PROCEEDINGS VOLUME 4000
MICROLITHOGRAPHY 2000 | FEB 27 - MAR 3 2000
Optical Microlithography XIII
MICROLITHOGRAPHY 2000
Feb 27 - Mar 3 2000
Santa Clara, CA, United States
Evaluating Lens Quality
Proc. SPIE 4000, Review of photoresist-based lens evaluation methods, 0000 (5 July 2000); doi: 10.1117/12.388926
Proc. SPIE 4000, Impact of high-order aberrations on the performance of the aberration monitor, 0000 (5 July 2000); doi: 10.1117/12.389010
Proc. SPIE 4000, In-situ measurement of lens aberrations, 0000 (5 July 2000); doi: 10.1117/12.389021
Proc. SPIE 4000, Measurement of lens aberration by using in-situ interferometer and classification of lens for correct application, 0000 (5 July 2000); doi: 10.1117/12.389032
Proc. SPIE 4000, Zernike coefficients: are they really enough?, 0000 (5 July 2000); doi: 10.1117/12.389042
RET Integration with Assist/OPC
Proc. SPIE 4000, Effect of real masks on wafer patterning, 0000 (5 July 2000); doi: 10.1117/12.389052
Proc. SPIE 4000, Lithographic comparison of assist feature design strategies, 0000 (5 July 2000); doi: 10.1117/12.389061
Proc. SPIE 4000, Analytical description of antiscattering and scattering bar assist features, 0000 (5 July 2000); doi: 10.1117/12.389072
Proc. SPIE 4000, OPC methodology and implementation to prototyping of small SRAM cells of 0.18-um node logic gate levels, 0000 (5 July 2000); doi: 10.1117/12.389083
Proc. SPIE 4000, 0.13-um optical lithography for random logic devices using 248-nm attenuated phase-shifting masks, 0000 (5 July 2000); doi: 10.1117/12.388927
Strong PSM Implementation
Proc. SPIE 4000, Alt-PSM for 0.10-um and 0.13-um polypatterning, 0000 (5 July 2000); doi: 10.1117/12.388937
Proc. SPIE 4000, Method of expanding process window for the double exposure technique with alt-PSMs, 0000 (5 July 2000); doi: 10.1117/12.388947
Proc. SPIE 4000, Process capability analysis of DUV alternating PSM and DUV attenuated PSM lithography for 100-nm gate fabrication, 0000 (5 July 2000); doi: 10.1117/12.388957
Proc. SPIE 4000, Phase aware proximity correction for advanced masks, 0000 (5 July 2000); doi: 10.1117/12.388972
CD Control and Masks
Proc. SPIE 4000, Optical lithography into the millennium: sensitivity to aberrations, vibration, and polarization, 0000 (5 July 2000); doi: 10.1117/12.388983
Proc. SPIE 4000, Characterization of linewidth variation, 0000 (5 July 2000); doi: 10.1117/12.388994
Proc. SPIE 4000, KrF lithography for 130 nm, 0000 (5 July 2000); doi: 10.1117/12.389002
Proc. SPIE 4000, Impact of optical enhancement techniques on the mask error enhancement function (MEEF), 0000 (5 July 2000); doi: 10.1117/12.389009
Proc. SPIE 4000, Analytic approach to understanding the impact of mask errors on optical lithography, 0000 (5 July 2000); doi: 10.1117/12.389011
Proc. SPIE 4000, Modeling oblique incidence effects in photomasks, 0000 (5 July 2000); doi: 10.1117/12.389012
Double Exposure and Filters
Proc. SPIE 4000, IDEAL double exposure method for polylevel structures, 0000 (5 July 2000); doi: 10.1117/12.389013
Proc. SPIE 4000, Spatial frequency filtering in the pellicle plane, 0000 (5 July 2000); doi: 10.1117/12.389014
Proc. SPIE 4000, High-density lithography using attenuated phase-shift mask and negative resist, 0000 (5 July 2000); doi: 10.1117/12.389015
Proc. SPIE 4000, Customized illumination aperture filter for low k1 photolithography process, 0000 (5 July 2000); doi: 10.1117/12.389016
Proc. SPIE 4000, Patterning 220-nm pitch DRAM patterns by using double mask exposure, 0000 (5 July 2000); doi: 10.1117/12.389017
Image Quality and Overlay
Proc. SPIE 4000, Understanding lens aberration and influences to lithographic imaging, 0000 (5 July 2000); doi: 10.1117/12.389018
Proc. SPIE 4000, Pattern asymmetry correction using assist patterns, 0000 (5 July 2000); doi: 10.1117/12.389019
Proc. SPIE 4000, Interaction of pattern orientation and lens quality on CD and overlay errors, 0000 (5 July 2000); doi: 10.1117/12.389020
Proc. SPIE 4000, Practical optical-proximity-correction approach by considering interlayer overlap, 0000 (5 July 2000); doi: 10.1117/12.389022
Proc. SPIE 4000, Process performance comparisons on 300-mm i-line steppers, DUV stepper, and DUV scanners, 0000 (5 July 2000); doi: 10.1117/12.389023
Strong PSM Implementation
Proc. SPIE 4000, 0.3-um pitch random interconnect patterning with node connection phase-shifting mask: experiments and simulations, 0000 (5 July 2000); doi: 10.1117/12.389024
Exploring the Limits
Proc. SPIE 4000, Extension of KrF lithography to sub-50-nm pattern formation, 0000 (5 July 2000); doi: 10.1117/12.389025
Proc. SPIE 4000, Phase-mask effects by dark-field lithography, 0000 (5 July 2000); doi: 10.1117/12.389026
Proc. SPIE 4000, Limits of optical lithography, 0000 (5 July 2000); doi: 10.1117/12.389027
Proc. SPIE 4000, Application of chromeless phase-shift masks to sub-100-nm SOI CMOS transistor fabrication, 0000 (5 July 2000); doi: 10.1117/12.389028
193-nm Integration
Proc. SPIE 4000, Integration considerations for 130-nm device patterning using ArF lithography, 0000 (5 July 2000); doi: 10.1117/12.389030
Proc. SPIE 4000, Comparison study for sub-0.13-um lithography between ArF and KrF lithography, 0000 (5 July 2000); doi: 10.1117/12.389031
Proc. SPIE 4000, Feasibility study of an embedded transparent phase-shifting mask in ArF lithography, 0000 (5 July 2000); doi: 10.1117/12.389033
Proc. SPIE 4000, Electrical critical dimension metrology for 100-nm linewidths and below, 0000 (5 July 2000); doi: 10.1117/12.389034
Proc. SPIE 4000, Issues and nonissues on a 193-nm step-and-scan system in production, 0000 (5 July 2000); doi: 10.1117/12.389035
193/157 Issues
Proc. SPIE 4000, Experimentation and modeling of organic photocontamination on lithographic optics, 0000 (5 July 2000); doi: 10.1117/12.389036
Proc. SPIE 4000, Long-term testing of optical components for 157-nm lithography, 0000 (5 July 2000); doi: 10.1117/12.389037
Proc. SPIE 4000, Behavior of fused silica materials for microlithography irradiated at 193 nm with low-fluence ArF radiation for tens of billions of pulses, 0000 (5 July 2000); doi: 10.1117/12.389038
Proc. SPIE 4000, Prospects for long-pulse operation of ArF lasers for 193-nm microlithography, 0000 (5 July 2000); doi: 10.1117/12.389039
Exposure System Advances and Extensions
Proc. SPIE 4000, Overlay performance in advanced processes, 0000 (5 July 2000); doi: 10.1117/12.389040
Proc. SPIE 4000, 193-nm step-and-scan lithography equipment, 0000 (5 July 2000); doi: 10.1117/12.389041
Proc. SPIE 4000, Advances in 193-nm lithography tools, 0000 (5 July 2000); doi: 10.1117/12.389043
Proc. SPIE 4000, Aberration averaging using point spread function for scanning projection systems, 0000 (5 July 2000); doi: 10.1117/12.389044
Proc. SPIE 4000, Realization of very small aberration projection lenses, 0000 (5 July 2000); doi: 10.1117/12.389045
Exploring the Limits
Proc. SPIE 4000, Advanced technology for extending optical lithography, 0000 (5 July 2000); doi: 10.1117/12.389046
Poster Session
Proc. SPIE 4000, Understanding the impact of full-field mask error factor, 0000 (5 July 2000); doi: 10.1117/12.389047
Proc. SPIE 4000, Impact of MEEF on low k1 lithography and mask inspection, 0000 (5 July 2000); doi: 10.1117/12.389048
Proc. SPIE 4000, Mask error factor impact on the 130-nm node, 0000 (5 July 2000); doi: 10.1117/12.389049
Proc. SPIE 4000, Characterization of spatial CD variability, spatial mask-level correction, and improvement of circuit performance, 0000 (5 July 2000); doi: 10.1117/12.389050
Proc. SPIE 4000, Validation of repair process for DUV attenuated phase-shift mask, 0000 (5 July 2000); doi: 10.1117/12.389051
Proc. SPIE 4000, Predictive and corrective model for bulk heating distortion in photomasks, 0000 (5 July 2000); doi: 10.1117/12.389053