PROCEEDINGS VOLUME 4086
4TH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS | 8-11 MAY 2000
Fourth International Conference on Thin Film Physics and Applications
IN THIS VOLUME

0 Sessions, 205 Papers, 0 Presentations
General  (5)
Metal Films  (14)
Optics Films  (5)
4TH INTERNATIONAL CONFERENCE ON THIN FILM PHYSICS AND APPLICATIONS
8-11 May 2000
Shanghai, China
General
Proc. SPIE 4086, Optical properties of some organic and inorganic thin films in abnormal dispersion region and their applications, 0000 (29 November 2000); doi: 10.1117/12.408287
Proc. SPIE 4086, Characterization of thin films by surface mass spectrometry, 0000 (29 November 2000); doi: 10.1117/12.408398
Proc. SPIE 4086, Refractive index measurement for planar photonic crystal using a microscopy-spectrometry method, 0000 (29 November 2000); doi: 10.1117/12.408415
Proc. SPIE 4086, Characterization of optical storage media films by time-of-flight-energy elastic recoil detection analysis, 0000 (29 November 2000); doi: 10.1117/12.408426
Proc. SPIE 4086, Kinetic scaling of fractal growth of thin films, 0000 (29 November 2000); doi: 10.1117/12.408437
Semiconductor Films
Proc. SPIE 4086, Optical and electrical properties of type III HgTe/Hg1-xCdxTe heterostructures, 0000 (29 November 2000); doi: 10.1117/12.408448
Proc. SPIE 4086, Excitons in InSb quantum wells: a multiuse tool, 0000 (29 November 2000); doi: 10.1117/12.408459
Proc. SPIE 4086, Optically detected magnetic resonance of semiconductor thin films and layered structures, 0000 (29 November 2000); doi: 10.1117/12.408470
Proc. SPIE 4086, Infrared applications of quantum well structures, 0000 (29 November 2000); doi: 10.1117/12.408481
Proc. SPIE 4086, Spontaneous and stimulated emission in ZnCdSe/ZnSe asymmetrical double quantum wells, 0000 (29 November 2000); doi: 10.1117/12.408288
Proc. SPIE 4086, Magneto-optical properties of diluted magnetic semiconductor nanostructures, 0000 (29 November 2000); doi: 10.1117/12.408299
Proc. SPIE 4086, Deposition of GaN Films on (111)GaAs substrates, 0000 (29 November 2000); doi: 10.1117/12.408310
Proc. SPIE 4086, Influence of oxygen incorporation on beryllium- and silicon-doped InP grown by solid source molecular beam epitaxy, 0000 (29 November 2000); doi: 10.1117/12.408321
Proc. SPIE 4086, Thickness and composition determination of MBE-grown strained multiple quantum well structures by x-ray diffraction, 0000 (29 November 2000); doi: 10.1117/12.408332
Proc. SPIE 4086, Electronic and structural properties of InN thin films grown by MOMBE on sapphire substrates, 0000 (29 November 2000); doi: 10.1117/12.408343
Proc. SPIE 4086, P-type polycrystalline Si films prepared by aluminum-induced crystallization, 0000 (29 November 2000); doi: 10.1117/12.408354
Proc. SPIE 4086, Electrodeposition of CuInSe2 thin films for their use in photoelectrochemical solar cells, 0000 (29 November 2000); doi: 10.1117/12.408365
Proc. SPIE 4086, LPE-grown high-quality InGaAsP/GaAs semiconductor lasers, 0000 (29 November 2000); doi: 10.1117/12.408376
Proc. SPIE 4086, Comparison of surface morphologies of HgCdTe films grown by MBE and LPE, 0000 (29 November 2000); doi: 10.1117/12.408387
Proc. SPIE 4086, Properties of gallium phosphide films prepared by rf magnetron sputtering, 0000 (29 November 2000); doi: 10.1117/12.408399
Proc. SPIE 4086, Strains in Si substrate induced by formation of Ge islands, 0000 (29 November 2000); doi: 10.1117/12.408406
Proc. SPIE 4086, Si growth on the Si(III)-B surface phase depending on the type of surface phase formation and initial boron coverage, 0000 (29 November 2000); doi: 10.1117/12.408407
Proc. SPIE 4086, Surface texturing of crystalline silicon and effective area measurement, 0000 (29 November 2000); doi: 10.1117/12.408408
Proc. SPIE 4086, Dislocation evaluation of GaN etched by photoenhanced KOH solution by atomic force microscopy, 0000 (29 November 2000); doi: 10.1117/12.408409
Proc. SPIE 4086, Core structures of the edge dislocations in GaN epilayers, 0000 (29 November 2000); doi: 10.1117/12.408410
Proc. SPIE 4086, Novel Si homojunction far-infrared detectors, 0000 (29 November 2000); doi: 10.1117/12.408411
Proc. SPIE 4086, High-power single quantum well array semiconductor lasers, 0000 (29 November 2000); doi: 10.1117/12.408412
Proc. SPIE 4086, Co-diffusion thin layer of phosphorus and boron for preparation of silicon BSF solar cell, 0000 (29 November 2000); doi: 10.1117/12.408413
Proc. SPIE 4086, Properties of the film electroluminescence of ZnS:TbF3, 0000 (29 November 2000); doi: 10.1117/12.408414
Proc. SPIE 4086, Tunable MQW-DBR lasers using selective area growth, 0000 (29 November 2000); doi: 10.1117/12.408416
Proc. SPIE 4086, Planar photonic device using surface thin film stressors, 0000 (29 November 2000); doi: 10.1117/12.408417
Proc. SPIE 4086, Wavelength tuning of GaAs/AlGaAs quantum well infrared photodetectors by rapid thermal annealing and proton implantation, 0000 (29 November 2000); doi: 10.1117/12.408418
Proc. SPIE 4086, RFTIR measurement on backside-thinned detector film of InSb infrared focal plane arrays, 0000 (29 November 2000); doi: 10.1117/12.408419
Proc. SPIE 4086, Recent studies on ZnTe homoepitaxial films deposited by synchrotron-radiation-excited growth, 0000 (29 November 2000); doi: 10.1117/12.408420
Proc. SPIE 4086, Properties of betaFeSi2 by first principles calculations, 0000 (29 November 2000); doi: 10.1117/12.408421
Proc. SPIE 4086, Poisson's ratio of AIAs, 0000 (29 November 2000); doi: 10.1117/12.408422
Proc. SPIE 4086, Mechanism of formation and photoluminescence of Si quantum dots embedded in amorphous SiO2 matrix, 0000 (29 November 2000); doi: 10.1117/12.408423
Proc. SPIE 4086, Influence of Cd diffusion on the structure and photoluminescence of CdSe/ZnSe multiple quantum wells, 0000 (29 November 2000); doi: 10.1117/12.408424
Proc. SPIE 4086, Infrared photoluminescence characterization of HgCdTe film, 0000 (29 November 2000); doi: 10.1117/12.408425
Proc. SPIE 4086, Enhance action by introducing cesium on surface inversion layer of P-silicon, 0000 (29 November 2000); doi: 10.1117/12.408427
Proc. SPIE 4086, Optical and electronic characteristics for of thin film, 0000 (29 November 2000); doi: 10.1117/12.408428
Proc. SPIE 4086, Scanning photoluminescence microscopy on GaAs/AlGaAs single quantum wire at room temperature, 0000 (29 November 2000); doi: 10.1117/12.408429
Proc. SPIE 4086, Numerical simulation of continuous Nd:YAG laser annealing of InP, 0000 (29 November 2000); doi: 10.1117/12.408430
Proc. SPIE 4086, Magneto-optical studies of ZnSe/Zn1-xMnxSe quantum wires, 0000 (29 November 2000); doi: 10.1117/12.408431
Proc. SPIE 4086, Characteristics of reactive ion etching of indium nitride, 0000 (29 November 2000); doi: 10.1117/12.408432
Proc. SPIE 4086, Composition and structure of CdTe thin films, 0000 (29 November 2000); doi: 10.1117/12.408433
Proc. SPIE 4086, Influence of annealing conditions on the chemical states of InP/SiO2 nanocomposite films deposited by rf magnetron co-sputtering, 0000 (29 November 2000); doi: 10.1117/12.408434
Proc. SPIE 4086, Preparation of CuInSe2 film with electrodeposition, 0000 (29 November 2000); doi: 10.1117/12.408435
Proc. SPIE 4086, Preparation and characterization of silicon carbide thin films synthesized by rf reactive sputtering, 0000 (29 November 2000); doi: 10.1117/12.408436
Proc. SPIE 4086, Erbium-induced reconstructions on silicon (100) substrate, 0000 (29 November 2000); doi: 10.1117/12.408438
Proc. SPIE 4086, Silicon solar cells with Shottky barrier based on metal films with different crystal state, 0000 (29 November 2000); doi: 10.1117/12.408439
Proc. SPIE 4086, High-power InGaAsP/GaAs SCH SQW lasers, 0000 (29 November 2000); doi: 10.1117/12.408440
Proc. SPIE 4086, Development of SiGe/Si film heterojunction bipolar transistors, 0000 (29 November 2000); doi: 10.1117/12.408441
Proc. SPIE 4086, Characteristics of CdSe thin film transistor, 0000 (29 November 2000); doi: 10.1117/12.408442
Proc. SPIE 4086, Single-mode lasing of InGaAs/InGaAsP MQWs microdisk lasers with low threshold, 0000 (29 November 2000); doi: 10.1117/12.408443
Proc. SPIE 4086, Growth of n-type ZnTe films and formation of ohmic contacts, 0000 (29 November 2000); doi: 10.1117/12.408444
Proc. SPIE 4086, Degradation of Isc and the pattern of degradation of a-Si:H, 0000 (29 November 2000); doi: 10.1117/12.408445
Proc. SPIE 4086, Light ray theory of semiconductor microdisk lasers, 0000 (29 November 2000); doi: 10.1117/12.408446