/12.388303
Proc. SPIE 3999, Structurally variable cyclopolymers with excellent etch resistance and their application to 193-nm lithography, 0000 (23 June 2000); doi: 10.1117/12.388314
ArF: Materials and Processing
Proc. SPIE 3999, 193-nm photoresists at 130-nm node: which lithographic performances for which chemical platform?, 0000 (23 June 2000); doi: 10.1117/12.388323
Proc. SPIE 3999, Design and synthesis of new photoresist materials for ArF lithography, 0000 (23 June 2000); doi: 10.1117/12.388333
Proc. SPIE 3999, Negative-tone 193-nm resists, 0000 (23 June 2000); doi: 10.1117/12.388343
Proc. SPIE 3999, Minimization of the iso-dense bias in chemically amplified 193-nm positive resists: influence and monitoring of the diffusion well, 0000 (23 June 2000); doi: 10.1117/12.388352
Proc. SPIE 3999, Negative-tone resist for phase-shifting mask technology: a progress report, 0000 (23 June 2000); doi: 10.1117/12.388361
ArF: Fundamental Studies
Proc. SPIE 3999, Solid-state NMR characterization of resist formulations for 193-nm lithography: chain dynamics and length scale of mixing, 0000 (23 June 2000); doi: 10.1117/12.388370
Proc. SPIE 3999, 193-nm chemically amplified positive resists based on poly(norbornene-alt-maleic anhydride) with plasticizing additives, 0000 (23 June 2000); doi: 10.1117/12.388255
Proc. SPIE 3999, Model study by FT-IR and 13C NMR of the interaction of poly(norbornene-alt-maleic anhydride) and its derivatives with select cholate dissolution inhibitors or with select iodonium and sulfonium phot, 0000 (23 June 2000); doi: 10.1117/12.388265
Proc. SPIE 3999, Mechanism of single-layer 193-nm dissolution inhibition resist, 0000 (23 June 2000); doi: 10.1117/12.388275
Proc. SPIE 3999, Defect printing issues with high-contrast chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388284
ArF, KrF: Fundamental PAG Studies
Proc. SPIE 3999, Effect of resist components on image spreading during postexposure bake of chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388294
Proc. SPIE 3999, Spectroscopic characterization of acid mobility in chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388299
Proc. SPIE 3999, Modeling chemically amplified resists for 193-nm lithography, 0000 (23 June 2000); doi: 10.1117/12.388300
Proc. SPIE 3999, Real-time analysis of volatiles formed during processing of a chemically amplified resist, 0000 (23 June 2000); doi: 10.1117/12.388301
ArF, KrF: Fundamental Studies
Proc. SPIE 3999, Comparison of methods for acid quantification: impact of resist components on acid-generating efficiency, 0000 (23 June 2000); doi: 10.1117/12.388302
Proc. SPIE 3999, Radiation and photochemistry of onium salt acid generators in chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388304
Proc. SPIE 3999, Dissolution properties of cycloolefin-maleic-anhydride-based resist resins, 0000 (23 June 2000); doi: 10.1117/12.388305
Proc. SPIE 3999, Cycloolefin-maleic anhydride copolymers for 193-nm resist compositions, 0000 (23 June 2000); doi: 10.1117/12.388306
ArF, KrF: LER Studies
Proc. SPIE 3999, Toward controlled resist line-edge roughness: material origin of line-edge roughness in chemically amplified positive-tone resists, 0000 (23 June 2000); doi: 10.1117/12.388307
Proc. SPIE 3999, Effects of process parameters on pattern-edge roughness of chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388308
Proc. SPIE 3999, Lithography and line-edge roughness of high-activation-energy resists, 0000 (23 June 2000); doi: 10.1117/12.388309
Proc. SPIE 3999, Line-edge roughness of chemically amplified resists, 0000 (23 June 2000); doi: 10.1117/12.388310
Proc. SPIE 3999, Using alicyclic polymers in top surface imaging systems to reduce line-edge roughness, 0000 (23 June 2000); doi: 10.1117/12.388311
Poster Session
Proc. SPIE 3999, Amine control for DUV lithography: identifying hidden sources, 0000 (23 June 2000); doi: 10.1117/12.388312
KrF: Processing, Etching, and New Materials
Proc. SPIE 3999, 0.12-um logic process using a 248-nm step-and-scan system, 0000 (23 June 2000); doi: 10.1117/12.388313
Proc. SPIE 3999, Novel resist material for sub-100-nm contact hole pattern, 0000 (23 June 2000); doi: 10.1117/12.388315
Proc. SPIE 3999, Effect of acid labile ether protecting groups on the oxide etch resistance and lithographic performance of 248-nm resists, 0000 (23 June 2000); doi: 10.1117/12.388316
VUV: Materials and Fundamental Studies
Proc. SPIE 3999, Prospects for using existing resists for evaluating 157-nm imaging systems, 0000 (23 June 2000); doi: 10.1117/12.388317
Proc. SPIE 3999, Approach for VUV positive resists using photodecomposable polymers, 0000 (23 June 2000); doi: 10.1117/12.388318
Proc. SPIE 3999, New materials for 157-nm photoresists: characterization and properties, 0000 (23 June 2000); doi: 10.1117/12.388319
Proc. SPIE 3999, Polymers for 157-nm photoresist applications: a progress report, 0000 (23 June 2000); doi: 10.1117/12.388320
Proc. SPIE 3999, Theoretical calculations of photoabsorption of molecules in the vacuum ultraviolet region, 0000 (23 June 2000); doi: 10.1117/12.388321
EUV, X Ray, VUV: Materials and Fundamental Studies
Proc. SPIE 3999, Methods to improve radiation sensitivity of chemically amplified resists by using chain reactions of acid generation, 0000 (23 June 2000); doi: 10.1117/12.388322
Proc. SPIE 3999, Development of analysis system for F2-excimer laser photochemical processes, 0000 (23 June 2000); doi: 10.1117/12.388324
Proc. SPIE 3999, Pattern transfer of sub-100-nm features in polysilicon using a single-layer photoresist and extreme ultraviolet lithography, 0000 (23 June 2000); doi: 10.1117/12.388325
Proc. SPIE 3999, Reaction mechanisms in silicon-based resist materials: polysilanes for deep-UV, EUV, and x-ray lithography, 0000 (23 June 2000); doi: 10.1117/12.388326
Poster Session
Proc. SPIE 3999, Gel layer model for photoresist development, 0000 (23 June 2000); doi: 10.1117/12.388327
Proc. SPIE 3999, Solvent content of thick photoresist films, 0000 (23 June 2000); doi: 10.1117/12.388328
Proc. SPIE 3999, Process characterization of an aqueous developable photosensitive polyimide on a broadband stepper, 0000 (23 June 2000); doi: 10.1117/12.388329
Proc. SPIE 3999, Mechanism-dependent resolution for protein micro/nano-patterning, 0000 (23 June 2000); doi: 10.1117/12.388330
Proc. SPIE 3999, Process characterization of an ultrathick strippable photoresist using a broadband stepper, 0000 (23 June 2000); doi: 10.1117/12.388331
Proc. SPIE 3999, Chemistry of photoresist reclamation III, 0000 (23 June 2000); doi: 10.1117/12.388332
Proc. SPIE 3999, New development of cost-effective sub-0.18-um lithography with i-line, 0000 (23 June 2000); doi: 10.1117/12.388334
Proc. SPIE 3999, Development of an i-line attenuated phase shift process for dual inlay interconnect lithography, 0000 (23 June 2000); doi: 10.1117/12.388335
Proc. SPIE 3999, High-yield resin fractionation using a liquid/liquid centrifuge, 0000 (23 June 2000); doi: 10.1117/12.388336
Proc. SPIE 3999, New bottom antireflection coating approach for KrF lithography at sub-150-nm design rule, 0000 (23 June 2000); doi: 10.1117/12.388337
Proc. SPIE 3999, PHSF-HASN series photothermoresists, 0000 (23 June 2000); doi: 10.1117/12.388338
Proc. SPIE 3999, Positive photosensitive polyimide synthesized by block-copolymerization for KrF lithography, 0000 (23 June 2000); doi: 10.1117/12.388339
Proc. SPIE 3999, Synthesis and lithographic performance of poly-4-hydroxphenyl-ethyl-methacrylate-based negative resists, 0000 (23 June 2000); doi: 10.1117/12.388340
Proc. SPIE 3999, Design and study of aqueous processable positive-tone photoresists, 0000 (23 June 2000); doi: 10.1117/12.388341
Proc. SPIE 3999, Structural design of a new class of acetal polymer for DUV resists, 0000 (23 June 2000); doi: 10.1117/12.388342
Proc. SPIE 3999, Acid amplifiers: proton transfer or direct acid formation, 0000 (23 June 2000); doi: 10.1117/12.388344
Proc. SPIE 3999, Simulation-based formulation of a nonchemically amplified resist for 257-nm laser mask fabrication, 0000 (23 June 2000); doi: 10.1117/12.388345