PROCEEDINGS VOLUME 4066
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY VII | 12-13 APRIL 2000
Photomask and Next-Generation Lithography Mask Technology VII
PHOTOMASK AND NEXT GENERATION LITHOGRAPHY MASK TECHNOLOGY VII
12-13 April 2000
Kanagawa, Japan
Lithography Performance Evaluation and MEF Analysis
Proc. SPIE 4066, Requirements for lithography and mask technology from the standpoint of system LSI business, 0000 (19 July 2000); doi: 10.1117/12.392024
Proc. SPIE 4066, Comparative study on MEEF and dose latitude between attenuated PSM and Cr binary masks, 0000 (19 July 2000); doi: 10.1117/12.392034
Proc. SPIE 4066, Impact of MEF on 0.15-um KrF lithography, 0000 (19 July 2000); doi: 10.1117/12.392042
Proc. SPIE 4066, Novel methodology for 130-nm DRAM cell mask size optimization, 0000 (19 July 2000); doi: 10.1117/12.392052
Mask Strategy
Proc. SPIE 4066, Analysis of reticle deformation, reduction ratio, and MEEF of future optical lithography, 0000 (19 July 2000); doi: 10.1117/12.392069
Proc. SPIE 4066, Mask cost of ownership for advanced lithography, 0000 (19 July 2000); doi: 10.1117/12.392078
Proc. SPIE 4066, Cluster tool solution for fabrication and qualification of advanced photomasks, 0000 (19 July 2000); doi: 10.1117/12.392088
Masks for NGL: X-Ray, E-Beam, and EUV
Proc. SPIE 4066, Current status of NGL masks, 0000 (19 July 2000); doi: 10.1117/12.392098
Proc. SPIE 4066, EUV mask absorber characterization and selection, 0000 (19 July 2000); doi: 10.1117/12.392025
Photomask Processes and Materials
Proc. SPIE 4066, CA resist with high sensitivity and sub-100-nm resolution for advanced mask making, 0000 (19 July 2000); doi: 10.1117/12.392026
Proc. SPIE 4066, Magnetic neutral loop discharge etching for 130-nm generation photomask fabrication, 0000 (19 July 2000); doi: 10.1117/12.392027
Proc. SPIE 4066, Applications of MICP source for next-generation photomask process, 0000 (19 July 2000); doi: 10.1117/12.392028
Quality Assurance and Defect Reduction for Advanced Mask Process
Proc. SPIE 4066, Quality assurance and yield improvement in photomask fabrication, 0000 (19 July 2000); doi: 10.1117/12.392029
Proc. SPIE 4066, Development of photomask process with precise CD control, and an approach for DFM (defect-free manufacturing) using a cluster tool, 0000 (19 July 2000); doi: 10.1117/12.392030
Proc. SPIE 4066, Fabrication process of alternating phase-shift mask for practical use, 0000 (19 July 2000); doi: 10.1117/12.392031
Proc. SPIE 4066, Universal inspection standard for evaluation of inspection system and algorithm sensitivity and runability, 0000 (19 July 2000); doi: 10.1117/12.392032
Proc. SPIE 4066, Investigation of fast and accurate reticle defect assessment methods using STARlight for chrome-on-glass reticle defects, 0000 (19 July 2000); doi: 10.1117/12.392033
Proc. SPIE 4066, In-line verification of linewidth uniformity for 0.18 and below: design rule reticles, 0000 (19 July 2000); doi: 10.1117/12.392035
Proc. SPIE 4066, Pattern shape analysis tool for defect judgement of photomask, 0000 (19 July 2000); doi: 10.1117/12.392036
Proc. SPIE 4066, Reticle defect sizing of optical proximity correction defects using SEM imaging and image analysis techniques, 0000 (19 July 2000); doi: 10.1117/12.392037
Proc. SPIE 4066, Evaluation of printability and inspection of phase defects on hidden-shifter alternating phase-shift masks, 0000 (19 July 2000); doi: 10.1117/12.392038
Proc. SPIE 4066, Improvement of defect density for DUV halftone PSM, 0000 (19 July 2000); doi: 10.1117/12.392039
Proc. SPIE 4066, Practical phase control technique for alternating phase-shift mask fabrication, 0000 (19 July 2000); doi: 10.1117/12.392040
Proc. SPIE 4066, Improving reticle quality through reticle blank inspection, 0000 (19 July 2000); doi: 10.1117/12.392041
Proc. SPIE 4066, Knack for reticle cleaning, 0000 (19 July 2000); doi: 10.1117/12.392043
Proc. SPIE 4066, ArF halftone PSM cleaning process optimization for next-generation lithography, 0000 (19 July 2000); doi: 10.1117/12.392044
Proc. SPIE 4066, Mask cleaner innovation, 0000 (19 July 2000); doi: 10.1117/12.392045
Proc. SPIE 4066, Surface preparation of EUVL mask substrate for multilayer coating by supersonic hydrocleaning technique, 0000 (19 July 2000); doi: 10.1117/12.392046
Lithography Performance Evaluation and MEF Analysis
Proc. SPIE 4066, Mask critical dimension error on optical lithography, 0000 (19 July 2000); doi: 10.1117/12.392047
Mask Strategy
Proc. SPIE 4066, Another look at stepper lens reduction and field size, 0000 (19 July 2000); doi: 10.1117/12.392048
Masks for NGL: X-Ray, E-Beam, and EUV
Proc. SPIE 4066, Next-generation lithography mask development at the NGL-MCOC, 0000 (19 July 2000); doi: 10.1117/12.392049
Proc. SPIE 4066, Process scheme for removing buffer layer on multilayer for EUVL mask, 0000 (19 July 2000); doi: 10.1117/12.392050
Proc. SPIE 4066, Critical defects in x-ray masks for 100-nm patterns, 0000 (19 July 2000); doi: 10.1117/12.392051
Proc. SPIE 4066, Graphite membrane applied for high-aspect-ratio microstructure fabrication, 0000 (19 July 2000); doi: 10.1117/12.392053
Photomask Processes and Materials
Proc. SPIE 4066, Lithography performance of contact holes: I. Optimization of pattern fidelity using MPG and MPG-II, 0000 (19 July 2000); doi: 10.1117/12.392054
Proc. SPIE 4066, Lithography performance of contact holes: II. Simulation of the effects of reticle corner rounding on wafer print performance, 0000 (19 July 2000); doi: 10.1117/12.392055
Proc. SPIE 4066, Proximity effect correction for reticle fabrication, 0000 (19 July 2000); doi: 10.1117/12.392056
Proc. SPIE 4066, Fogging effect compensation technique for photomask making, 0000 (19 July 2000); doi: 10.1117/12.392057
Proc. SPIE 4066, Dose latitude dependency on resist contrast in e-beam mask lithography, 0000 (19 July 2000); doi: 10.1117/12.392058
Proc. SPIE 4066, Improvement of Cr dry etching characteristics with the MERIE system, 0000 (19 July 2000); doi: 10.1117/12.392059
Proc. SPIE 4066, Evaluation of loading effect of NLD dry etching, 0000 (19 July 2000); doi: 10.1117/12.392060
Proc. SPIE 4066, 150-nm mask fabrication using thin ZEP 7000 resist, GHOST, and dry etch for the MEBES 5000 pattern generator, 0000 (19 July 2000); doi: 10.1117/12.392061
Proc. SPIE 4066, Spray developer for ZEP 7000, 0000 (19 July 2000); doi: 10.1117/12.392062
Proc. SPIE 4066, Improvement of ZEP process for advanced mask fabrication, 0000 (19 July 2000); doi: 10.1117/12.392063
Proc. SPIE 4066, CAR blanks feasibility study results, 0000 (19 July 2000); doi: 10.1117/12.392064
Proc. SPIE 4066, Improvement of the resolution and accuracy of chemical-amplification positive resist for 0.13-um reticle fabrication, 0000 (19 July 2000); doi: 10.1117/12.392065
Proc. SPIE 4066, High-contrast i-line positive photoresist for laser reticle writer, 0000 (19 July 2000); doi: 10.1117/12.392066
Proc. SPIE 4066, Pellicle degradation and its effect on surrounding environment in ArF lithography, 0000 (19 July 2000); doi: 10.1117/12.392067
Inspection and Repair
Proc. SPIE 4066, Structural and thickness distribution evaluation of a multilayer photomask blank with x-ray reflectivity method, 0000 (19 July 2000); doi: 10.1117/12.392068
Proc. SPIE 4066, Halftone PSM inspection sensitivity of OPC line/space pattern for 150-nm generation, 0000 (19 July 2000); doi: 10.1117/12.392070
Proc. SPIE 4066, Impact of pattern proximity correction on die-to-database mask inspection, 0000 (19 July 2000); doi: 10.1117/12.392071
Proc. SPIE 4066, 150-nm DR contact holes die-to-database inspection, 0000 (19 July 2000); doi: 10.1117/12.392072
Proc. SPIE 4066, New approach to mask and wafer performance optimization for system-on-a-chip (SOC) devices, 0000 (19 July 2000); doi: 10.1117/12.392073
Proc. SPIE 4066, Characteristics of CD measurement equipment, 0000 (19 July 2000); doi: 10.1117/12.392074
Proc. SPIE 4066, End of thresholds: subwavelength optical linewidth measurement using the flux-area technique, 0000 (19 July 2000); doi: 10.1117/12.392075
Advanced Patterning Tools
Proc. SPIE 4066, Optical column of the mask-scan EB mask writer test stand, 0000 (19 July 2000); doi: 10.1117/12.392076
Proc. SPIE 4066, New-concept i-line stepper for mask fabrication, 0000 (19 July 2000); doi: 10.1117/12.392077