PROCEEDINGS VOLUME 4078
PHOTONICS TAIWAN | 26-28 JULY 2000
Optoelectronic Materials and Devices II
PHOTONICS TAIWAN
26-28 July 2000
Taipei, Taiwan
GaN LED and Materials I
Proc. SPIE 4078, Radiative recombination mechanisms in InGaN/AlGaN single-quantum-well LED revealed by time-resolved photoluminescence spectra under external electric fields, 0000 (11 July 2000); doi: 10.1117/12.392133
GaN LED and Materials II
Proc. SPIE 4078, Optical quality of InGaAsN/GaAs, 0000 (11 July 2000); doi: 10.1117/12.392143
Proc. SPIE 4078, Optical pumping spectra for InxGa1-xN/GaN multiple-quantum-well structures with indium content x>0.35, 0000 (11 July 2000); doi: 10.1117/12.392168
Proc. SPIE 4078, Dielectric function of GaN: model calculations, 0000 (11 July 2000); doi: 10.1117/12.392178
GaN LED and Materials III
Proc. SPIE 4078, Effect of indium surfactant on the optical and structural properties of MBE-grown GaN, 0000 (11 July 2000); doi: 10.1117/12.392186
Proc. SPIE 4078, Effect of pre-treatment of GaN substrate for homoepitaxial growth by rf MBE, 0000 (11 July 2000); doi: 10.1117/12.392111
Proc. SPIE 4078, Effects of gamma-ray irradiation on the microstructural and luminescent properties of radio-frequency magnetron-sputtered GaN thin films, 0000 (11 July 2000); doi: 10.1117/12.392117
Proc. SPIE 4078, Etch of gallium nitride and other III-IV materials using a novel high-density plasma configuration, 0000 (11 July 2000); doi: 10.1117/12.392123
Quantum Dots: Growth, Devices, and Applications
Proc. SPIE 4078, Quantum dot carrier dynamics and far-infrared devices, 0000 (11 July 2000); doi: 10.1117/12.392128
Proc. SPIE 4078, Temperature dependence of quantum dot lasers, 0000 (11 July 2000); doi: 10.1117/12.392129
Proc. SPIE 4078, Observation of self-assembled InAs/GaAs quantum dot structure with temperature-dependent photoluminescence and measurement of electrical characteristics, 0000 (11 July 2000); doi: 10.1117/12.392131
Proc. SPIE 4078, One-dimensional arrays of self-assembled InAs/InP quantum dots, 0000 (11 July 2000); doi: 10.1117/12.392132
Quantum Well Intermixing and Lasers
Proc. SPIE 4078, Material growth investigation and high performance of InGaAs/InGaAsP/AlGaAs quantum well diode lasers (lamda=0.98 um), 0000 (11 July 2000); doi: 10.1117/12.392134
Proc. SPIE 4078, Low-threshold current densities of 1.5-um wavelength (110) GaInAs(P) QW lasers along [001] direction, 0000 (11 July 2000); doi: 10.1117/12.392136
Semiconductor LEDs and Lasers
Proc. SPIE 4078, New methods of defect-enhanced quantum well intermixing and demonstrated integrated distributed-feedback laser modulator, 0000 (11 July 2000); doi: 10.1117/12.392137
Proc. SPIE 4078, Characteristics of oxide-confined AlGaAs/GaAs resonant-cavity light-emitting diodes, 0000 (11 July 2000); doi: 10.1117/12.392138
Proc. SPIE 4078, High efficiency tunneling-regenerated multi-active region light-emitting diodes, 0000 (11 July 2000); doi: 10.1117/12.392139
Epitaxial Growth
Proc. SPIE 4078, Phase calculation of (100) oriented InGaAsP grown with liquid phase epitaxy, 0000 (11 July 2000); doi: 10.1117/12.392140
Proc. SPIE 4078, New concept technology: pressure-variation liquid phase epitaxy, 0000 (11 July 2000); doi: 10.1117/12.392141
Proc. SPIE 4078, Infrared reflectance study of chemical-vapor-deposition-grown 3C-silicon carbide on silicon substrate, 0000 (11 July 2000); doi: 10.1117/12.392142
Proc. SPIE 4078, Optical characterization of low-temperature GaAs, 0000 (11 July 2000); doi: 10.1117/12.392144
Integrated Optical Components and Devices
Proc. SPIE 4078, Semiconductor photonic integration: a regrowth free approach, 0000 (11 July 2000); doi: 10.1117/12.392145
Proc. SPIE 4078, Design of wideband dispersion compensating optical fiber device based on higher-order LP11 mode, 0000 (11 July 2000); doi: 10.1117/12.392146
Proc. SPIE 4078, Integrated magneto-optic waveguide material structures and devices, 0000 (11 July 2000); doi: 10.1117/12.392147
Proc. SPIE 4078, Light propagation characteristics of microsphere array, 0000 (11 July 2000); doi: 10.1117/12.392148
Proc. SPIE 4078, Preferential input and output coupling of oval-shaped optical microcavities: fluorescence emission from oval-shaped dye-doped glass fibers, 0000 (11 July 2000); doi: 10.1117/12.392149
Proc. SPIE 4078, Novel three-branch optical power divider by Ti diffusion on lithium niobate, 0000 (11 July 2000); doi: 10.1117/12.392150
Organic Light-Emitting Devices
Proc. SPIE 4078, Temperature- and field-dependent quantum efficiency in tris-(8-hydroxy) quinoline aluminum organic light-emitting diode, 0000 (11 July 2000); doi: 10.1117/12.392151
Proc. SPIE 4078, Origin of the blue emission from poly(1-phenyl-2-alkynes) and poly(phenylacetylenes), 0000 (11 July 2000); doi: 10.1117/12.392152
Proc. SPIE 4078, New multichamber evaporator for organic devices, 0000 (11 July 2000); doi: 10.1117/12.392153
Proc. SPIE 4078, Novel material for blue organic light-emitting diode, 0000 (11 July 2000); doi: 10.1117/12.392154
Advanced Optical Devices
Proc. SPIE 4078, Picosecond imaging of hot electron emission from CMOS circuitry, 0000 (11 July 2000); doi: 10.1117/12.392155
Proc. SPIE 4078, Photonic components fabricated using ion implantation, 0000 (11 July 2000); doi: 10.1117/12.392156
Proc. SPIE 4078, Integration of waveguide-type wavelength demultiplexing photodetectors by selective intermixing of InGaAs/InGaAsP quantum well structure, 0000 (11 July 2000); doi: 10.1117/12.392157
Proc. SPIE 4078, Concentration effect of spectroscopic properties of Yb3+-doped borate glasses, 0000 (11 July 2000); doi: 10.1117/12.392158
Poster Session
Proc. SPIE 4078, Theoretical study on coupling effects of modulation depth between two photorefractive phase gratings with an external applied field, 0000 (11 July 2000); doi: 10.1117/12.392159
Proc. SPIE 4078, Performance improvement in XGM wavelength conversion exploiting SLAOLM, 0000 (11 July 2000); doi: 10.1117/12.392160
Proc. SPIE 4078, SPICE circuit models for semiconductor lasers with effects of carrier and lattice heating, 0000 (11 July 2000); doi: 10.1117/12.392161
Proc. SPIE 4078, HF signal measurement device for DVD disk, 0000 (11 July 2000); doi: 10.1117/12.392162
Proc. SPIE 4078, Design of two-dimensional 1X16 and 1X32 array waveguide optical power splitters, 0000 (11 July 2000); doi: 10.1117/12.392163
Proc. SPIE 4078, Shrinkage of spacing in fabricating sol-gel optical elements, 0000 (11 July 2000); doi: 10.1117/12.392164
Proc. SPIE 4078, Design of wavelength-selective directional coupler made of W-index waveguide for WDM, 0000 (11 July 2000); doi: 10.1117/12.392165
Proc. SPIE 4078, Analysis of MMI characteristics with periodic air pads on SOI waveguide-based optical interconnects, 0000 (11 July 2000); doi: 10.1117/12.392166
Proc. SPIE 4078, Analysis of the optimal light launching position of SOI tapered waveguides, 0000 (11 July 2000); doi: 10.1117/12.392167
Proc. SPIE 4078, Experimental study of the temperature effect on the polarization state of MQW semiconductor optical amplifier, 0000 (11 July 2000); doi: 10.1117/12.392169
Proc. SPIE 4078, Fermi-level pinning of GaAs at room temperature directly determined by the amplitude of photoreflectance spectra, 0000 (11 July 2000); doi: 10.1117/12.392170
Proc. SPIE 4078, Analysis of a novel polarization analyzer, 0000 (11 July 2000); doi: 10.1117/12.392171
Proc. SPIE 4078, Characterizations of Zn-diffused lithium niobate directional coupler by post thermal treatment, 0000 (11 July 2000); doi: 10.1117/12.392172
Proc. SPIE 4078, Improved interferometric method for determination of the mechanical properties of metal oxide films, 0000 (11 July 2000); doi: 10.1117/12.392173
Proc. SPIE 4078, Fabrications and characterizations of micromachined Fabry-Perot interferometers, 0000 (11 July 2000); doi: 10.1117/12.392174
Proc. SPIE 4078, 256 x 256 InSb focal plane arrays, 0000 (11 July 2000); doi: 10.1117/12.392175
Proc. SPIE 4078, Cosputtering effect in titanium oxides by ion-beam sputtering deposition, 0000 (11 July 2000); doi: 10.1117/12.392176
Proc. SPIE 4078, Raman and hot electron-neutral acceptor luminescence studies of electron-optical phonon interactions in GaAs/A1xGa1-xAs quantum wells, 0000 (11 July 2000); doi: 10.1117/12.392177
Proc. SPIE 4078, High-growth rate epitaxy of InN film by a novel-design MOCVD, 0000 (11 July 2000); doi: 10.1117/12.392179
Proc. SPIE 4078, Performance and reliability of wafer-bonded AlGaInP/mirror/Si light-emitting diodes, 0000 (11 July 2000); doi: 10.1117/12.392180
Proc. SPIE 4078, Built-in electric field investigation on InAs and InGaAs nanostructures by photoreflectance, 0000 (11 July 2000); doi: 10.1117/12.392181